TF 216 10A 250V Search Results

tf 216 10a 250v

Abstract: W01-01H 10Amp 250V Thermal CUTOFF K10B-142 thermal cutoff fuse 5050 ir led tf 77 10a 250v thermal-cutoff K10B-103
Contextual Info: Type K10B Thermal Cutoff Temperature rated Fuse 10Amp Axial Leaded www.optifuse.com (619) 593-5050 Ratings: Ampere Rating: 10A Axial Leaded Voltage Rating: 250V AC Agency Standards and Listings: Part Number K10B-077 K10B-087 K10B-094 K10B-099 K10B-103 K10B-113

usw-1

Abstract: thermal cutoff fuse USW-104T USW-122T USW-110T f 161 USW-139T USW-102T USW-109T USW-108T
Contextual Info: Thermal cutoff fuse. USW-1 U.S. Electronics Inc Thermal Cutoff Fuses Ph: 314 423 7550 USW-1 SERIES Fax: (314) 423 0585 TEMPERATURE Part No. Tf Cutoff Temperature Th USW-102T 72°C(161.6°F) 70°C+2°C-2°C 47°C(116.6°F) USW-105T 77°C(170.6°F) 76°C+0°C-4°C

darlington NPN 600V 8a transistor

Abstract: npn darlington 400v 10a npn darlington 6A 400V TO218 20A Darlington NTE256 22a ic NPN Transistor 600V npn darlington 400v 1.*a darlington NPN 600V
Contextual Info: NTE256 Silicon NPN Transistor Darlington w/Damper Diode Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output

Contextual Info: PD - 94167A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.56Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: PD - 94167 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.53Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

DM t 96 10a 250v

Abstract: IRFY11N50CMA 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 94167A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.56Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Thermal Cutoff Fuses

Abstract: tf 115 250v 2a thermal fuse 115 250V 2A thermal fuse 5A 250VAC 150C thermal-cutoff thermal fuse 115 thermal cutoff fuse tf 115 250v 15a USW-110T Thermal Cutoffs
Contextual Info: Thermal cutoffs Thermal Cutoff Fuses U.S. Electronics Inc Ph: 314 423 7550 USW SERIES Fax: (314) 423 0585 PRODUCTS USW -1 Series USW-2 Series OVERVIEW The thermal cutoffs (TCO) are non resetting, thermally sensitive, single pole, normally closed devices and

Contextual Info: AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss

Contextual Info: AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss

IXTT20P50P

Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET IXTH20P50P IXTT20P50P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated - 500V - 20A Ω 450mΩ TO-247 (IXTH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTH20P50P

Abstract: IXTT20P50P IXTH20P50 20P50P ixtt 20P50P 20P50 250V 10A TF 106 ixth 20p50p
Contextual Info: IXTH20P50P IXTT20P50P PolarPTM Power MOSFET VDSS ID25 = = ≤ RDS on - 500V - 20A Ω 450mΩ P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTH20P50P

Contextual Info: PolarPTM Power MOSFET VDSS ID25 IXTH20P50P IXTT20P50P = = ≤ RDS on - 500V - 20A Ω 450mΩ P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: IXTT20P50P IXTH20P50P PolarPTM Power MOSFETs VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 500V - 20A Ω 450mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTT20N50D

Abstract: IXTH20N50D 20n50 20N50D siemens relay rg
Contextual Info: IXTH20N50D IXTT20N50D High Voltage MOSFET VDSX ID25 = = ≤ RDS on N-Channel, Depletion Mode 500V 20A Ω 330mΩ TO-268 (IXTT) G D (TAB) Symbol Test Conditions VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSX Continuous ±30

DF184S

Abstract: DF128S SDF DF141S DF170S tf 216 10a 250v DF240S E117626 DF141S DF66S DF216S
Contextual Info: SDF Thermal Cut-Offs SDF Our Thermal Cut-Offs Organic Thermal Element Type are used to prevent fires caused by abnormal heat generation from circuits and other heat producing electrical products. They are a non-resettable thermal fuse which open electrical contacts

DF216S

Abstract: DF98S DF280S
Contextual Info: SDF Thermal Cut-Offs SDF Our Thermal Cut-Offs Organic Thermal Element Type are used to prevent fires caused by abnormal heat generation from circuits and other heat producing electrical products. They are a non-resettable thermal fuse which open electrical contacts

3551S

Contextual Info: Preliminary Technical Information IXTH20N50D IXTT20N50D High Voltage MOSFET VDSX ID25 N-Channel, Depletion Mode = = ≤ RDS on 500V 20A 330mΩ Ω TO-268 G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ

IXFP20N50P3

Contextual Info: Preliminary Technical Information IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3 Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS ID25 = 500V = 20A   300m RDS on TO-220AB (IXFP) TO-263 AA (IXFA)

20n50p

Contextual Info: Advance Technical Information Polar3TM HiperFETTM Power MOSFETs VDSS ID25 IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3 = 500V = 20A Ω ≤ 300mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) TO-220AB (IXFP)

GXAP02

Abstract: Therm-O-Disc Thermodisc GXAM04 microtemp
Contextual Info: MICROTEMP Thermal Cutoffs: TYPES & SPECIFICATIONS MICROTEMP® thermal cutoffs are available in a range of temperatures and electrical ratings to meet application requirements see figure 3 . There are 5 primary types of thermal cutoffs available. Standard dimensions of each TCO series are shown in figure 4.

IXFH20N50

Abstract: IXFH20N50P3 20n50p 20N50P3 IXFA20N50P3
Contextual Info: Advance Technical Information IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3 Polar3TM HiperFETTM Power MOSFETs VDSS ID25 = 500V = 20A Ω ≤ 300mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) TO-220AB (IXFP)

tf 216 10a 250v

Abstract: DYE*TCO DF184S ISO 8015 tolerance DYE DF84S ISO 8015 tf 115 250v 15a DF240S 250V 10A TF 106 thermoresistor
Contextual Info: RoHS Highly Reliable Safety Device THERMAL LINKS DONG-YANG ELECTRONICS CO., LTD. The ultimate one-shot temperature safety device. Thermal links are designed to provide upper limit temperature protection of all electric and electronic products, keeping the products functioning properly

10P50P

Abstract: IXTP10P50P IXTH10P50P IXTA10P50P IXTQ10P50P IXTP10P50 IXTH10P50
Contextual Info: PolarPTM Power MOSFET IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P P-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G VDSS ID25 RDS(on) TO-220 (IXTP) G G D(TAB) D S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTH10P50

Contextual Info: PolarPTM Power MOSFET IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P P-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G VDSS ID25 RDS(on) TO-220 (IXTP) G G D(TAB) D S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