TIC 106B Search Results

TIC47

Abstract: TIC44 thyristor tic 126 TIC45 THYRISTOR TIC45 TIC46 TIC41 TIC45 AGK tic 260 TIC44 AGK
Contextual Info: TYPES TIC 44, TIC 45. TIC46, TIC47 P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTORS S I L E C T t T H Y R IS T O R S t 600 m A D C • 30 thru 200 V O L T S Rugged, One-Piece Construction with Standard TO -18 100-mil Pin-Circle Configuration mechanical data

su kam inverter circuits

Contextual Info: MC68HC11G5 TECHNICAL DATA MC68HC11G5 MC68HC11G7 MC68HC711G5 TECHNICAL DATA W m o to ro la fö M O T O R O L A MC68HC11G5 MC68HC11G7 MC68HC711G5 High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcontroller Unit M o to ro la re s e rv e s th e rig h t to m a k e c h a n g e s w ith o u t fu rth e r n o tic e to a n y p ro d u c ts h e re in to im p ro v e re lia b ility , fu n c tio n o r d e s ig n .

tic 1060

Abstract: TIC 106b
Contextual Info: DM-106B S O N Y . Magneto-Resistance Element Description The D M -1 0 6 B is a highly sensitive m agnetoresistance element com posed o f an evaporated ferrom agnetic alloy on a silicon substrate. The ele­ ment can be used fo r autom atic shut o ff o f tape

TIC 160

Abstract: thyristor tic 126 2N5064 AGT Thyristor tic 120 TIC64 TIC 160 D TIC45 AGK TIC106B Thyristor TO39
Contextual Info: TYPES 2N5060 THRU 2N5064, TIC60 THRU TIC64 P-IIM-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS S IL E C T t T H Y R IS T O R S * 8 0 0 m A DC • 30 thru 20 0 V O LT S mechanical data These thyristors are encapsulated in a plastic compound specifically designed for this purpose, using a highly

tic47

Abstract: TIC44 TIC45 TIC46
Contextual Info: TYPES TIC44, TIC45. TIC46, TIC47 P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTORS a•oo -j C< SILECTt THYRISTO RSÎ 600 mA DC • 30 thru 200 VOLTS r r- m >m <« OHH cnZO Rugged, One-Piece Construction with Standard TO-18 100-mil Pin-Circle Configuration

TESLA transistor

Abstract: magnetic flux density for different material TESLA Manufacturer 106B TL176C tesla switch
Contextual Info: LINEAR INTEGRATED CIRCUITS TYPE TL176C NORMALLY OFF SILICON HALL-EFFECT SWITCH B U L L E T I N N O . D L -S 1 2 7 2 9 , O C T O B E R 1 9 7 9 • Magnetic-Field-Sensing Hall-Effect Input • O n-O ff Hysteresis • Small Size • Solid-State Technology •

itt rt-a

Abstract: itt rotary switch 14 positions itt cannon GS rotary coded switch 12 positions itt rta 103B03 108B08 itt rotary switch bcd coded itt industries rotary k itt rta switch
Contextual Info: C&K RTA Series 1-4 Poles Coded Rotary Switches Features/Benefits Typical Applications • PCB or hand soldering versions • Appliances • Bushing mounting • Electronic alarm systems • Multiple poles • Medical • Decimal and hexadecimal codes • Building automation

scr 106B

Abstract: SCR C-106B
Contextual Info: LINEAR INTEGRATED CIRCUITS TYPE TL175C SILICON HALL-EFFECT LATCH B U L L E T I N N O . D L -S 1 2 7 3 2 , D E C E M B E R 1 9 7 9 LP S ILE C T* PACKAGE • Magnetic-Field-Sensing Hall-Effect Inp u t • O n-O ff Hysteresis Assures Latched O utput • Small Size

Contextual Info: INTRODUCTION PLASTIC ENCAPSULATED TRAN SISTO RS TRI ACS AND THYRISTO RS This catalogue provides technical descriptions and specifications on Plastic Power Semiconductors manufactured by Texas Instruments. From the earliest days o f transistors Sem iconductor C ircuit Designers have

Contextual Info: LINEAR INTEGRATED CIRCUITS TYPE TL176C NORMALLY OFF SILICON HALL-EFFECT SWITCH B U L L E T I N N O . D L -S 1 2 7 2 9 , O C T O B E R 1 9 7 9 • Magnetic-Field-Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Solid-State Technology • Open-Collector Output

Contextual Info: +105°C Radial Lead § & Bi-Polar Aluminum Electrolytic Capacitors ! , * . j J F o r s p e a k e r n e tw ork s an d p o l a r it y r e v e r s in g a p p l i c a t i o n s FEA T U R E S • ■ ■ Excellent Frequency Stability

scr 106 C

Abstract: scr c106y scr C106D scr 106B C106Y scr c 106 m scr 6 Ampere s106b1 SCR 214 SCR 106 B
Contextual Info: HUTSON INDUSTRIES ^ _ DE~| 4L.4M700 GOODSaS' 3 "r'HUTSON"INDUSTRIES pmmm:A a m p e re .< -• . ^ : SENSITIVE GATE SCR’s ^^>0^jCh2O2,\;: ¿: •/ • 200juA DC Gate-Trigger Current 500juA PC Gate-Trigger Current The Hutson line of senstive gate SCR's is

