TF S 544 A Search Results

b1207

Abstract: tf s 544 a tf s 544
Contextual Info: 4 3 THIS OPAMING IS UNPUBLISHED. C | COPYRIGHT 1â RELEASED FÛR PUBLICATION BY AMP INCORPORATED. 1 2 ,19 LOC AJ ALL RiertT5 RESERVED. REVISIONS DIST 16 J REV PER ÛG3Û-Û431-98 28QCT98 MO JC .544 MAX 1. FOR USE WITH: RIGID CABLE 2. SEE *3 R TF E PER A S T M D 1 7 1 0

ic 4580

Abstract: SL 100 NPN Transistor hfe 4053 4833 4834 ITO-220 2SC3162 2SC4051 2SC4663
Contextual Info: H ig h S p e e d S w it c h in g T r a n s is t o r s F3 s er ie s Bipolar transistors NPN Electrica Characteristics Absolute Maximum Ratings Part No. VCEO EIAJ No. VCBO VCEO V ebo Ic IB Pt [V] [V] [V] [A] [A] [W] 3 1 45 500 400 7 6 2 50 10 4 100 (sus) (min)

Contextual Info: CMOS DIGITAL INTEGRATED CIRCUIT KS0068 DOT MATRIX LCD CONTROLLER & DRIVER The K S0068 is a dot m atrix LCD driver & controller LSI which is 100 QFP fabricated by low power C M O S technology. FUNCTIO N • C haracter type dot m atrix LCD driver & controller

IPB156EE

Abstract: SU19 yk 2y
Contextual Info: 0.{|. .IPB156EE/ 8:*3141~9:7- 01/0 65<-7 7-2~= .A>KLIAJ R 56@ koal[`af_ [YhYZadalq R 5 Ejge @ [gf^a_mjYlagf R RmZeafaYlmj]0 klYf\Yj\ OBA dYqgml R VYk` la_`l - ^dmp hjgg^]\ lqh]k YnYadYZd] Ead] Mg2>D57895; R Dfnajgfe]flYd ^ja]f\dq hjg\m[l .QgGR [gehdaYfl/

HY3D

Abstract: HAB 549
Contextual Info: 9;+4252*:;8. 25:.84.-2*:. 1201 :.47.8*:;8. 76=.8 8.3*> 1/}|/*y: /B?LMJBK X Ha_` l]eh]jYlmj]> 549 X 9A koal[`af_ [YhYZadalq X 5 Fgje A [gf^a_mjYlagf X Cj]]hY_]3[d]YjYf[] \aklYf[]@<ee Fad] Mg2>E57895; X 9cU \a]d][lja[ klj]f_l` .Z]lo]]f [gad Yf\ [gflY[lk/ X L]]laf_ UDE 4;440 4:75 j]af^gj[] afkmdYlagf

SU19

Contextual Info: 31~*1 ;=-6474,<=:0 47<0:60/4,<0 98?0: :05,@ 1EBPQNEO Y 54A koal[`af_ [YhYZadalq Fad] Mg2>E57895; Y SU19 569UAC Yhhjgn]\ Zq TK klYf\Yj\ .gfdq ^gj 5 Fgje A/ Y VYk` la_`l Yf\ ^dmp hjgg^]\ lqh]k YnYadYZd] Fad] Mg2>Q9459:696 Y 5 Fgje A Yf\ 5 Fgje C [gf^a_mjYlagfk

TH3L10

Abstract: TK3L10 TH5P4 transistor d 1795 417 TRANSISTOR zener diode 1283
Contextual Info: Darlington T ra n sisto rs Darlington Transistors Bipolartransistors Part l\lo. EIAJ No. Absolute Maximum Ratings VCBO VCEO V ebo lc Ib Pt [V] [V] [V] [A] [A] [W] 100 200 100 100 200 VCEO min 2SD1022 1023 1024 1025 1026 1027 200 200 100 200 200 1349 500

ERD08M-15

Abstract: erd08 A542
Contextual Info: ERD08M-15I5A rsj FAST RECOVERY DIODE : Features Insulated package by fully m o ld in g . • * 7 -T V y m m m m M ost suitable fo r co lo r T .V . d am per. Connection Diagram High voltage by mesa design. • f tf S lS te High reliability : Applications High speed s w itc h in g .

HY3D

Abstract: B744 YL 440
Contextual Info: 64+*4/{5 >@097:7/?@=3 7:?3=9327/?3 <;B3= =38/C 4GDQROGP Fad] Mg2>E57895; X 54A koal[`af_ [YhYZadalq X Cj]]hY_]3[d]YjYf[] \aklYf[]@<ee A 2 3 X 9cU \a]d][lja[ klj]f_l` .Z]lo]]f [gad Yf\ [gflY[lk/ X 5 Fgje A e]]lk UDE 4;440 4:75 j]af^gj[] afkmdYlagf Fad] Mg2>8444:5<6

MG30G6EL1

Abstract: transistor 30A 600v tf s 544 a
Contextual Info: QTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG30G6EL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diodes.

Contextual Info: SEMiX453GAL12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s tpsc Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C

Contextual Info: SEMiX453GAR12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 683 A Tc = 80 °C 526 A 450 A ICnom ICRM SEMiX 3s tpsc Trench IGBT Modules ICRM = 3xICnom 1350 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C

Contextual Info: II N AMER P H IL IP S /D IS C R E T E 5SE D bb53T31 a o n o b i s BUX48 BUX48A T - 3 3 - ls ^ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended fo r use in converters, inverters, switching regulators, motor control systems etc.

TRANSISTOR bd 108

Abstract: transistor TIP 662 Horizontal-Deflection Output transformer tip 410 transistor transistor BD 325 BU108 leistungstransistoren BUY69 BU105 2N5683
Contextual Info: BU 108 NPN SIL IC O N POWER T R A N S IST O R D E S IG N E D FOR H IG H V O L T A G E C.R.T. S C A N N IN G • • • V c e x Rating — 1500 V Peak Collector Current Rating — 5 Amps Fast Switching — tf at 4.5 Am ps 0.7 Microsecond Typical Development Type

transistor BD 325

Abstract: tip 410 transistor transistor bu 126 BU126 TIP 122 transistor TIP 212 BU105 TIP high power transistor for inverter 500V15 transistor TIP 662
Contextual Info: BU126 NPN SILICON POWER TRANSISTOR B U 126 IS A H IG H V O L T A G E NPN S IL IC O N POWER T R A N S IS TO R • Designed for General Industrial and Consumer Applications • Primarily Intended for Use in Switching Mode Power Supplies mechanical specification

PH ON 823

Abstract: MT4S101U PH ON 823 m mje 346
Contextual Info: M T 4 S 1 0 1 U SPICE2G6 model parameters NETLIST .SUBCKT MT4S101U CB 2 3 LWB 2 5 LWE 4 3 Cpe 4 6 Cpb 5 6 LWC 1 6 LWS 4 7 CC 1 3 Ll1 7 8 Ll2 7 9 CBC 1 2 CBS 2 9 CCS 1 9 CES 3 9 Dsub 8 6 Q1 6 5 4 +AREA = .MODEL csub +IS = +N = +BV = +IBV = +CJO = +VJ =

E8267D

Abstract: E8267D dimensions E8267D-H1S 140 Watt 110 Vdc square wave generator E8257D 5989-0698EN N5110B D8PSK 8757D E4418B
Contextual Info: Agilent E8267D PSG Vector Signal Generator Data Sheet The Agilent E8267D is a fully synthesized signal generator with high output power, low phase noise, and I/Q modulation capability. Specifications apply over a 0 to 55 °C range, unless otherwise stated, and

Contextual Info: JANS 2N5152U3 and JANS 2N5154U3 Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION These RHA level 2N5152U3 and 2N5154U3 silicon transistor devices are military Radiation

2N5154U3

Abstract: 2N5152U3 SMD-05
Contextual Info: JANS 2N5152U3 and JANS 2N5154U3 Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION These RHA level 2N5152U3 and 2N5154U3 silicon transistor devices are military Radiation

SF 818 D

Abstract: 1290mm nf 736
Contextual Info: HIGH POWER COAXIAL TERMINATIONS CONDUCTION COOLED The 3000 Series High Power C o a x ia l Term inations are C o n d u c tio n C o o le d Loads th a t require m ounting to an external h e a t sink. Meets a p p lic a b le portions o f MIL-E-5400 a n d MIL-R-55342.

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr D a t a S h e e t No. 2 N 5 1 5 2 L o% #f 1 l $ I c I ^88888 id L SEMICONDUCTORS Type 2N5152L G eneric Part Num ber: 2N5152L Geometry 9201 Polarity NPN Qual Level: JA N -JA N S

Contextual Info: 2N5154 Silicon NPN Transistor D a ta S h e e t Description Applications Semicoa offers: • High-speed power switching • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5154J • JANTX level (2N5154JX)

Contextual Info: 2N5154L Silicon NPN Transistor D a ta S h e e t Description Applications Semicoa offers: • High-speed power switching • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5154LJ • JANTX level (2N5154LJX)

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr D a t a S h e e t No. 2 N 5 1 5 4 o% #f 1 l $ I c I ^88888 id L SEMICONDUCTORS Type 2N5154 G eneric Part Number: 2N5154 Geometry 9201 Polarity NPN Qual Level: JA N -JA N S