Untitled
Abstract: No abstract text available
Text: Technische Information / technical information Netz-Thyristor-Modul Phase Control Thyristor Module TT251N Key Parameters VDRM / VRRM 1200 – 1800 V ITAVM 250 A TC=85 °C ITSM VT0 9100 A 3570A (TC=55°C) 0,8 V rT 0,7 mΩ RthJC 0,124 K/W Base plate 50 mm
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TT251N
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7MBR50SD120
Abstract: design sine wave power inverter thyristor 12V it 1A 7MBR50SD 12TR40
Text: 7MBR50SD120 IGBT Modules PIM/Built-in converter with thyristor and brake S series 1200V / 50A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive
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7MBR50SD120
7MBR50SD120
design sine wave power inverter
thyristor 12V it 1A
7MBR50SD
12TR40
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information Netz-Thyristor-Modul Phase Control Thyristor Module TT250N Key Parameters VDRM / VRRM 1200 – 1800 V ITAVM 250 A TC=85 °C ITSM VT0 7000 A 3570A (TC=55°C) 0,8 V rT 0,7 mΩ RthJC 0,124 K/W Base plate 50 mm
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TT250N
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rs 301-678
Abstract: 1200V 100 A THYRISTOR mkp 10 500v 3 phase thyristor dc drive thyristor 1200v DIODE 0536 phase angle control circuit 2500V. 300A. diodes thyristor controller phase angle trigger module 301-678
Text: Issued March 1991 J6575 Encapsulatedthyristor anddiodepacks A range of encapsulated modules, either thyristor or diode, available in two voltage ratings 800VRRM and 1200V RRM for 250 Vrms and 440 Vrms respectively. The thyristor module is available in five current
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J6575
rs 301-678
1200V 100 A THYRISTOR
mkp 10 500v
3 phase thyristor dc drive
thyristor 1200v
DIODE 0536
phase angle control circuit
2500V. 300A. diodes
thyristor controller
phase angle trigger module 301-678
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information Netz-Thyristor-Modul Phase Control Thyristor Module TT170N Key Parameters VDRM / VRRM 1200 V – 1800 V ITAVM 170 A TC=85 °C ITSM VT0 5200 A 3570A (TC=55°C) 0,95 V rT 1,0 mΩ RthJC 0,17 K/W Base plate 50 mm
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TT170N
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mmo-90 14 106
Abstract: w3c2 mmo-90 14 io6 3x82 SOT-227 pcb 9012IO
Text: AC Controller Contents 1600 Type Page 1800 1400 VRRM/VDRM V 600 800 IRMS 1200 AC Controller Circuit configuration A 08 12 14 16 18 1 2 1 2 3 3 4 5 39 86 ● ● ● ● MLO 36-.io1 MLO 75-.io1 G-2 G-5 39 86 ● ● ● ● MMO 36-.io1 MMO 75-.io1 G-2
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2x30-.
2x45-.
2x60-.
mmo-90 14 106
w3c2
mmo-90 14 io6
3x82
SOT-227 pcb
9012IO
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI THYRISTOR MODULES TM25RZ/EZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE TM25RZ/EZ-24,-2H Average on-state current . 25A Average forward current . 25A Repetitive peak reverse voltage . 1200/1600V VDRM Repetitive peak off-state voltage
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TM25RZ/EZ-24
1200/1600V
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI THYRISTOR MODULES TM25RZ/EZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE TM25RZ/EZ-24,-2H Average on-state current . 25A Average forward current . 25A Repetitive peak reverse voltage . 1200/1600V VDRM Repetitive peak off-state voltage
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TM25RZ/EZ-24
1200/1600V
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI THYRISTOR MODULES TM200RZ/EZ/GZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE TM200RZ/EZ/GZ-M,-H,24,-2H Average on-state current . 200A Average forward current . 200A Repetitive peak reverse voltage . 400/800/1200/1600V
