TI N CHANNEL MOSFET Search Results

Contextual Info: TD3002Y mgs5SS N- and P-Channel Half-Bridge MOSFETs_ SO PACKAGE PRODUCT SUMMARY V BR|DSS N-Channel 60 P-Channel -60 r°?r 5 N-souRCE n~ •d N-GATE o ; (A p -s o u r c e 0.41 10 r r P-GATE ~TI N-DRAIN ~n N-DRAIN ~T~| P-DRAIN ~T~I P-DRAIN

Contextual Info: OM6009SA OM6011SA OM6109SA 0M 6111S A OM6010SA OM6Q12SA QM6110SA OM6112SA POWER MOSFETS IN HERMETIC ISOLATED TO-254AA PACKAGE 100V T h ru 500V. Up To 22 Am p. N-Channel MOSFET In H e r m e ti c Metal Package, With O p ti o n a l Zener Gate C la m p P ro te ctio n

Contextual Info: OMDIOO OMD400 OMD200 OMD500 FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE 100V Thru 500V, Up To 25 Am p . N-Channel MOS FE T In H e r m e ti c Metal Package FEATURES • • • • Isolated Hermetic Metal Package Fast Switching Low R ds on Available Screened To MIL-S-19500, TX, TXV and S Levels

ufn1130

Contextual Info: POWER MOSFET TRANSISTORS 700 Volt, 3.5 Ohm N-Channel UFNU3° FEATU RES DESCRIPTION • • • • • • This new U nitrode power MOSFET utilizes the latest high voR&ge advanced technology The efficient design achieves a very low Rosion. a n d a & ig ti tranSe^rvductance.

Contextual Info: International Bgg Rectifier ' HEXFET Power MOSFET 4Ô55452 0014684 ^ TE R N A TI O N A L ÔTl • INR PD-9.919 _ IRF9620S RE C T IF IE R Surface Mount Available in Tape & Reel Dynamic dv/dt Rating P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements

pch 1275

Contextual Info: OM9326SC DUAL MOSFETS IN 5 PIN HERMETIC SIP PACKAGE, N & P CHANNEL C o m p l e m e n t a r y 100V N-C hanne l An d P-Channel Power M OS FE Ts In 5 Pin H e r m e ti c SIP Package FEATURES • • • • • L o w R DS on Fast Switching Easy To Heat Sink Small Isolated Hermetic Package

GF9926D

Contextual Info: GF9926D N-Channel Enhancement-Mode MOSFET Die VDS 20V RDS ON 30mΩ ID 6.0A H C N TRENFET oduct GE New Pr TM Chip Geometry Gate Source D G Physical Characteristics • Die size : 1800 X 1120µm (70.9 X 44.1 mils) • Metalization: Top: Al/Si/Cu Back: Ti/Ni/Ag

GF6968AD

Contextual Info: GF6968AD N-Channel Enhancement-Mode MOSFET Die VDS 20V RDS ON 30mΩ ID 6.0A H C N TRENFET oduct GE New Pr TM Chip Geometry Gate Source D G Physical Characteristics • Die size : 1800 X 1120µm (70.9 X 44.1 mils) • Metalization: Top: Al/Si/Cu Back: Ti/Ni/Ag

Contextual Info: In t 0 m O ti O n O I Provisional Data Sheet No. PD-9.1552 IOR Rectifier HEXFET POWER MOSFET IRFN440 N-CHANNEL Product Summan1 BVdss Part Number 500 Volt, 0.85Q HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi­

Contextual Info: GF6968AD N-Channel Enhancement-Mode MOSFET Die VDS 20V RDS ON 30mΩ ID 6.2A H C N TRENFET oduct GE New Pr TM Chip Geometry Gate Source D G Physical Characteristics • Die size : 1800 X 1120µm (70.9 X 44.1 mils) • Metalization: Top: Al/Si/Cu Back: Ti/Ni/Ag

Contextual Info: • S 1E M E N ! ÛS35bGS GGEGTBS ^ C3SIE6 SIEMENS AK TI EN GES ELLS CHAF M7E D 39-/5 SIMOPAC MOSFET Module BSM 191 F C Vbs = 1000 V /„ = 28 A ^DS(on) = 0.42 Q • • • • • • • Power module Single switch FREDFET N channel Enhancement mode

gs 1117 ax

Abstract: 2N6759
Contextual Info: H E D | 4f l5 S 4 S2 0 0 0 ^ 31 0 1 | Data Sheet No. PD-9.335D IN T ER N A TI O N A L R E C T I F I E R • T *- 3 f - ô 9 * INTERNATIONAL RECTIFIER HEXFETTRANSISTORS IOR JA NTXV2N676Ü *JAIMTX2NB7BO JEDEC REGISTERED N-CHANNEL POWER MOSFETs SINI6760 2N 6759

