THERMAL CONDUCTIVITY CERAMIC FET Search Results

Contextual Info: Power Modules Win Out, but Choose Wisely Introduction Whether evaluating step-down switching regulators at the silicon-level controller with FET , or power modules where the integration and ease of use of a more complete power supply subsystem may be preferred, system designers everywhere are under enormous pressure. They’re being tasked with integrating

TC3967

Abstract: 2w, GaAs FET thermal conductivity ceramic FET
Contextual Info: TC3967 REV.1_04/27/2005 2W Packaged Self-Bias PHEMT GaAs Power FETs FEATURES • 2W Typical Output Power • 12.5dB Typical Linear Power Gain at 2.45GHz • High Linearity: IP3 = 43 dBm Typical • High Power Added Efficiency: Nominal PAE of 35% • Breakdown Voltage: BVDGO ≥ 15V

AE-POWER

Abstract: TC3967
Contextual Info: TC3967 REV2_20080516 2 W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES • 2W Typical Output Power • 13dB Typical Linear Power Gain at 2.45GHz • • • High Linearity: IP3 = 43 dBm Typical High Power Added Efficiency: Nominal PAE of 35% Breakdown Voltage: BVDGO ≥ 15V

TC3977

Abstract: 2.45Ghz oscillator
Contextual Info: TC3977 PRE2_20050418 Preliminary 3 W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES • 3W Typical Output Power • 12dB Typical Linear Power Gain at 2.45GHz PHOTO ENLARGEMENT • High Linearity: IP3 = 45 dBm Typical • High Power Added Efficiency: Nominal PAE of 35%

TC3889

Abstract: thermal conductivity ceramic FET TC1806
Contextual Info: TC3889 PRE.2_04/27/2005 Preliminary 5W Packaged Self-Bias PHEMT GaAs Power FETs FEATURES • 5W Typical Output Power • 12dB Typical Linear Power Gain at 2.0GHz • High Linearity: IP3 = 47 dBm Typical • High Power Added Efficiency: Nominal PAE of 35% •

TC3879

Abstract: thermal conductivity ceramic FET
Contextual Info: TC3879 PRE1_20070518 Preliminary 7 W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES PHOTO ENLARGEMENT ! 7W Typical Output Power ! 10.5dB Typical Linear Power Gain at 2.45 GHz ! High Linearity: IP3 = 48.5 dBm Typical ! High Power Added Efficiency: Nominal PAE of 35%

TC2996D

Abstract: GaAs FET chip GRM39Y5V104Z25V
Contextual Info: TC2996D REV2_20070503 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 12 W Typical Power at 2.45 GHz • 11 dB Typical Linear Power Gain at 2.45 GHz PHOTO ENLARGEMENT • High Linearity: IP3 = 50 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 %

UM 7106

Abstract: TC2696 2.45 Ghz power amplifier
Contextual Info: TC2696 REV.2_04/12/2004 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES • 2 W Typical Output Power at 2.45 GHz • 14 dB Typical Linear Power Gain at 2.45 GHz • High Linearity: IP3 = 43 dBm Typical at 2.45 GHz • • High Power Added Efficiency:

UM 7106

Abstract: 6847 TC2696 RF FET TRANSISTOR 3 GHZ
Contextual Info: TC2696 REV4_20070507 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES PHOTO ENLARGEMENT • 2 W Typical Output Power at 6 GHz • 10 dB Typical Linear Power Gain at 6 GHz • High Linearity: IP3 = 43 dBm Typical at 6 GHz • High Power Added Efficiency:

IPC-4562

Abstract: BERGQUIST mp-06503 ZPMV UL746E RD2018 HT-04503 HT-09009 Bergquist - Thermal Clad HPL Dielectric CML11-006 ASTM 5470 GAP FILLER
Contextual Info: TCDG_Cover_09.09.qxp 9/8/2009 1:43 PM Page 3 Thermal Solutions For Surface Mount Power Applications ThermalClad S E L E C T I O N G U I D E TCDG_Cover_09.09.qxp 9/8/2009 September 2009 1:43 PM Page 4 Thermal Clad®: U.S. Patent 4,810,563 and others. All statements, technical information and recommendations herein are based on tests we believe to be reliable, and

CAP 0805 ATC 600F

Abstract: chip resistor 1206 CW-37 American Technical Ceramics GaAs FET chip GRM39Y5V104Z25V murata cw
Contextual Info: TC2997D REV3_20050418 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs PHOTO ENLARGEMENT FEATURES • 20W Typical Power at 2.45 GHz • 10dB Typical Linear Power Gain at 2.45 GHz • High Linearity: IP3 = 52 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 %

baara

Abstract: EL7532IY EL7532IYZ babaa EL7532 EL7532IY-T13 EL7532IY-T7 EL7532IYZ-T13 EL7532IYZ-T7 MSOP10
Contextual Info: EL7532 Data Sheet August 12, 2005 FN7435.5 Monolithic 2A Step-Down Regulator Features The EL7532 is a synchronous, integrated FET 2A step-down regulator with internal compensation. It operates with an input voltage range from 2.5V to 5.5V, which accommodates