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TM200RZ/EZ/GZ-M
400/800/1200/1600V
E80276
E80271
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200A thyristor gate control circuit
Abstract: No abstract text available
Text: MITSUBISHI THYRISTOR MODULES TM200RZ/EZ/GZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE TM200RZ/EZ/GZ-M,-H,24,-2H Average on-state current . 200A Average forward current . 200A Repetitive peak reverse voltage . 400/800/1200/1600V
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TM200RZ/EZ/GZ-M
400/800/1200/1600V
E80276
E80271
200A thyristor gate control circuit
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7MBR25SC120
Abstract: design sine wave power inverter thyristor 12V it 1A
Text: 7MBR25SC120 IGBT Modules PIM/Built-in converter with thyristor and brake S series 1200V / 25A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive
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7MBR25SC120
7MBR25SC120
design sine wave power inverter
thyristor 12V it 1A
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7MBR50SD120
Abstract: thyristor 12V it 1A thyristor inverter thyristor 25A igbt module 1200v 50a brake thyristor 12V 1A
Text: 7MBR50SD120 IGBT Modules PIM/Built-in converter with thyristor and brake S series 1200V / 50A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive
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7MBR50SD120
7MBR50SD120
thyristor 12V it 1A
thyristor inverter
thyristor 25A
igbt module 1200v 50a brake
thyristor 12V 1A
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LT 220 diode
Abstract: No abstract text available
Text: nixYS ' !. :-u r’ Thyristor Modules Thyristor/Diode Modules MCC 220 MCD 220 ^TRMS ^TAVM = 2 x 400 A = 2 x 250 A V RRM = 800 -1600 V v RSM V RRM v DSM v DRM V V Version 1 Version 1 900 1300 1500 1700 800 1200 1400 1600 MCC 220-08ÌO1 MCC 220-12io1 MCC 220-14io1
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220-12io1
220-14io1
220-16io1
4bflb22b
LT 220 diode
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Untitled
Abstract: No abstract text available
Text: 4bêfc>S2b OOOlbfi^ AMO H I X Y nixYs If i i 700 900 1300 1500 1700 > > > < < < Thyristor Modules Thyristor/Diode Modules 600 800 1200 1400 1600 MCC250 iTAV= 2 x 287 a MCD250 VRRM= 600-1600 V T ype Version 1 Version 1 M CC250*06io1 M CC250-08ÌO1 MCC2S0-121O1
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MCC250
MCD250
CC250
06io1
CC250-08Ã
MCC2S0-121O1
CC250-14Ã
CC250-16io1
MCD250-06k
MCD250-08JO1
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SKMT250
Abstract: SKKL D2101-2 SKKT250 SKKL250 semikron thyristor skkt 800 skkt250/16ge SKKT250/SKMT2501
Text: SEMIKRON V rsm V rrm dv/ V drm dt cr V V Itav (sin. 18C Tease = . . •) V/|iS 220 A (88 °C) 260 A (82 °C) 220 A (88 °C) 260 A (82 °C) 900 800 500 1300 1200 500 1300 1200 1000 1500 1400 1000 1700 1600 1000 1900 1800 1000 2100 2000 1000 2300 2200 1000
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SKKT210
SKMT2501'
SKKH210
Tamb0597
SKKT250
KT21010
fll3hb71
SKKL250
SKMT250
SKMT250
SKKL
D2101-2
SKKL250
semikron thyristor skkt 800
skkt250/16ge
SKKT250/SKMT2501
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Untitled
Abstract: No abstract text available
Text: inixYS £ — - . Thyristor Modules Thyristor/Diode Modules . . V DSM V DRM V V Version 1 B Version 8 B Version 8 B 900 1300 1500 1700 1900 800 1200 1400 1600 1800 MCC MCC MCC MCC MCC MCC MCC MCC MCC MCC MCD 72-08io8 B MCD 72-12io8 B MCD 72-14io8 B
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O-240
72-08io8
72-12io8
72-14io8
72-16i08
72-18io8B
72-08io1
72-12io1
72-14io1
72-16io1
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j45ac
Abstract: No abstract text available
Text: 4 b ô b 2 2 b GDGlbflS ITS « I X Y m xYS MCC220 iTAV= 2 X 250 A MCD220 v RRM= 600-1600 V Thyristor Modules Thyristor/Diode Modules Type V V Version 1 Version 1 | 700 900 1300 1500 1700 600 800 1200 1400 1600 MCC220*06io1 MCC220-08io1 MCC220-12io1 MCC220-14ÍO1
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MCC220
MCD220
06io1
MCC220-08io1
MCC220-12io1
MCC220-14Ã
MCC220-16Ã
MCD220-08Ã
j45ac
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SKKL250
Abstract: No abstract text available
Text: s e MIKRDN V rsm V rrm dv/ V drm dt cr 420 A | | 420 A | Itav (sin. 180 Tease = - • •) V/|iS 220 A (88 ° C ) 260 A (82 ° C ) 220 A (88 °C ) 260 A (82 ° C ) V V 900 1300 1300 1500 1700 1900 2100 2300 800 1200 1200 1400 1600 1800 2000 2200 SKKT 210/08 D
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SKKT210
SKKH210
SKKE260
SKKL250
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thyristor st 103
Abstract: mcc95 16 101 CD-951 MCC90 MCC95-12IO1 v06v MCR-SL-S-1/thyristor st 103
Text: 4bE D • 4bfib22b G D Q i n e S » I X V I X V S CORP D IX Y S T - z s Thyristor Modules Thyristor/Diode Modules 500 700 900 1300 1500 1700 >1 >i > V *» V om V 400 600 800 1200 1400 1600 MCC95 i TAV = 2 x 1 1 6 a MCD95 vRRM= 400- I 600 v Type Version 1 Version 8
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4bfib22b
MCC95
MCD95
CD95-04io8
CD95-06io8
CD95-08io8
CD95-12io8
CD95-14io8
CDd5-16io8
-06io1
thyristor st 103
mcc95 16 101
CD-951
MCC90
MCC95-12IO1
v06v
MCR-SL-S-1/thyristor st 103
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LT 0216 diode
Abstract: 20/LT 0216 diode Diode LT 410
Text: SGS-THOMSON ;[Li MM D(S MDS50 DIODE / THYRISTOR MODULE FEATURES • V qrm = V rrm UP TO 1200 V ■ lT(AV) = 35 A . HIGH SURGE CAPABILITY . INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) DESCRIPTION The MDS50 family are constitued of one rectifier diode and general purpose SCR. Suited for
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MDS50
MDS50
LT 0216 diode
20/LT 0216 diode
Diode LT 410
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semikron skMt 132
Abstract: KT-132 semikron skkt 90 thyristor T-50
Text: s e m ik r o n Vrsm Vrrm dv/dt cr V drm V V V/|is Itrms (maximum values for continuous operation) I 250 A | 220 A | 250 A 220 A 148 A SKKT Itav (sin. 18C Tease = 80 °C') 168 A 148 A 168 A SKKT SKKH 800 500 132/08 D 162/08 D 132/08 D 162/08 D 1300 1200 1000
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skkt 90
Abstract: KT25 KT213 mikron
Text: s e MIKROn V rsm V rrm Vdrm V V 900 dv/dt cr Itrms (maximum values for continuous operation) 370 A | 420 A j j 420 A Ita v (sin. 180; case —85 °C 250 A V/ns 230 A SKKT SKKT 800 500 213/08D 253/08 D 250 A SKKH 1200 1000 213/12 E 253/12 E 213/12 E 253/12 E
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425/3x360
465/3x400
SKKT213
SKKH213
KT253O60
skkt 90
KT25
KT213
mikron
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LT 0216 diode
Abstract: No abstract text available
Text: SGS-THOMSON MDS50 RiilD @lS il[L[l(gT[S©liD©i DIODE / THYRISTOR MODULE FEATURES • VDr m =V rrm UP TO 1200 V = 35A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(rmS ■ It(AV) DESCRIPTION The MDS50 family are constitued of one rectifier
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MDS50
MDS50
LT 0216 diode
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Untitled
Abstract: No abstract text available
Text: S EM IK R O N zurück V rsm V rrm V drm V V 1300 1200 SKNH 56/12 E 1500 1400 SKNH 56/14 E 1700 1600 SKNH 56/16 E 1900 1800 SKNH 56/18 E SEMIPACK 1 Modules with Thyristor and Free-Wheeling Diode ld P 3/120, Tamb = 45 °C 70 A Symbol Conditions SKNH 56 SKNH 91 1>
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