TIBS3T31 Search Results

PHILIPS BDX64

Abstract: BDX64
Contextual Info: 11 tibS3T31 DOlTIb? 1 • E5E D N AMER P H IL IP S /D IS C R E T E BDX64; 64A BDX64B; 64C J V r - 3 S - 3 / SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. N-P-N complements are BDX65, BDX65A,

potentiometer 502 TJ

Abstract: BLF276 mra843
Contextual Info: Philips Semiconductors 00300GÔ □□□ I A P X eliminary specification BLF276 VHF power MOS transistor N AMER PHILIPS/DISCRETE LIE J> PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability DESCRIPTION Silicon N-channel enhancement

Contextual Info: N APIER PHILIPS/DISCRETE h'lE D • t.bSB'iai 0026474 632 I IAPX BUV28F BUV28AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope w ith electrically isolated mounting base, intended fo r use in converters, inverters, switching regulators, m otor control

Contextual Info: 4N25 4N25A 4N26 4N27 4N28 OPTOCOUPLERS This product range is one o f the industrial standards applied in the market. The current transfer ratio, isolation voltage and low saturation voltage com ply w ith the specifications o f the main part o f the optocoupler market.

ha 13627

Abstract: transistor equivalent 0107 NA ISC 9809 code n42 MS801-4 data ic ha 13627 TF DKL 1307 TRANSISTOR equivalent BFG520 BFR520
Contextual Info: DhmM o • w . ■ feb53*i31 Ga24TflT 10T B A P X £IilJjP « ® 2 IIH £2 2 ii£ i2 £S _ Product specification N AMER PHILIPS/DISCRETE L7E ]>“ NPN 9 GHz wideband transistor £ BFG520; BFG520/X; BFG520/XR FEATURES • High power gain • Low noise figure