TF 513 Search Results

NEC D 809 F

Abstract: NEC D 809 L transistor NEC D 986 E7138
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm

2SC4890

Contextual Info: Ordering number:EN4137 NPN Triple Diffused Planar Silicon Transistor 2SC4890 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (Adoption of HVP process).

2SC4890

Contextual Info: Ordering number:EN4137 NPN Triple Diffused Planar Silicon Transistor 2SC4890 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (Adoption of HVP process).

2SC4891

Abstract: EN4138
Contextual Info: Ordering number:EN4138 NPN Triple Diffused Planar Silicon Transistor 2SC4891 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (Adoption of HVP process).

2SC4891

Abstract: EN4138 c 4138
Contextual Info: Ordering number:EN4138 NPN Triple Diffused Planar Silicon Transistor 2SC4891 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (Adoption of HVP process).

74HC1GU04

Abstract: 74HC1GU04GW 74HCU04 HC1GU04
Contextual Info: INTEGRATED CIRCUITS DATA SHEET 74HC1GU04 Inverter Product specification File under Integrated Circuits, IC06 1998 Nov 18 Philips Semiconductors Product specification Inverter 74HC1GU04 FEATURES QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf = 6.0 ns.

Contextual Info: m IGBT 2230 7^ 2 OOOS'H? 513 • 600 VOLT, F-SERIES MODULES • Low saturation voltage Device Volts VcE sat V ge = 15V Switching Time (Max.) lc Rc R th RTH VF W Cont. PerIGBT Max. lc ton toff tf IGBT Diode Max. Max. Amps Watts Volts Amps usee. usee. usee.

74AHC1GU04

Abstract: 74AHC1GU04GW
Contextual Info: INTEGRATED CIRCUITS DATA SHEET 74AHC1GU04 Inverter Product specification File under Integrated Circuits, IC06 1999 May 19 Philips Semiconductors Product specification Inverter 74AHC1GU04 FEATURES • Symmetrical output impedance QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.

Contextual Info: AN5137K AN5137K * 7 - t U trWft'i'WffliftiiM, PLLfcifc, AGC, AFC, SIFH1H Color TV Video IF Amplifier, PLL Detector, AGC, AFC, SIF Circuit • tt « AN 5137 K Ii , Unit: mm f] =7 - TV COB*\% 43|B]JgJ £ j; V %p tf ^ Jfj jj. g ffl catti #i ;CATvuwter-5 h x i,

74HC1G32

Abstract: 74HC1G32GW 74HCT1G32 74HCT1G32GW SC88A
Contextual Info: INTEGRATED CIRCUITS 74HC1G32 74HCT1G32 2-input OR gate Product specification File under Integrated Circuits, IC06 1997 Dec 16 Philips Semiconductors Product specification 74HC1G32 74HCT1G32 2-input OR gate FEATURES QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns

NAND 74 SOT353

Abstract: 74HC1G00 74HC1G00GW 74HCT1G00 74HCT1G00GW cmos 8 input nand gate 7430
Contextual Info: INTEGRATED CIRCUITS DATA SHEET 74HC1G00; 74HCT1G00 2-input NAND gate Product specification File under Integrated Circuits, IC06 1998 Jul 30 Philips Semiconductors Product specification 74HC1G00; 74HCT1G00 2-input NAND gate FEATURES QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns

hc1g08

Abstract: 74HC1G04 74HCT1G04 74HC1G08 74HC1G08GW 74HCT1G08 74HCT1G08GW 74hct1g
Contextual Info: INTEGRATED CIRCUITS DATA SHEET 74HC1G08; 74HCT1G08 2-input AND gate Product specification File under Integrated Circuits, IC06 1998 Nov 10 Philips Semiconductors Product specification 74HC1G08; 74HCT1G08 2-input AND gate FEATURES QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.

74HC-HCT02

Abstract: 74HC1G02 74HC1G02GW 74HCT1G02 74HCT1G02GW diode marking code 777 HCT1G02
Contextual Info: INTEGRATED CIRCUITS DATA SHEET 74HC1G02; 74HCT1G02 2-input NOR gate Product specification File under Integrated Circuits, IC06 1998 Aug 31 Philips Semiconductors Product specification 2-input NOR gate FEATURES 74HC1G02; 74HCT1G02 QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.