TIS37

Abstract: TIS137 TIS38
Contextual Info: TYPES TIS37, TIS38. * P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 5 8 0 , N O V E M B E R 1 9 7 1 - R E V IS E D M A R C H 1 9 7 3 SI L E C T t T R A N S IS T O R S Î REC O M M EN DED AS LOW-NOISE DESIG N REPLACEM ENTS FOR G E R M A N IU M D R IF T TR AN SISTO RS IN:

a5t4123

Abstract: 5t41
Contextual Info: TYPES 2N4123, 2N4124, A5T4123. A5T4124 N-P-N SILICON TRANSISTORS Î B U L L E T IN N O . D L -S 7 3 1 1 4 7 1 , N O V E M B E R 1 9 7 1 - R E V I S E D M A R C H 1973 S IL E C T t T R A N S IS T O R S * D E S IG N E D F O R G E N E R A L PUR PO SE S A T U R A T E D S W IT C H IN G

2N404

Abstract: MPS404 2n404a a5t404
Contextual Info: TYPES A5T404, A5T404A, A8T404, A8T404A P-N-P SILICON TRANSISTORS _B U L L E T I N N O . O L -S 7 3 1 1 9 7 9 , M A R C H 1973 SILECTt TRANSISTORS* FOR LOW-COST REPLACEMENT OF GERMANIUM 2N404, 2N404A • A5T404, A5T404A Have Standard TO-18 100-mil Pin-Circle Configuration

2N3645

Abstract: A5T2907 A5T3644 2n3644
Contextual Info: TYPES A5T2907, '¡15112 P-N-P SILIC O N TR A N S IS TO R S B U L L E T IN N O . D L -S 7 3 1 1 3 1 8 , M A R C H 1 9 7 0 - R E V IS E D M A R C H 1 9 7 3 I I SI L E C T t TRANSISTORS I DESIGNED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND GENERAL PURPOSE AMPLIFIER APPLICATIONS

a5t3496

Contextual Info: TYPES A5T3496, A5T3497 P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L-S 731 1 9 5 3 , M A R C H 1973 S IL E C T t TRA N SISTO R SÎ FOR H IG H -VO LTAG E, MEDIUM-SPEED, G EN E R A L PURPOSE APPLICATIONS • High V B R C EO • ••80 V (A5T3496), 120 V (A5T3497)

A5T3638A

Abstract: a5t3638
Contextual Info: TY P ES A5T3638, A5T3638A P-N-P SILIC ON TRANSISTO R S B U L L E T I N N O . O L -S 7 3 1 1 9 6 2 , M A R C H 1 9 7 3 S IL E C T t T R A N SISTO R S* FOR H IG H -C U R R E N T, M EDIUM -SPEED SW ITCH IN G A PPLICATIO N S • High Collecter C u rren t. . . 500 mA

A5T4125

Contextual Info: TYPES 2N4125, 2N4126, A5T4125, A5T4126 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L - S 731 1 4 7 2 , J U L Y 1 9 7 1 - R E V lS E D M A R C H 1973 S IL E C T t T R A N S IS T O R S Î FOR G E N E R A L PURPOSE SA TU R A TED -SW ITC H IN G A N D A M P L IF IE R APPLIC A TIO N S

A5T4028

Abstract: purpose of IC 4027 5T4029
Contextual Info: TYPES A5T4026 TH R U A5T4029, A8T4026 TH R U A8T4029 P-N-P S ILIC O N TR A N S IS TO R S B U L L E T IN N O . D L -S 7 3 1 2 0 0 2 , M A R C H 1 9 7 3 SILECTt TRANSISTORS* FOR GENERAL PURPOSE APPLICATIONS • • • High V BR CEO •■80 V Min (A5T4027, A5T4029, A8T4027, A8T4029)

2N3303

Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
Contextual Info: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any

2n3820 transistor

Abstract: TIC 106b 2n3820
Contextual Info: TYPE 2N3820 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 6 8 7 9 4 7 , A U G U S T 1 9 6 5 -R E V IS E D J U L Y 1968 SILECTf FIELD-EFFECT TRANSISTOR * For Industrial and Consumer Small-Signal Applications m e c h a n ic a l d a t a

chn 834 TRANSISTOR

Abstract: High-Power 202A MOSFET CA3458T 40468A 3N128 equivalent ta7657 DIODE chn 548 TA7374 Thyristor chn 542 cd 40938
Contextual Info: RCA Solid State Total Data Service System The RCA Solid State DATABOOKS are supplemented throughout the year by a comprehensive data service system that keeps you aware of all new device announcements and lets you obtain as much or as little product information as

2N5526

Abstract: 2N5525 data 2n5525
Contextual Info: TYPES 2N5525, 2N5526 N-P-N DARLINGTON-CONNECTED SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 2 1 1 5 5 3 , J A N U A R Y 1972 SILECTt TRANSISTORSt TWO N-P-N TRIODES INTERNALLY CONNECTED IN DARLINGTON CONFIGURATION 1mechanical data These transistors are encapsulated in a plastic com pound specifically designed fo r this purpose, using a highly