IRF530N

Abstract: IRF530ND
Contextual Info: IRF530ND N-Channel Enhancement-Mode MOSFET DIE TM Chip Geometry T E F N E G VDS 100V RDS ON 0.11Ω ID 17A ct u d ro P New D Source Gate G Physical Characteristics • Die size : 3890 X 1880 µm (153.1 X 74.0 mils) • Metalization: Top: Al/Si/Cu Back: Ti/Ni/Ag

"SOT-227 B" dimensions

Contextual Info: Advanced Technical Information HiPerFET Power MOSFETs IXFN 26N90 v DSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t ^D25 p DS on *rr Symbol Test Conditions Maximum Ratings Voss vDGR Tj = 25°C to 150°C Tj = 25CC to 150°C; RGS= 1 M ti

Contextual Info: Æi\tron PRODUCT DEVICES.INC. 1177 BLUE HERON BLVD. • RIVIERA BEACH. FLORIDA 33404 TEL: 407 848-4311 • TLX: 51-3435 • FAX: (407) 863-S94S N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER (Rgs=1.0Mo ) (1) Gate-Source Voltage Con ti nuous

IXTH110

Abstract: 851 36 RG 16 26 ixth110n25t IXTD110N25T-8W as001 A114B dimensions
Contextual Info: Preliminary Technical Information Trench Gate Power MOSFET Die IXTD110N25T-8W VDSS = 250V N-Channel Enhancement Mode Die Outline Notes: 1. Die Thickness: 200 ± 25 m 2. Die Size Tolerance: ± 50 μm 3. Top Bonding Pad Metal: 30 KÅ nominally thick Al 4. Back Metal: 3 layers of Ti, Ni & Au;

C-111

Abstract: ED-4701 ISL6205 ISL6205CB ISL6205CB-T ISL6223 TB363 TB379
Contextual Info: ISL6205 I GNS D ES W E T OR N DUC E D F TE P R O D N TI TU MME Data Sheet ECO E SUBS 208 R T L6 NO I BL S S I S PO TM November 2001 High Voltage Synchronous Rectified Buck MOSFET Driver The ISL6205 is a high-voltage, high-frequency, dual MOSFET driver specifically designed to drive two N-Channel

h20 mosfet

Contextual Info: HARRI S SENI COND SECTOR bôE D • 4302271 0DS111E HAFRFRIS 4TT ■ HAS PCF210W F2 1OD S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain - Tri-Metal AI-TI-NI

ZVN3310

Abstract: ZVN3310A ZVN3310B ZVN3310F F159
Contextual Info: büE D • T ti?GS7a QODVÔST 3DÔ ■ ZETB — ZETEX SEMICONDUCTORS N-channel enhancement mode vertical DMOS FET ZVN 3310 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent tem perature stability • High input impedance

Contextual Info: OM6516SC OM652QSC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 1000 Volt, 25 Am p. N- Channel IGBT In A H e rm e ti c Metal Package FEATURES Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability

Contextual Info: HARRIS SENICOND SECTOR t>AE D • M3D2271 005110 3 115 ■ HAS PCF14N05LW PCF14NÛ5LD H a r r is SEMICONDUCTOR January1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization • Gate and Source - Aluminum Silicon • Drain - Tri-Metal (Al-Ti-Ni

Contextual Info: PROCESS CP371 N-Channel MOSFET Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 55 x 32 MILS Die Thickness 7.5 MILS Gate Bonding Pad Area 7.3 x 7.3 MILS Source Bonding Pad Area 50 x 25 MILS Top Side Metalization Al - 40,000Å Back Side Metalization Ti/Ni/Ag - 1,000Å/3,000Å/10,000Å

HARRIS

Abstract: Harris Semiconductor
Contextual Info: HARRIS SENICOND SECTOR l- I A J R F R tfiE D • 4302B71 QOSllZb TÔ3 ■ HAS PCF50N05W PCF50N05D IS S E m , c o n d u c t o r N-Channel MOS Chip January 1993 Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum Silicon - Drain - Tri-Metal Al-Ti-Nl

rfp12n10

Contextual Info: HARRIS SEHICOND SECTOR böE D • 4302271 00S11G0 777 ■ HAFRFR1S UU PCF12N10W P^jF12N1 OEJ S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Die Features • HAS Passivated W • Contact Metallization - Gate and Source - Aluminum • Drain - Tri-Metal Al-Ti-Ni