THYRISTOR T 250 N 1200 Search Results

LT 220 diode

Contextual Info: nixYS ' !. :-u r’ Thyristor Modules Thyristor/Diode Modules MCC 220 MCD 220 ^TRMS ^TAVM = 2 x 400 A = 2 x 250 A V RRM = 800 -1600 V v RSM V RRM v DSM v DRM V V Version 1 Version 1 900 1300 1500 1700 800 1200 1400 1600 MCC 220-08ÌO1 MCC 220-12io1 MCC 220-14io1

Contextual Info: 4bêfc>S2b OOOlbfi^ AMO H I X Y nixYs If i i 700 900 1300 1500 1700 > > > < < < Thyristor Modules Thyristor/Diode Modules 600 800 1200 1400 1600 MCC250 iTAV= 2 x 287 a MCD250 VRRM= 600-1600 V T ype Version 1 Version 1 M CC250*06io1 M CC250-08ÌO1 MCC2S0-121O1

Contextual Info: Technische Information / technical information Netz-Thyristor-Modul Phase Control Thyristor Module TT251N Key Parameters VDRM / VRRM 1200 – 1800 V ITAVM 250 A TC=85 °C ITSM VT0 9100 A 3570A (TC=55°C) 0,8 V rT 0,7 mΩ RthJC 0,124 K/W Base plate 50 mm

7MBR50SD120

Abstract: design sine wave power inverter thyristor 12V it 1A 7MBR50SD 12TR40
Contextual Info: 7MBR50SD120 IGBT Modules PIM/Built-in converter with thyristor and brake S series 1200V / 50A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive

LT 0216 diode

Abstract: 20/LT 0216 diode diode bridge LT 405
Contextual Info: DIXYS MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules ^TRMS ^TAVM V RRM V RSM V RRM VDSM v DRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Symbol Test Conditions ^TRMS’ ^FRMS T VJ - T VJM Tc = 85°C; 180° sine ^TAVM’ ^FAVM ^TSM’ ^FSM Ji2dt

SKMT250

Abstract: SKKL D2101-2 SKKT250 SKKL250 semikron thyristor skkt 800 skkt250/16ge SKKT250/SKMT2501
Contextual Info: SEMIKRON V rsm V rrm dv/ V drm dt cr V V Itav (sin. 18C Tease = . . •) V/|iS 220 A (88 °C) 260 A (82 °C) 220 A (88 °C) 260 A (82 °C) 900 800 500 1300 1200 500 1300 1200 1000 1500 1400 1000 1700 1600 1000 1900 1800 1000 2100 2000 1000 2300 2200 1000

Contextual Info: Technische Information / technical information Netz-Thyristor-Modul Phase Control Thyristor Module TT250N Key Parameters VDRM / VRRM 1200 – 1800 V ITAVM 250 A TC=85 °C ITSM VT0 7000 A 3570A (TC=55°C) 0,8 V rT 0,7 mΩ RthJC 0,124 K/W Base plate 50 mm

rs 301-678

Abstract: 1200V 100 A THYRISTOR mkp 10 500v 3 phase thyristor dc drive thyristor 1200v DIODE 0536 phase angle control circuit 2500V. 300A. diodes thyristor controller phase angle trigger module 301-678
Contextual Info: Issued March 1991 J6575 Encapsulatedthyristor anddiodepacks A range of encapsulated modules, either thyristor or diode, available in two voltage ratings 800VRRM and 1200V RRM for 250 Vrms and 440 Vrms respectively. The thyristor module is available in five current

Contextual Info: inixYS £ — - . Thyristor Modules Thyristor/Diode Modules . . V DSM V DRM V V Version 1 B Version 8 B Version 8 B 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCD 72-08io8 B MCD 72-12io8 B MCD 72-14io8 B

j45ac

Contextual Info: 4 b ô b 2 2 b GDGlbflS ITS « I X Y m xYS MCC220 iTAV= 2 X 250 A MCD220 v RRM= 600-1600 V Thyristor Modules Thyristor/Diode Modules Type V V Version 1 Version 1 | 700 900 1300 1500 1700 600 800 1200 1400 1600 MCC220*06io1 MCC220-08io1 MCC220-12io1 MCC220-14ÍO1

Contextual Info: Technische Information / technical information Netz-Thyristor-Modul Phase Control Thyristor Module TT170N Key Parameters VDRM / VRRM 1200 V – 1800 V ITAVM 170 A TC=85 °C ITSM VT0 5200 A 3570A (TC=55°C) 0,95 V rT 1,0 mΩ RthJC 0,17 K/W Base plate 50 mm

SKKL250

Contextual Info: s e MIKRDN V rsm V rrm dv/ V drm dt cr 420 A | | 420 A | Itav (sin. 180 Tease = - • •) V/|iS 220 A (88 ° C ) 260 A (82 ° C ) 220 A (88 °C ) 260 A (82 ° C ) V V 900 1300 1300 1500 1700 1900 2100 2300 800 1200 1200 1400 1600 1800 2000 2200 SKKT 210/08 D

mmo-90 14 106

Abstract: w3c2 mmo-90 14 io6 3x82 SOT-227 pcb 9012IO
Contextual Info: AC Controller Contents 1600 Type Page 1800 1400 VRRM/VDRM V 600 800 IRMS 1200 AC Controller Circuit configuration A 08 12 14 16 18 1 2 1 2 3 3 4 5 39 86 ● ● ● ● MLO 36-.io1 MLO 75-.io1 G-2 G-5 39 86 ● ● ● ● MMO 36-.io1 MMO 75-.io1 G-2

thyristor st 103

Abstract: mcc95 16 101 CD-951 MCC90 MCC95-12IO1 v06v MCR-SL-S-1/thyristor st 103
Contextual Info: 4bE D • 4bfib22b G D Q i n e S » I X V I X V S CORP D IX Y S T - z s Thyristor Modules Thyristor/Diode Modules 500 700 900 1300 1500 1700 >1 >i > V *» V om V 400 600 800 1200 1400 1600 MCC95 i TAV = 2 x 1 1 6 a MCD95 vRRM= 400- I 600 v Type Version 1 Version 8

semikron skMt 132

Abstract: KT-132 semikron skkt 90 thyristor T-50
Contextual Info: s e m ik r o n Vrsm Vrrm dv/dt cr V drm V V V/|is Itrms (maximum values for continuous operation) I 250 A | 220 A | 250 A 220 A 148 A SKKT Itav (sin. 18C Tease = 80 °C') 168 A 148 A 168 A SKKT SKKH 800 500 132/08 D 162/08 D 132/08 D 162/08 D 1300 1200 1000

Contextual Info: MITSUBISHI THYRISTOR MODULES TM25RZ/EZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE TM25RZ/EZ-24,-2H Average on-state current . 25A Average forward current . 25A Repetitive peak reverse voltage . 1200/1600V VDRM Repetitive peak off-state voltage

Contextual Info: MITSUBISHI THYRISTOR MODULES TM25RZ/EZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE TM25RZ/EZ-24,-2H Average on-state current . 25A Average forward current . 25A Repetitive peak reverse voltage . 1200/1600V VDRM Repetitive peak off-state voltage

skkt 90

Abstract: KT25 KT213 mikron
Contextual Info: s e MIKROn V rsm V rrm Vdrm V V 900 dv/dt cr Itrms (maximum values for continuous operation) 370 A | 420 A j j 420 A Ita v (sin. 180; case —85 °C 250 A V/ns 230 A SKKT SKKT 800 500 213/08D 253/08 D 250 A SKKH 1200 1000 213/12 E 253/12 E 213/12 E 253/12 E

LT 0216 diode

Contextual Info: SGS-THOMSON MDS50 RiilD @lS il[L[l(gT[S©liD©i DIODE / THYRISTOR MODULE FEATURES • VDr m =V rrm UP TO 1200 V = 35A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(rmS ■ It(AV) DESCRIPTION The MDS50 family are constitued of one rectifier

Contextual Info: MITSUBISHI THYRISTOR MODULES TM200RZ/EZ/GZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE TM200RZ/EZ/GZ-M,-H,24,-2H Average on-state current . 200A Average forward current . 200A Repetitive peak reverse voltage . 400/800/1200/1600V

200A thyristor gate control circuit

Contextual Info: MITSUBISHI THYRISTOR MODULES TM200RZ/EZ/GZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE TM200RZ/EZ/GZ-M,-H,24,-2H Average on-state current . 200A Average forward current . 200A Repetitive peak reverse voltage . 400/800/1200/1600V

7MBR25SC120

Abstract: design sine wave power inverter thyristor 12V it 1A
Contextual Info: 7MBR25SC120 IGBT Modules PIM/Built-in converter with thyristor and brake S series 1200V / 25A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive

7MBR50SD120

Abstract: thyristor 12V it 1A thyristor inverter thyristor 25A igbt module 1200v 50a brake thyristor 12V 1A
Contextual Info: 7MBR50SD120 IGBT Modules PIM/Built-in converter with thyristor and brake S series 1200V / 50A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive

Contextual Info: S EM IK R O N zurück V rsm V rrm V drm V V 1300 1200 SKNH 56/12 E 1500 1400 SKNH 56/14 E 1700 1600 SKNH 56/16 E 1900 1800 SKNH 56/18 E SEMIPACK 1 Modules with Thyristor and Free-Wheeling Diode ld P 3/120, Tamb = 45 °C 70 A Symbol Conditions SKNH 56 SKNH 91 1>