TGA8014 Search Results

a8014

Contextual Info: TGA8014-SCC 6- TO 18-GHz POWER AMPLIFIER AP PR O VAL 4356 • 11-dB Gain • Greater Than 0.5-Watt Output Power at 1-dB Gain Compression • Designed for Balanced Configuration • Unconditionally Stable • Size: 3,6068 x 1,9304 x 0.1016 mm 0.142x0.076x0.004 In

Contextual Info: TGA8014-SCC Power Amplifier 6 to 18-GHz Frequency Range 11-dB Gain Greater Than 0.5-Watt Output Power at 1-dB Gain Compression Designed for Balanced Configuration Unconditionally Stable 3,6068 x 1,9304 x 0.1016 mm 0.142 x 0.076 x 0.004 in. PHOTO ENLARGEMENT

618 FET

Contextual Info: Texas Instruments TGA8014 Monolithic 6- to 18-GHz Power Amplifier Features • 0.5-watt typical midband output power at 1-dB gain compression ■ 8-dB gain ■ High-order matching filters optimize Class “ A” efficiency ■ Size: 0.140 x 0.074 x 0.004 inch

618 FET

Contextual Info: Texas Instruments TGA8014 Monolithic 6- to 18-GHz Power Amplifier Features • 0.5-watt typical midband output power at 1-dB gain compression ■ 8-dB gain ■ High-order matching filters optimize Class “ A” efficiency ■ Size: 0.140 x 0.074 x 0.004 inch

Contextual Info: Product Data Sheet 6 - 18 GHz Power Amplifier TGA8014-SCC Key Features and Performance • • • • • • 6 to 18 GHz Frequency Range 11 dB Typical Gain Greater Than 0.5 Watt Output Power at 1 dB Gain Compression Designed for Balanced Configuration Unconditionally Stable

TGA6345-EEU

Abstract: TGA8014-SCC
Contextual Info: Product Data Sheet June 6, 2001 6 - 18 GHz Power Amplifier TGA8014-SCC Key Features and Performance • • • • • • 6 to 18 GHz Frequency Range 11 dB Typical Gain Greater Than 0.5 Watt Output Power at 1 dB Gain Compression Designed for Balanced Configuration

TGA8014-SCC

Contextual Info: Product Data Sheet January 18, 2002 6 - 18 GHz Power Amplifier TGA8014-SCC Key Features and Performance • • • • • • 6 to 18 GHz Frequency Range 11 dB Typical Gain Greater Than 0.5 Watt Output Power at 1 dB Gain Compression Designed for Balanced Configuration

Contextual Info: TGA8014-SCC Power Amplifier 6 to 18-GHz Frequency Range 11-dB Gain Greater Than 0.5-Watt Output Power at 1-dB Gain Compression Designed for Balanced Configuration Unconditionally Stable 3,6068 x 1,9304 x 0.1016 mm 0.142 x 0.076 x 0.004 in. PHOTO ENLARGEMENT

TGA8014-SCC

Contextual Info: S-Parameter Data for TGA8014-SCC # GHZ S MA ! TGA8014-SCC ! VD=8V, ID=50%IDSS Frequency GHz 6 6.5 7 7.5 8 8.5 9 9.5 10 10.5 11 11.5 12 12.5 13 13.5 14 14.5 15 15.5 16 16.5 17 17.5 18 S11 MAG 0.55 0.58 0.66 0.73 0.77 0.79 0.79 0.79 0.8 0.81 0.82 0.84 0.85

TGA8014-SCC

Contextual Info: Product Data Sheet 6 - 18 GHz Power Amplifier TGA8014-SCC Key Features and Performance • • • • • • 6 to 18 GHz Frequency Range 11 dB Typical Gain Greater Than 0.5 Watt Output Power at 1 dB Gain Compression Designed for Balanced Configuration Unconditionally Stable

TGA8014-SCC

Contextual Info: Product Data Sheet February 13,2001 6 - 18 GHz Power Amplifier TGA8014-SCC Key Features and Performance • • • • • • 6 to 18 GHz Frequency Range 11 dB Typical Gain Greater Than 0.5 Watt Output Power at 1 dB Gain Compression Designed for Balanced Configuration

Contextual Info: Texas Instruments Microwave Military Components TGM8014 Carrier Plate Assembly Product Features • 0.6-watt average output power at 1-dB gain compression ■ 6 to 18 GHz bandwidth ■ Automated assembly ■ Selectable gate biasing ■ 100% RF screening Product Description

body contact FET soi RF switch

Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines TGA8014-SCC GAAS FET CROSS REFERENCE TGA8021 GAAS FET rf switch CROSS REFERENCE cte table for epoxy adhesive and substrate electric blanket microwave transducer MMIC X-band amplifier
Contextual Info: Gallium Arsenide Products Designers’ Information TriQuint Semiconductor Texas Phone: 972 994-8465 Fax: (972)994-8504 http://www.triquint.com IMPORTANT NOTICE TriQuint Semiconductor (TQS) reserves the right to make changes to or to discontinue any semiconductor product or service identified in this publication without notice. TQS advises

TGA2517

Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
Contextual Info: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint

TGA2517

Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
Contextual Info: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4

fet amplifier schematic

Abstract: FET differential amplifier circuit TGA8300-SCC gaas mesfet "design kit" GaAs MESFET amplifier high power fet amplifier schematic monolithic amplifier 11 MONOLITHIC AMPLIFIERS MESFET Application fet differential amplifier schematic
Contextual Info: 0.5-µm Intermediate-Profile, High-Current MesFET IPHC Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR GATE ACTIVE REGION OHMIC METAL (EXCEPT VIA) SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.5-µm 2MI Process Cross Section

TG2H214220-FL

Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
Contextual Info: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4

ka band lna

Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Contextual Info: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for

TGA2517

Abstract: TGA2540-FL TGA2573 TQM7M5013 TQP6M9002 tga2540 tqp340003 TQM726018 QFN28 6x6 TQM679002A
Contextual Info: May 2010 Product Selection Guide Amplifiers Control Products Filters Integrated Products Optical Components Connecting the Digital World to the Global Network Table of Contents ABOUT TRIQUINT SEMICONDUCTOR .2 GUIDE BY MARKET Automotive . 4

Mil-Std-883 Wire Bond Pull Method 2011

Abstract: MIL-STD-883 Method 2010 pHEMT transistor RF MESFET S parameters MESFET 0.15 phemt p-hemt TGA8310 MIL-STD-883 method 2011 GaAs 0.15 pHEMT
Contextual Info: GaAs MMIC Space Qualification GaAs MMIC Testing TriQuint Semiconductor has advanced Lot Acceptance Testing LAT for High Reliability Applications of GaAs MMICs. A flowchart depicting the entire MMIC processing flow, including the Quality Conformance Inspection