TH58NYG3S0HBAI6 Search Results
TH58NYG3S0HBAI6 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TH58NYG3S0HBAI6 | Toshiba Memory America | Integrated Circuits (ICs) - Memory - IC FLASH 8G PARALLEL 67VFBGA | Original | 739.2KB |
TH58NYG3S0HBAI6 Price and Stock
KIOXIA
KIOXIA TH58NYG3S0HBAI6IC FLASH 8GBIT PARALLEL 67VFBGA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TH58NYG3S0HBAI6 | Tray | 333 | 1 |
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TH58NYG3S0HBAI6 | 1,230 |
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TH58NYG3S0HBAI6 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TH58NYG3S0HBAI6Contextual Info: TH58NYG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G 8 BIT CMOS NAND E PROM DESCRIPTION The TH58NYG3S0HBAI6 is a single 1.8V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 256) bytes 64 pages 4096blocks. |
Original |
TH58NYG3S0HBAI6 TH58NYG3S0HBAI6 4096blocks. 4352-byte 2013-09-20C |