Untitled
Abstract: No abstract text available
Text: THCV218_Rev.1.00_E_Brief THCV218 V-by-One HS High-speed video data receiver General Description Features THCV218 is designed to support video data transmission between the host and display. One high-speed lane can carry up to 32bit data and 3 bits of synchronizing signals at a pixel clock
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THCV218
THCV218
32bit
20MHz
85MHz.
1080p/10b/60Hz.
24bit
32bit
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TFBGA105
Abstract: M58PR512J JESD97 M39P0R9080E0 TFBGA-105 strataflash 512mbit
Text: M39P0R9080E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory
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M39P0R9080E0
TFBGA105
TFBGA105
M58PR512J
JESD97
M39P0R9080E0
TFBGA-105
strataflash 512mbit
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TFBGA105
Abstract: KF256 TFBGA-105 M39P0R8070E2 M58PR256J M58PR512J M65KA128AE A12-Amax
Text: M39P0R8070E2 M39P0R9070E2 256 or 512Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 256 (16Mb x 16) or 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst)
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M39P0R8070E2
M39P0R9070E2
512Mbit
TFBGA105
64-bit
TFBGA105
KF256
TFBGA-105
M39P0R8070E2
M58PR256J
M58PR512J
M65KA128AE
A12-Amax
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"NOR Flash"
Abstract: NOR Flash "NOR Flash" 512MB 512MB NOR FLASH MCP market ST Flash 512Mb nor flash memory TFBGA105
Text: 90nm NOR Flash memory subsystem solutions A wide range of 90nm technology-based devices for the latest generation of mobile phones Offering the most advanced NOR Flash devices available, STMicroelectronics is a leading supplier of memory subsystems for mobile applications. Incorporating the very
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133MHz,
256Mb
512Mb
FLNORWIR0206
"NOR Flash"
NOR Flash
"NOR Flash" 512MB
512MB NOR FLASH
MCP market
ST Flash
512Mb nor flash memory
TFBGA105
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TFBGA105
Abstract: M39P0R9070E0 M58PR512J M65KA128AL
Text: M39P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory – 1 die of 128 Mbit (4 Banks of 2Mb x16) Low
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M39P0R9070E0
TFBGA105
64-bit
2112-bit
TFBGA105
M39P0R9070E0
M58PR512J
M65KA128AL
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P46H
Abstract: TFBGA105
Text: M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • ■ ■ ■ ■ ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers
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M58PR256LE
M58PR512LE
M58PR001LE
256-Mbit,
512-Mbit
P46H
TFBGA105
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Untitled
Abstract: No abstract text available
Text: THCV217_Rev.1.00_E_Brief THCV217 V-by-One HS High-speed video data transmitter General Description Features THCV217 is designed to support video data transmission between the host and display. One high-speed lane can carry up to 32bit data and 3 bits of synchronizing signals at a pixel clock
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Original
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PDF
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THCV217
THCV217
32bit
20MHz
85MHz.
1080p/10b/60Hz.
24bit
32bit
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Untitled
Abstract: No abstract text available
Text: THCV218_Rev.1.00_E_Brief THCV218 V-by-One HS High-speed video data receiver General Description Features THCV218 is designed to support video data transmission between the host and display. One high-speed lane can carry up to 32bit data and 3 bits of synchronizing signals at a pixel clock
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Original
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PDF
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THCV218
THCV218
32bit
20MHz
85MHz.
1080p/10b/60Hz.
24bit
32bit
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GNS7560
Abstract: PCF50623 usb 3g modem circuit usb modem diagram block diagram of a smartphone datacard Aero4223 gps modem block diagram 3g modem circuit Aero4260
Text: M6718, DUAL-MODE TD-HSPA/EDGE FLEXIBLE MODEM Cost-efficient, high-performance TD-HSPA/EDGE solution with interfaces and software optimized for modem applications The M6718 offers outstanding network access performance with automatic handover, dual-band TD-SCDMA and quad-band EDGE.
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M6718,
M6718
ARM926EJ
32-kbyte
LFBGA-468
PCF50623
VFBGA-100
Aero4223
GNS7560
PCF50623
usb 3g modem circuit
usb modem diagram
block diagram of a smartphone
datacard
Aero4223
gps modem block diagram
3g modem circuit
Aero4260
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BGB210S
Abstract: CHINA tv kit service code T3G7210 a1208 T7210 PCF50 TFBGA105 PNX5225 TD-SCDMA PCF50626
Text: Complete solution for TD-HSDPA/EDGE with dual-mode automatic handover T3G7210 - T7210 best-in-class system solution for feature phones and modems The T3G7210 dual-mode TD-HSDPA/EDGE solution brings 3G functionality to the China market. It is a state-of-the-art
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T3G7210
T7210
TFBGA105
TD60291
LFBGA240
BGB210S
TFBFA44
BGB210S
CHINA tv kit service code
a1208
PCF50
TFBGA105
PNX5225
TD-SCDMA
PCF50626
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PNX5225
Abstract: T7211 CHINA tv kit service code T7210 3G HSDPA TD60291 PCF50626 GNS7560 ARM926EJ bluetooth encoder h.264
Text: Complete solution for TD-HSDPA/EDGE with dual-mode automatic handover T7210/T7211 best-in-class system solution for feature phones and modems The T7210 / T7211 dual-mode TD-HSDPA/EDGE solution brings 3G functionality to the China market. It is a state-ofthe-art design that offers best-in-class multimedia
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T7210/T7211
T7210
T7211
AERO422x
AERO4260
TD60291
TFBGA105
LFBGA240
T7211FL
PNX5225
CHINA tv kit service code
3G HSDPA
TD60291
PCF50626
GNS7560
ARM926EJ
bluetooth encoder h.264
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TFBGA105
Abstract: TFBGA-105 M39P0R9070E0 M58PR512J M65KA128AL
Text: M39P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA Features summary • Multi-chip package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory
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M39P0R9070E0
TFBGA105
TFBGA105
TFBGA-105
M39P0R9070E0
M58PR512J
M65KA128AL
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TFBGA105
Abstract: CR10 M58PR001LE M58PR512LE
Text: M58PR512LE M58PR001LE 512-Mbit or 1-Gbit x 16, multiple bank, multilevel, burst 1.8 V supply Flash memories Features • ■ ■ ■ ■ ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program
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M58PR512LE
M58PR001LE
512-Mbit
TFBGA105
TFBGA105
CR10
M58PR001LE
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