THERMAL CONDUCTIVITY OF SUBSTRATE Search Results
THERMAL CONDUCTIVITY OF SUBSTRATE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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PQU650M-F-COVER | Murata Manufacturing Co Ltd | PQU650M Series - 3x5 Fan Cover Kit, RoHs Medical |
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TCTH011AE |
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type |
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TCTH022AE |
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function |
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TCTH012AE |
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function |
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TCTH021AE |
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type |
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THERMAL CONDUCTIVITY OF SUBSTRATE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Bergquist Thermal Clad Technical Data HT-04503 HIGH TEMPERATURE DIELECTRIC Benefits • Very low thermal resistance of 0.05°Cin2/W (0.32°Ccm2/W) • High thermal conductivity of 2.2 W/m-K • High temperature applications • Lead-free solder compatible |
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HT-04503 | |
comparative tracking index ceramicContextual Info: Bergquist Thermal Clad Technical Data HT-07006 HIGH TEMPERATURE DIELECTRIC Benefits • Very low thermal resistance of 0.11°Cin2/W (0.71°Ccm2/W) • High thermal conductivity of 2.2 W/m-K • High temperature applications • Lead-free solder compatible |
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HT-07006 comparative tracking index ceramic | |
UL796Contextual Info: Bergquist Thermal Clad Technical Data HPL-03015 HIGH POWER LIGHTING DIELECTRIC Superior Dielectric Lowers Operating Temperatures Benefits • Very low thermal resistance of 0.02°Cin2/W (0.13°Ccm2/W) • High thermal conductivity of 3.0 W/m-K • High temperature applications |
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HPL-03015 UL796 | |
Contextual Info: Bergquist Thermal Clad Technical Data MP-06503 MULTI-PURPOSE DIELECTRIC Benefits • Thermal resistance 0.09°Cin2/W (0.58°Ccm2/W) • Thermal conductivity of 1.3 W/m-K • Multi-Purpose applications • Lead-free solder compatible • Eutectic AuSn compatible |
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MP-06503 | |
Contextual Info: CBM-360 Product Datasheet CBM-360 LEDs Features: • Extremely high optical output: Over 5,000 lumens from a single package white Table of Contents • High thermal conductivity package - junction to heat sink thermal resistance of only 0.9 6°C/W Technology Overview . . . . . .2 |
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CBM-360 PDS-001253 | |
Contextual Info: CBM-360 Product Datasheet CBM-360 LEDs Features: • Extremely high optical output: Over 5,000 lumens from a single package white Table of Contents • High thermal conductivity package - junction to heat sink thermal resistance of only 0.9 6°C/W Technology Overview. . . . . . 2 |
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CBM-360 PDS-001253 | |
DWG-001216
Abstract: CBT-90 NCP15XH103J03RC 6500K
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CBT-90 DWG-001216 NCP15XH103J03RC 6500K | |
Contextual Info: CBT-90-UV-405 Product Datasheet CBT-120 Product PreliminaryPreliminary Datasheet CBT-90-UV-405 LEDs Features: •• >6.5 W of optical power from 400 nm to 410 nm. •• High thermal conductivity package . ›› Junction to heat sink thermal resistance of 0.9 °C/W |
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CBT-90-UV-405Product CBT-120 CBT-90-UV-405 PDS-001xxx | |
CBT-120
Abstract: PDS-001226 NCP15XH103J03RC LM2500 cbt-120-g-c11 NCP15XH103J03 KF300 RC11B DF-3 dwg001124
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CBT-120 PDS-001226 NCP15XH103J03RC LM2500 cbt-120-g-c11 NCP15XH103J03 KF300 RC11B DF-3 dwg001124 | |
CF 775
Abstract: cf775 JC200 HC100 NCP15XH103J03RC CBT-40-G-C21-JC200 R5631 A 1050 09
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CBT-40 CF 775 cf775 JC200 HC100 NCP15XH103J03RC CBT-40-G-C21-JC200 R5631 A 1050 09 | |
DWG-001216
Abstract: 001216 NCP15XH103J03RC dj bj 810 215R6 CBT-90 DNG14-250FL
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CBT-90 DWG-001216 001216 NCP15XH103J03RC dj bj 810 215R6 DNG14-250FL | |
Contextual Info: M/A-COM Passive Component Division offers a wide selection of metallized 9 9 5 + % alumina AlaOa substrates and aluminum nitride ceramic which is an attractive alternative where power and thermal conductivity are a concern. Polished surfaces of less than one microinch |
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Contextual Info: AfaCßM Metallized Substrates For Microwave Integrated Circuits M/A-COM offers a wide selection of metallized 995 alumina AI2O3 substrates and aluminum nitride ceramic which is an attractive alternative where power and thermal conductivity are a concern. Polished |
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MIL-G-45204 | |
Contextual Info: Thick Film Chip Resistor High Power Chip Resistor, wide terminal type Industry/Field: Automotive electronics, Industrial equipment Expansion of products line-up Excellent solder junction and high thermal conductivity with wide terminal • Development Target: |
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Contextual Info: CBT-90-UV Product Datasheet CBT-120 Product Preliminary CBT-90-UV LEDs Features: • Greater than 6.5 W of optical power from 400 nm to 410 nm. • High thermal conductivity package . › Junction to heat sink thermal resistance of 0.9 °C/W • Luminus Big Chip LED technology for very high power density and uniform surface |
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CBT-90-UVProduct CBT-120 CBT-90-UV CBT-90 PDS-002171 | |
tyre pressure sensor
Abstract: "electromagnetic pulse"
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Contextual Info: CBT-120-UV CBT-120 Product Product Datasheet CBT-120-UV LEDs Features: •• Over 16.0 W of optical power typical from 382 nm to 392 nm. Table of Contents Technology Overview. . . . . . 2 Binning Structure. . . . . . . . . . 3 •• High thermal conductivity package . |
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CBT-120-UVProduct CBT-120 CBT-120-UV PDS-001574 | |
wacker silicone paste
Abstract: silicone paste p 12 IEC 326-3 Wacker Silicones P-12 Wacker Silicones pcb board of miniskiip 2 Wacker miniskiip board SEMIKRON BOARD wacker rubber
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Contextual Info: CBT-90-UV Product Datasheet CBT-120 Product Preliminary CBT-90-UV LEDs Features: •• Greater than 6.5 W of optical power from 400 nm to 410 nm. •• High thermal conductivity package . ›› Junction to heat sink thermal resistance of 0.9 °C/W •• Luminus Big Chip LED technology for very high power density and uniform surface |
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CBT-90-UVProduct CBT-120 CBT-90-UV CBT-90 PDS-002171 | |
1000HContextual Info: Crystal Plate Crystal Plate for Projectors • Features ● The crystal plate for projectors is large and transparent, and made of high-quality crystal. ● Excellent heat dissipation due to the high thermal conductivity of crystal. ● Processed at an angle that is not affected by double refraction |
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450650nm 1000H 1000H | |
hfr 20w
Abstract: RFT250 flange RF termination 50 RFT050 RFT010
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RFT010 RFT010; RFT050; RFT100; RFT250 hfr 20w RFT250 flange RF termination 50 RFT050 | |
X-band Gan Hemt
Abstract: GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535
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AN-011 AN-011: X-band Gan Hemt GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535 | |
thermal impedance for IMS
Abstract: AB20-4 International Resistive Company
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27w/m- thermal impedance for IMS AB20-4 International Resistive Company | |
thermal conductivity sensor
Abstract: CO826
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CO826 thermal conductivity sensor CO826 |