TI414E Search Results
TI414E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: SAMSUNG ELECTRONICS INC b 7E » • 7 c b m 4 E KM64B258A GG175BQ IT T BiCMOS SRAM 65,536 WORD x 4 Bit With OE) High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns (max.) • Low Power Dissipation Standby (TTL) : 110mA (max.) |
OCR Scan |
KM64B258A GG175BQ 110mA KM64B258AJ-8: 185mA KM64B258AJ-10: 175mA KM64B258AJ-12: 165mA KM64B258AJ: |