TI77B Search Results

Contextual Info: HEWLETT-PACKARD/ CMPNTS blE D • 4 M 4 7 SA 4 0 0 0 ti77b 1Tb ■ H P A AT-00570 Up to 4 GHz General Purpose Silicon Bipolar Transistor W kim H E W LE T T PACKARD 70 mil Package Features • 16.0 dBm typical Pi dB at 2.0 GHz • 11.5 dB typical Gi dB at 2.0 GHz

Contextual Info: Philips Semi c on du ct or s Pr od uc t specification P o w e r M O S transistor G E N E R A L DE SCRIPTION N-channel enhancement mode field-effed power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BU2508D

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508D GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.

A7N transistor

Abstract: transistor a7n ti77 ec ubt
Contextual Info: Philips S em ic ondu c tors P ro d u ct specification T r e n c h M O S transistor Logic level FET PHT11N06LT G E N E R A L DESCRI PTIO N N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting.