THYRISTOR H 1500 CH Search Results

A1492

Abstract: Thyristor T thyristor a1592
Contextual Info: Datenblatt / Data sheet N Netz-Thyristor Phase Control Thyristor T 1500 N 12.18 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max

Contextual Info: Datenblatt / Data sheet N Netz-Thyristor Phase Control Thyristor T 1500 N 12.18 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max

static var compensator

Abstract: HIGH VOLTAGE THYRISTOR thyristor 12000V 1500A press pack thyristor 8000 VDRM THYRISTOR H 1500 press pack thyristor high power thyristor Vdrm 6000 press pack thyristor 10000 VDRM FT1500AU-240 U240
Contextual Info: Mitsubishi Thyristor FT1500AU-240 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Ultra High Voltage Thyristor 1500 Amperes/12000 Volts J x K (BOTH SIDES) H TYP GATE (WHITE) G TYP AUX CATHODE POTENTIAL CONNECTOR (RED) F

Contextual Info: 4bêfc>S2b OOOlbfi^ AMO H I X Y nixYs If i i 700 900 1300 1500 1700 > > > < < < Thyristor Modules Thyristor/Diode Modules 600 800 1200 1400 1600 MCC250 iTAV= 2 x 287 a MCD250 VRRM= 600-1600 V T ype Version 1 Version 1 M CC250*06io1 M CC250-08ÌO1 MCC2S0-121O1

Contextual Info: 4bflb22b □OQlbb'l TS2 H I X Y DIXYS < < < ! I Thyristor Modules Thyristor/Diode Modules V mm Vo», V 500 700 900 1300 1500 1700 1900 400 600 000 1200 1400 1600 1600* MCC72 MCD72 iTAV= 2 x 85 A VRRM= 400-1800 v Type Version 1 B MCC72-064O1 MCC72-08ÌO1 MCC72-12Ì01

Contextual Info: HbflbBEb G0Dlb77 OS'i H I X Y d ix y s Thyristor Modules MCC132 iTAV= 2 x 130 A Thyristor/Diode Modules MCD132 vRRM= 600-1800 v Vr w V o *. V Vm Vmm V Type Version 1 Version 1 700 900 1300 1500 1700 1900 600 800 1200 1400 1600 1800* M C C 132-06io1 M C C 132-06io1

Contextual Info: 4bflb55b 00Glb73 Mfl3 H I X Y n ix Y S Thyristor Modules Thyristor/Diode Modules V mn V mm V Vmm Vow V 500 700 900 1300 1500 1700 1900 400 600 800 1200 1400 1600 1800* MCC95 MCD95 iTAV= 2 x 116 A VRRM= 400-1800 v Type Version 1 B MCC95-06ÌO1 MCC95~08io1 MCC95-12I01

Contextual Info: • MbflbS2b GQGlbS3 b^S H I X Y a ix Y S Thyristor Modules MCC19 iTAV= 2 x 18 A Vrpm = 600-1600 V i 1 1 > > > ; 1 1 1 > > > 700 900 1300 1500 1700 Type Version 1 B 600 800 1200 1400 1600 MCC19-06ÌO1 MCC19-08io1 MCC19-12io1 MCC19-14io1 MCC19-16io1 Symbol

Contextual Info: v u e 25 Three Phase Rectifier Bridge IdAVM = Ita v m =: with Fast Diodes and "Softstart" Thyristor V = VRSM VDSM VRRM v DRM V V 1300 1500 1700 1200 1400 1600 Symbol ^dAV ^dAV M ^TAVM ^F S H ’ ^TSM l2t di/dt cr 1 O6 o- VUC 25-12go2 VUC 25-14go2 VUC 25-16go2

T161-160

Abstract: SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100
Contextual Info: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing phase control thyristors, rectifier diodes, high frequency thyristors, fast recovery diode and fast switching thyristors along with about 300 components.

THYRISTOR H 1500 ch

Abstract: H955CHXX thyristor phase control rectifier 955A Power thyristor PULSE thyristor thyristor control circuit 640C H955CH H955
Contextual Info: PHASE CONTROL THYRISTOR H955CHXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-1800 V 125 200-1800 V 125 125 80 80 mA mA 955 A 1500 A 12.50 kA 781 kA2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive

THYRISTOR H 1500

Abstract: thyristor TD 42 F 1000 A thyristor Hind Rectifiers 2596 thyristor phase control rectifier Phase Control Thyristor 1000 A 1000 v thyristor Hirect thyristor TD 42
Contextual Info: PHASE CONTROL THYRISTOR H2900CHXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-2500 V 125 200-2500 V 125 125 200 200 mA mA 2900 A 4550 A 39.20 kA 7683 kA2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive

thyristor phase control rectifier

Abstract: THYRISTOR H 1500 thyristor triggering THYRISTOR H 1500 ch
Contextual Info: PHASE CONTROL THYRISTOR H3200CHXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-2000 V 125 200-2000 V 125 125 200 200 mA mA 3200 A 5000 A 50.40 kA 12701 kA2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive

2596

Abstract: Hind Rectifiers Hirect thyristor control circuit thyristor phase control rectifier 1800V 2000 A THYRISTOR specification of reverse conducting thyristor thyristor control thyristor DATASHEET 1000 A 1000 v thyristor
Contextual Info: PHASE CONTROL THYRISTOR H1800CHXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-2000 V 125 200-2000 V 125 125 150 150 mA mA 1800 A 2830 A 24 kA 2880 kA2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive

1800V 2000 A THYRISTOR

Abstract: Hirect thyristor phase control rectifier thyristor control circuit 2596 H-2000 CH PULSE thyristor specification of reverse conducting thyristor H2000CH THYRISTOR 1200
Contextual Info: PHASE CONTROL THYRISTOR H2000CHXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-180 V 125 200-180 V 125 125 70 70 mA mA 2000 A 3140 A 36 kA 6480 kA2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive

600V 100 A THYRISTOR

Abstract: Hirect specification of reverse conducting thyristor 2596 THYRISTOR 1200 thyristor phase control rectifier thyristor DATASHEET 650C HIND THYRISTOR Hirect THYRISTOR CAPSULE
Contextual Info: PHASE CONTROL THYRISTOR H1590CHXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-600 V 125 200-600 V 125 125 80 80 mA mA 1590 A 2500 A 20 kA 2000 kA2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive

thyristor t 558 f

Abstract: Hirect thyristor N 600 ch 14 HF120TB THYRISTOR H 1500 ch HF600CH13DHO thyristor TT 188 F HF80TB
Contextual Info: t Hind Rectifiers’ High frequency ‘S’ series capsule thyristors have interdigitated gate structure. These devices have low switching losses and high di/dt performance. Ordering information Example : HF600CH13DHO HF 600 CH 1 2 3 1 HF: Fast Turn off thyristors

DCR370T

Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
Contextual Info: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches

galvanized iron thermal conductivity

Abstract: 122.04.02 dps 350 power supply schematic reliance thyristor 400V motor operated valves wiring diagrams reliance thyristor wiring diagram 135.12.02 automax dps 450 power supply schematic 1620a 17
Contextual Info: AutoMax DPS DC Power Module Instruction Manual User Manual: 49 1335-e 06 Publication: AMXDPS-UM003D-EN TABLE OF CONTENTS GENERAL NOTES Chapter 1. Chapter 2. DESCRIPTION WITH SCHEMATIC DIAGRAM 1.5 Features .

H125TBXX

Abstract: H125TB hirect thyristor h 250 tb 15 1200V 100 A THYRISTOR Phase Control Thyristor thyristor h 250 tb HIND THYRISTOR 2596 ND transistor
Contextual Info: PHASE CONTROL THYRISTOR H125TBXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-1600 V 125 200-1600 V 125 125 25 25 mA mA 125 A 195 A 2.50 kA 31 kA2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive

MOS Controlled Thyristor

Abstract: thyristor lifetime
Contextual Info: Static and Switching Characteristics of 6500 V Silicon Carbide Anode Switched Thyristor Modules Siddarth Sundaresan, Aye-Mya Soe, Ranbir Singh GeneSiC Semiconductor Inc. Dulles, VA 20152, USA Abstract— Silicon Carbide Anode Switched Thyristors ASTs overcome major limitations of conventional Si and SiC IGBT

H175TB

Abstract: H175TBXX 1200V 100 A THYRISTOR HIND THYRISTOR thyristor phase control rectifier 2596 Hirect rs 450 l 850C
Contextual Info: PHASE CONTROL THYRISTOR H175TBXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-1800 V 125 200-1800 V 125 125 50 50 mA mA 175 A 275 A 4.60 kA 106 kA2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive

H150TBXX

Abstract: H150TB 2596 thyristor phase control rectifier 1200V 100 A THYRISTOR Hirect thyristor phase control
Contextual Info: PHASE CONTROL THYRISTOR H150TBXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-1600 V 125 200-1600 V 125 125 25 25 mA mA 150 A 235 A 3 kA 45 kA2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive peak reverse voltage

H250TBXX

Abstract: H250TB 1200V 100 A THYRISTOR thyristor h 250 tb 15 Hirect thyristor phase control rectifier DI 392
Contextual Info: PHASE CONTROL THYRISTOR H250TBXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-1800 V 125 200-1800 V 125 125 50 50 mA mA 250 A 392 A 4.60 kA 106 kA2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive