TIAC Search Results

mt 1389 fe

Abstract: MX16C452 MX16C452QC mt 1389 se MCR 65-6 ior scr scr mcr 525 DTM 995 6C452 BW 3010 T
Contextual Info: tIACRONIX INC 34E D • Sbôfiôô2 DDG0G33 4 ■ M X 16 C 452 _ _ 1 V I A DUAL ASYNCHRONOUS COMMUNICAHONS ELEMENT DESCRIPTION T h e M X 1 6C452 Is a dual u n i v e r s a l asynch r o no u s receiver and transmitter w i t h a b i d i r e c t i o n a l

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-8SL Features • Low intermodulation distortion - I M 3 = -4 5 dB c a t Po = 2 8 .5 dBm , - Single carrier level • High pow er - P 1dB = 3 9 .5 dBm at 7.1 G H z to 7 .9 G H z • High efficiency - Tiacjd = 3 2 % at 7.1 G H z to 7 .9 G H z

thyristor ot 112

Abstract: AC15-F triac Motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M AC15FP S eries MAC15AFP Series T tiacs Silicon Bidirectional Thyristors . . . designed primarily for full-wave ac control applications, such as solid-state relays, motor controls, heating controls and power supplies; or wherever full-wave silicon

Contextual Info: Micrel's Family of Sequencing LDOs Gets You Back on Tiack M IC 68xxx Solves your Tracking, Sequencing and Ramp Control Requirem ents ASIC, FPGA and CPU manufacturers require complex and unique start-up protocols for loads on the system board. Micrel's MIC68xxx fam ily o f regulators are designed specifically to address

MQC3051

Abstract: MOC3050 CASE 730C-04 triac dc motor control circuits triac snubber varistor C3052 MOC3Q52 730F-04 MOC3052 APPLICATION CIRCUITS
Contextual Info: O rder this data sheet by M OC3050/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA & VDE TO ca UL CSA SETI S EM KO ® ® BS DEMKO NEMKO B AB T MOC3051 M O C 3052* [IFT = 15 mA Max] M OC3050 Series 600 V Random-Phase Opto T tiac Drivers [IFT = 10 mA Max] ‘ Motorola Preferred Device

Contextual Info: THS4011, THS4012 290-MHz LOW-DISTORTION HIGH-SPEED AMPLIFIERS SLOS216A – JUNE 1999 – FEBRUARY 2000 D D D D D D D D THS4011 D AND DGN PACKAGE TOP VIEW Very High Speed – 290 MHz Bandwidth (G = 1, –3 dB) – 310 V/µs Slew Rate – 37 ns Settling Time (0.1%)

Contextual Info: THS4011, THS4012 290ĆMHz LOWĆDISTORTION HIGHĆSPEED AMPLIFIERS SLOS216C − JUNE 1999 − MAY 2006 D 2 7 3 6 4 5 1OUT 1IN − 1IN + −VCC NULL VCC+ OUT NC 8 1 8 2 7 3 6 4 5 VCC+ 2OUT 2IN− 2IN+ NC − No internal connection Cross-section view showing PowerPAD option DGN

1ss nec

Contextual Info: PRELIM INARY DATA S H E E T MOS IN TEGRATED CIRCUIT MC-428LFF72 3.3 V OPERATION 8 M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, HYPER PAGE MODE EDO Description Th e M C-428LFF72 1« • 6.388,608 words by 72 bits dynam ic RAM m oduli on which 8 pieces of 84 M DRAM :

Contextual Info: S98WS256PD0-003 Stacked Multi-chip Product MCP 256 Mbit (16 M x 16-Bit) 1.8 V Burst Mode Flash Memory 128 Mb (8M x 16-Bit) 1.8 V CellularRAM Type 2, Burst Mode Data Sheet S98WS256PD0-003 Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

SA6954

Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to

Contextual Info: S29NS-R MirrorBit Flash Family S29NS01GR, S29NS512R, S29NS256R, S29NS128R 1024/512/256/128 Mb 64/32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory S29NS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Retired Product)

S98WS512

Contextual Info: S98WS512PE0FW005 Stacked Multi-chip Product MCP 512 Mbit (32M x 16-Bit) Stacked Burst Mode, Simultaneous Read/Write Flash Memory with 256 Mbit (16M x 16-bit) Mobile SDRAM on Shared Bus S98WS512PE0FW005 Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: HD68230-PI/T Parallel Interface Timer -P R E L IM IN A R Y The HD68230 Parallel Interface/Timer provides versatile double buffered parallel interfaces and an operating system oriented timer to HD68000 systems. The parallel interfaces operate in

potentiostat

Abstract: Carbon Monoxide SENSOR CIRCUIT DIAGRAM L9100 simple blood glucose meter circuit diagram L91000 op amp in potentiostat gas Smart meter chemical sensor circuit diagram of blood glucose meter LMP9100
Contextual Info: LMP91000 Sensor AFE System: Configurable AFE Potentiostat for Low-Power Chemical Sensing Applications General Description Features The LMP91000 is a programmable Analog Front End AFE for use in micro-power electrochemical sensing applications. It provides a complete signal path solution between a sensor

MBM29BS64LF

Abstract: MBM29BS64LF-18 MBM29BT64LF-18
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20916-1E BURST MODE FLASH MEMORY CMOS 64M 4M x 16 BIT MBM29BS/BT64LF-18/25 • GENERAL DESCRIPTION The MBM29BS/BT64LF is a 64M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 4M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed

Murata GJ8 capacitor

Contextual Info: Chip Monolithic Ceramic Capacitors for Automotive !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.

MAX163

Abstract: MAX164 MAX167 MAX167ACNG MAX167ACWG MAX167BCNG MAX167BCWG MAX167CCNG
Contextual Info: >kiyjxi>ki CMOS 12-Bit A /D C onverters With Track-and-Hold _ Features The MAX163, MAX164, and MAX167 are com plete CM O S sam pling 12-bit a n a lo g -to -d ig ita l converters ADC s that co m b in e an o n -ch ip tra ck-a n d -h o ld and

2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

Abstract: Analysis of the Sallen-Key architecture THS3001 THS4001 THS4011 THS4011CD THS4012
Contextual Info: THS4011, THS4012 290-MHz LOW-DISTORTION HIGH-SPEED AMPLIFIERS SLOS216 – JUNE 1999 D D D D D D D D THS4011 D AND DGN† PACKAGE TOP VIEW Very High Speed – 290 MHz Bandwidth (G = 1, –3 dB) – 310 V/µs Slew Rate – 37 ns Settling Time (0.1%) Very Low Distortion

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Contextual Info: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K

LD113

Contextual Info: Advance Data Sheet October 1998 microelectronics group Lucent Technologies Bell Labs Innovations Ambassador T8100A, T8102, and T8105 H.100/H.110 Interfaces and Time-Slot Interchangers 1 Product Overview • Two independently programmable groups of up to

sim 300 gsm module VR 0511

Abstract: nf schaltungen PEB 3164 pdsp 2113 halbleiter datenbuch star delta timer siemens siemens cpu 216-2 Siemens Optoelectronic ITT Semiconductors siemens fl 232 v7
Contextual Info: SIEMENS ICs for Communications DSP Oriented PBX Controller DOC PEB 20560 Version 2.1 Contents Overview Functional Block Description Operational Description DSP Core OAK Description of Registers Applications Electrical Characteristics Ordering Information and Mechanical Data

S29WS256N

Abstract: S71WS512NE0BFWZZ
Contextual Info: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20913-2E BURST MODE FLASH MEMORY CMOS 32M 2M x 16 BIT MBM29BS/BT32LF 18/25 • GENERAL DESCRIPTION The MBM29BS/BT32LF is a 32M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 2M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed

a42 a331

Abstract: omap 310 TMS320C55x CSL USB VLYNQ C6000 OMAP5912 SPRU375 TMS320C6000 stt a227 a44 a331
Contextual Info: OMAP5912 ARM Chip Support Library Reference Guide Literature Number: SPRU816 August 2004 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any