2mb1200

Abstract: DIODE s3l 2MB1300 2mb1200l 2MB1200LB-060 1MB1300L-060 1mb1400l-060 1MBI50L-060 2MB1100L-060 2MBI50L-060
Contextual Info: m 2 E 3 & 7 oooa'ì'ì? 513 IGBT • 600 VOLT, F-SERIES MODULES • Low saturation voltage Device Pc VcE sat R th RTH VF W Per IGBT Max. lc ton toff tf IGBT Diòde Max. Max. Am ps W atts V olts Am ps jjse c. usee. usee. °C/W °C/W Volts usee. 600 600 600

d0117

Contextual Info: 5134300 K E N N E D Y CM S C OR P K E N N E D Y -CM S} CORP 93D 00114 D T-'tf-'ûS'10 D eT J S 1 3 4 3 D D 0 G □ □ 114 4 High Frequency, High Slew Rate Product Specifications and Price information Hybrid Amplifiers Models 750, 760, 770, 780 Features:

Contextual Info: I Ordering number: EN4138 f 2SC4891 N PN T riple Diffused P la n a r Silicon T ra n sisto r Ultrahigh-Defmition CRT Display Horizontal Deflection Output Applications F e a tu r e s • H igh Speed tf= 100ns typ . • H igh reliability (Adoption of HVP process).

TSP50C42

Abstract: tsp50c4x TSP50C TSP50C41
Contextual Info: TSP50C4X Family Speech Synthesizers Design Manual Tf v a «; In s t r u m e n t s 0 ^ 1 7 2 4 Da'll?!! m • IM PO RTANT NOTICE Texas Instruments Tl reserves the right to make changes to or to discontinue any semiconductor product or service identified in this

Contextual Info: Ordering num ber: E N 4137 2SC4890 No.4137 N PN Triple Diffused P la n a r Silicon T ran sisto r , Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications , F e a tu r e s • H igh Speed tf= 100ns typ . - H igh reliability (Adoption of H V P process).

51374-3028

Abstract: SD-51374-027
Contextual Info: 10 ä is NOTES: 2. MATERIAL ; v > : ; : ^ 7 : l c p G S B tf|j y ’- : K e a u l 94v -o HOUSINGsLCPiLIQUID CRYSTAL POLYMER ,GLASS FILLED,WHITE,UL94V-0 7 ? 3 1n l - 5 ' : P P S, UL94V-0 ACTUATOR:PPS POLYPHENYLENE SULFIDE),GLASS FILLED,BROWN,UL94V-0 ( t = 0. 1 5)

mosfet 5130

Abstract: CA5130M
Contextual Info: CA5130, CA5130A Í D SHARRIS U U E M t c tf l D U C T O R 15MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output November 1996 Features Description • MOSFET Input Stage CA5130A and CA5130 are integrated circuit operational am plifiers that combine the advantage of both CMOS and

Contextual Info: * SY10474-3/4/5/7 SY100474-3/4/5/7 SY101474-3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • Address access time, DESCRIPTION tAA: ■ Chip select access time, 3/4/5/7ns max. tA c : 2ns max. ■ Write pulse width, tww: 3ns min. ■ Edge rate, tr/tf: 500ps typ.

Contextual Info: * SY10474-3/4/5/7 SY100474-3/4/5/7 SY101474-3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • Address access time, DESCRIPTION tAA: ■ Chip select access time, 3/4/5/7ns max. tA c : 2ns max. ■ Write pulse width, tww: 3ns min. ■ Edge rate, tr/tf: 500ps typ.

Contextual Info: I METAL FILM FLAT CHIP RESISTORS JIS C 5222-1989*&&,p, q-~~ % RN73 RN73 RN73 Tf g I TYPE ~ 2A 26 2E ’ & DlMENSlONS m m WkO.2 LkO.2 2.0 1.25 1.6 2.5 3.2 - ’ c 0.4 + 0.2 I ’ d IfI “0: 0.3 0.5 LO.3 0.4 tf0.1 . 0.5 0.6 : l‘.C.Ii. +!!SSMt f% %!

transistor c 4137

Abstract: 16AF a006 2SC4890 le1110A BU510
Contextual Info: Ordering number: E N 4 1 3 7 N°-4i37. II 2SC4890 N P N T riple Diffused P la n a r Silicon T ra n s isto r Very High-Defmition CRT Display Horizontal Deflection Output Applications F e a tu re s • H ig h Speed tf= 100ns typ . •H igh re lia b ility (A doption of H V P process).