TEW JAPAN Search Results

Contextual Info: M M S-10& -01-P -S H SPECIFICATIONS Materials: _ H I-TEW If* U Insulator Material: Black Liquid Crystal Polymer Contact Material: Phosphor Bronze Operating Temp Range: -65 C to +12 5 C wiih Gold -6 5 'C to +105 C with Tin Plating: So or Au over 50|i“ 1,27pm Ni

5100 B3 transmitter

Abstract: trx 434 TDA5100 B2 tda 5100 B3 tdk 5100 B3 TDA5100 b3 5100 b2 TRX 434 RF TRANSMITTER 5100-b2 TRX 434 transmitter
Contextual Info: Wireless Control Documentation & Development Tooling Overview Copyright 2010 Infineon Technologies AG. All rights reserved. October 2010 Purpose of this Document: This document gives a comprehensive overview about all available documentation and development tooling

200a1

Contextual Info: O K I Semiconductor_ MTC825121 6 - X X 0 A 1 _ SRAM CARD DESCRIPTION The MTC8251216-150A1 and MTC8251216-200A1 are 512K bytes SRAM cards in conformity with the IC memory card guideline Ver.4 of the Japan Electronic Industry Development

200a1

Contextual Info: O K I Semiconductor_ MTC821281 6-X X 0A 1_ SRAM CARO DESCRIPTION The MTC8212816-150A1 and MTC8212816-200A1 are 128K bytes SRAM cards in conformity with the IC memory card guideline Ver.4 of the Japan Electronic Industry Development Association, Inc. PCMCIA

Contextual Info: CHEZ Semiœnductor M T C 821M 216 -1 8 0 0 1 SRAM CARD DESCRIPTIO N The MTC821M216-150G1 is 1.25M bytes SRAM card in conformity with the IC memory card guideline Ver.4 of the Japan Electronic Industry Development Association, Inc. PCMCIA FEATURES 85.6 (Length) x 54.0 (Width) x 3.3 (Thickness) [mm]

Contextual Info: O K I Semiconductor MTC821M51 6 -X X 0 A 1 SRAM CARD DESCRIPTION The MTC821M516-150A1 and MTC821M516-200A1 are 1.5M bytes SRAM cards in conformity with the IC memory card guideline Ver.4 of the Japan Electronic Industry Development Association, Inc. PCMCIA

Contextual Info: Q m Semiconductor_ MTC822 S 716 - 150B1_ \ SRAM CARO DESCRIPTION The MTC8225716-150B1 is 256K bytes SRAM card in conformity with the IC memory card guideline Ver.4 of the Japan Electronic Industry Development Association, Inc. PCMCIA FEATURES

mtc62

Contextual Info: Semiconductor MTC8251316-150G1 SRAM CARD DESCRIPTION The MTC8251316-150G1 is 512K bytes SRAM card in conformity with the IC memory card guideline Ver.4 of the Japan Electronic Industry Development Association, Inc. PCMCIA FEATURES 85.6 (Length) x 54.0 (Width) x 3.3 (Thickness) [mm]

Contextual Info: O K I Semiconductor MTC8201 Ml 6 - 150 B 1 SRAM CARD DESCRIPTION The MTC8201M16-150B1 is 1M bytes SRAM card in conformity with the IC memory card guideline Ver.4 of the Japan Electronic Industry Development Association, Inc. PCMCIA FEATURES 85.6 (Length) x 54.0 (Width) x 3.3 (Thickness) [mm]

FF20H

Abstract: MTCM PVDX
Contextual Info: O K I Semiconductor MTC8825616-250x2 FLASH MEMORY CARD DESCRIPTION The MTC8625616-250A2, MTC8625616-250B2 and MTC8625616-250C2 are 256Kbytes flash memory cards in conformity with the IC memory card guideline Ver. 4 of the Japan Electronic Industry Development Association, Inc.

KSS Crystals

Abstract: KSS 12Mhz crystal oscillator kss japan tcxo TCXO KSS 12,000 MHz Crystal oscillator VXE4-1055-12M000 12Mhz crystal oscillator KSS oscillator 60x35 CX-4025S
Contextual Info: 1.0 National Semiconductor Application Note, Confidential April 2005 Revision 0.3 LMX9820A TM The National Semiconductor LMX9820A Bluetooth Serial Port module is the next generation of the current LMX9820 and is pin-to-pin compatible. The LMX9820A includes some key changes that must be considered in the

Contextual Info: O K I Semiconductor M TC 8225716-xxOB1 Static RAM GENERAL DESCRIPTION TheMTC8225716-150Bl and MTC8225716-200B1 are 256Kbytes static RAM cards in conformity with the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.