Contextual Info: TC2876 REV4_20070507 5 W Low-Cost Packaged PHEMT GaAs Power FETs FEATURES PHOTO ENLARGEMENT • 5 W Typical Output Power at 6 GHz • 7 dB Typical Linear Power Gain at 6 GHz • High Linearity: IP3 = 47 dBm Typical at 6 GHz • High Power Added Efficiency:

Alumina submount

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . V ishay Ele c tro - Films l e d sub m o u n t s ceramic thin film led package p r o d uc t o v e r v i e w w w w. v i s h a y. c o m ceramic thin film led package Vishay Electro-Films Vishay Electro-Films: Ceramic Thin Film LED Package

Contextual Info: EL7532 Data Sheet March 16, 2005 FN7435.4 Monolithic 2A Step-Down Regulator Features The EL7532 is a synchronous, integrated FET 2A step-down regulator with internal compensation. It operates with an input voltage range from 2.5V to 5.5V, which accommodates

Contextual Info: EL7532 Data Sheet January 12, 2005 FN7435.3 Monolithic 2A Step-Down Regulator Features The EL7532 is a synchronous, integrated FET 2A step-down regulator with internal compensation. It operates with an input voltage range from 2.5V to 5.5V, which accommodates

10-PIN

Abstract: EL7535 EL7535IY EL7535IY-T13 EL7535IY-T7 MSOP10
Contextual Info: EL7535 Data Sheet April 19, 2004 FN7003 Monolithic 350mA Step-Down Regulator Features The EL7535 is a synchronous, integrated FET 350mA step-down regulator in a MSOP10 package. The regulator is internally compensated, which makes it possible to use just five tiny external components to form a complete

power combiner broadband transformers

Abstract: 4 port circulator high power duplexer HIGH POWER HIGH FREQUENCY CVD DIAMOND CHIP RESISTORS footprint X-band Gan Hemt resistor parasitic capacitance DIAMOND TECHNOLOGIES DUAL JUNCTION CIRCULATOR CT1310D RFTM 9926 transistor
Contextual Info: Diamond Rf Resistives: The Answer to High Power and Low Capacitance | Novembe. Page 1 of 6 November 2011 issue: Technical Feature Diamond Rf™ Resistives: The Answer to High Power and Low Capacitance A single 0402 resistor, manufactured on a CVD diamond substrate, can dissipate 20 W of continuous

pHEMT 6GHz

Abstract: TC3947 tc1401n
Contextual Info: TC3947 REV2_20080516 0.5W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES • 0.5W Typical Output Power at 6GHz • 12dB Typical Linear Power Gain at 6GHz • High Linearity: IP3 = 37 dBm Typical at 6GHz • High Power Added Efficiency: Nominal PAE of 35% at 6GHz

pHEMT 6GHz

Abstract: 0619 817A TC3957
Contextual Info: TC3957 REV2_20080516 1W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES • 1W Typical Output Power at 6GHz • 10dB Typical Linear Power Gain at 6GHz • High Linearity: IP3 = 40 dBm Typical at 6GHz • High Power Added Efficiency: Nominal PAE of 35% at 6GHz

HERMETIC SMD

Abstract: to258 EXCEL SMD SMD Devices smd diode ED CLCC 64 pins footprint TO-25X
Contextual Info: New Materials and Technologies Solve Hermetic SMD Integration Tiva Bussarakons, International Rectifier, Inc., El Segundo, California H ermetic semiconductor Package Construction SMDs surface-mount The SMD package (Figure 1 difdevices) can now be fers considerably from its predecessuccessfully and ecosor, the CLCC (ceramic leadless

TC2896

Abstract: gm 8562 TC289 TC1806
Contextual Info: TC2896 REV4_20070507 5 W Flange Ceramic Packaged GaAs Power FETs FEATURES PHOTO ENLARGEMENT • 5 W Typical Power at 6 GHz • 8 dB Typical Linear Power Gain at 6 GHz • High Linearity: IP3 = 47 dBm Typical at 6 Ghz • High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz

Contextual Info: EL7535 Data Sheet March 16, 2005 FN7003.1 Monolithic 350mA Step-Down Regulator Features The EL7535 is a synchronous, integrated FET 350mA stepdown regulator in a MSOP10 package. The regulator is internally compensated, which makes it possible to use just

EL7532

Abstract: EL7532IL EL7532IL-T13 EL7532IL-T7 EL7532IY EL7532IY-T13 EL7532IY-T7 MSOP10
Contextual Info: EL7532 Data Sheet PRELIMINARY April 26, 2004 FN7435 Monolithic 2A Step-Down Regulator Features The EL7532 is a synchronous, integrated FET 2A step-down regulator with internal compensation. It operates with an input voltage range from 2.5V to 5.5V, which accommodates supplies of 3.3V, 5V, or a Li-Ion