CAT35C804A

Contextual Info: Preliminary CAT35C804A Preliminary CAT35C804A 4K-Bit Secure Access Serial E2PROM FEATURES • Single 5V Supply ■ Commercial and Industrial Temperature Ranges ■ Password READ/WRITE Protection: 1 to 8 Bytes ■ I/O Speed: 9600 Baud –Clock Frequency: 4.9152 MHz Xtal

Memory Organization

Abstract: CAT33C804A
Contextual Info: Preliminary CAT33C804A Preliminary CAT33C804A 4K-Bit Secure Access Serial E2PROM FEATURES • Single 3V Supply ■ Commercial and Industrial Temperature Ranges ■ Password READ/WRITE Protection: 1 to 8 Bytes ■ 100,000 Program/Erase Cycles ■ Memory Pointer WRITE Protection

CVS22

Abstract: I200A
Contextual Info: SHARP SPEC No. E L 0 7 Y 0 8 5 ISSU E: Dec. 01 1995 To ; - REFERENCE SPECIFICATIONS Product Type 64k SRAM L H 5 1 64ASHN Kodel No. LH516AS8 JKThis specifications contains 2 0 pages including the cover and appendix. If you have any objections, please contact us before issuing purchasing order.

93C46W

Abstract: 93C46L
Contextual Info: CAT93C46 1 Kb Microwire Serial EEPROM Description The CAT93C46 is a 1 Kb Serial EEPROM memory device which is configured as either 64 registers of 16 bits ORG pin at VCC or 128 registers of 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the DI (or DO) pin. The CAT93C46 features a

7427 pin configuration

Contextual Info: O K I Semiconductor MTC821M216-xxOBI Static R A M GENERAL DESCRIPTION The MTC821M216-150B1 and MTC821M216-200B1 are 1.25M bytes static RAM cards in confor­ mity with the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.

CAT93C86

Abstract: 93C86S
Contextual Info: CAT93C86 CAT93C86 16K-Bit Serial E2PROM FEATURES • High Speed Operation: 3MHz ■ Fast Nonvolatile Write Cycle: 5ms Max ■ Low Power CMOS Technology ■ Hardware and Software Write Protection ■ 1.8 to 6.0Volt Operation ■ 1024 x 16 or 2048 x 8 Selectable Serial Memory

TEW JAPAN

Contextual Info: rilk Stewar : onn^cio The Category 5 W ideB and* Plug Cat 5 P l u g s , 3 7 Series M ade for Cat 5, Fit for G ig ab it for the dem an ds of ultrahigh bandw idth applications. Surpassing Category 5 1000 Mbps and Beyond D esigned to provide exceptional pe rfo rm an ce in

MTC62

Abstract: MTC821
Contextual Info: O K I Semiconductor MTC821M516-xxOBI Static RAM G E N E R A L DESCRIPTION The MTC821M51éi-150Bl and MTC821M516-200B1 are 1.5M bytes static RAM cards in confor­ mity with the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.

static ram 512K

Contextual Info: O K I Semiconductor M T C 8 2 5 1 3 1 6 -xxO BI Static RAM GENERAL DESCRIPTION The MTC8251316-150B1 and MTC8251316-200B1 are 512Kbytes static RAM cards in conformity w ith the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.

93C56 catalyst

Abstract: 93C56 memory 93C46 93C46 6 93C46 93C66 93c66 6 93C66 catalyst 602-8443
Contextual Info: CAT93C46/56/66 CAT93C46/56/66 1K/2K/4K-Bit Serial E2PROM FEATURES • High Speed Operation: 1MHz ■ Power-Up Inadvertant Write Protection ■ Low Power CMOS Technology ■ 1,000,000 Program/Erase Cycles ■ 1.8 to 6.0 Volt Operation ■ 100 Year Data Retention

CAT93C57

Abstract: 93C57
Contextual Info: CAT93C57 CAT93C57 2K-Bit Serial E2PROM FEATURES • High Speed Operation: 1MHz ■ Self-Timed Write Cycle with Auto-Clear ■ Low Power CMOS Technology ■ Sequential Read Operation ■ Wide Operating Voltage Range ■ Power-Up Inadvertant Write Protection

Contextual Info: CAV93C66 4 Kb Microwire Serial CMOS EEPROM Description The CAV93C66 is a 4 Kb CMOS Serial EEPROM device which is organized as either 256 registers of 16 bits ORG pin at VCC or 512 registers of 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the DI (or DO) pin. The device features