TIC 136 D Search Results

transistor BD 141

Contextual Info: 25C D • aaasbos 0 0 0 4 3 3 7 3 ISIEG r TW 3-/7 ÖA337 PIMP Silicon Transistors D SIEMENS AKTIENGESELLSCHAF — BD 136 BD 138 BD 140 For AF d river and o u tp u t stages of m e d iu m p erform ance BD 136, BD 138, and BD 1 4 0 are epitaxial PNP silicon planar transistors in TO 126

CPT60050

Abstract: CPT60060
Contextual Info: S c h o t t k y Powerl Vloc c V V D" f60050 Baseplate A=Common Anode Baseplate Common Cathode u t" 1 1 H h 1 1 -1 — / w F u \ — r , I- t °-N - _ L ' - I il- I Baseplate D=Doubler Notes: Baseplate: Nickel plated copper Microsemi Catalog Number Working Peak

301CNQ035

Abstract: 301CNQ040 301CNQ045 CPT30035 CPT30040 CPT30045 CPT30050 MBRP30045CT
Contextual Info: S c h o ttk y Powerl vi oc D • c D ” r30035 ¥ ¥ Baseplate A=Common Anode Baseplate Common Cathode u *"1 I I H -I— I / u H h °-N—j —H -° I c \l I \ h - 1— 1- Baseplate D=Doubler -I Notes: Baseplate: Nickel plated copper Microsemi Catalog Number

FST19035

Abstract: FST19040 FST19045 FST19050
Contextual Info: Low Vf S c h o tt k y Powermod FST19035 - FST19050 Dim. Inches Max. Min. 1 2 3 Common Cathode m 1 2 3 A=Common Anode 0 6 0 1 2 3 D=Doubler Notes: Baseplate: Nickel plated copper; electrically isolated Pins: Nickel plated copper Microsemi Catalog Number Working Peak

CPT60050

Abstract: CPT60060
Contextual Info: Schottky PowerMod CPT60050 - ¥ Baseplate A=Common Anode V 1 -1 1 H U 1 “ I- h r Baseplate Common Cathode 1 i i F u M f- i , — r n -|A [- ° N | W ° Baseplate D=Doubler CPT60060 Dim . In ch es Min. A B C E F G H N Q R U V W Max. -3.630 0.700

301CNQ035

Abstract: 301CNQ040 301CNQ045 CPT30035 CPT30040 CPT30045 CPT30050 MBRP30045CT
Contextual Info: Schottky PowerMod CPT30035 V Baseplate A=Common Anode V Baseplate Common Cathode u — 1 / T É | - r 1 \ ! / '\l °N | W ° 1 1 c ! T T E Baseplate D=Doubler Notes: Baseplate: Nickel plated copper Microsemi Catalog Number Industry P art Number Working Peak

R3003

Abstract: FST30035 FST30040 FST30045 FST30050
Contextual Info: S c h o tt k y Pow erMcx FS1f30035 FS1r30050 Dim. Inches V Baseplate A=Common Anode V Baseplate Common Cathode 1/4-20UNC with Captive Lockwasher °N | W ° Max. -1.350 0.700 -3.140 -0.280 2.450 1.400 0.800 0.625 3.160 3.650 0.300 Min. _ 34.29

Contextual Info: & 9-BIT MAGNITUDE COMPARATOR SYNERGY SEMICONDUCTOR DESCRIPTION FEATURES • 1400 ps Max. Propagation Delay. The SY10E/100E/101E166 is a 9-bit magnitude comparator designed for use in new, high performance ECL systems. The E166 compares the binary value of two 9-bit words and indicates

FPT131

Abstract: FPT100A FPT100 FPT100B FPT101 FPT110 FPT110A FPT110B FPT120 FPT120A
Contextual Info: 1-13 Phototransistors 1 Min T yp <CE it VCE = 5 .0 V mA M in T yp M ax 30 50 H = 5.0 m W /cm 2 0.2 1.4 VCEO I q = 1.0 mA V D e v ic e No. FPT100 FPT100A FPT100B FPT101 FPT110 D e s c rip tio n Plastic, Dome Lens General Purpose VCE(sat) H = 2 0 m W /c m 2 t f / t ,

TIC 138

Abstract: anzac termination insensitive mixer ts.228 tic 208 tic 136 tic 122 tic 234
Contextual Info: TABLE OF CONTENTS Cantenis G e n e ra l page Product Section F in d e r. 1 Company In tro d u c tio n . 4

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC39V37 4 2 A 3 .7 —4.2G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 3 9 V 3 7 4 2 A is a n in te m a lly im p e d a n c e -m a tc h e d G aA s p o w e r F E T especially designed fo r use in 3 .7 ~ 4 .2

Contextual Info: SANKEN ELECTRIC CO LTD 55E D 7^^0741 GÜDIBIM TT5 « S A K J vj LA4070 Silicon PNP Epitaxial Planar Darlington •Maximum Ratings Hem T a = 25°C Symbol Ratings Unit C o lle c to r-to -B a s e V o lta g e VCBO -1 0 0 V C o lle c to r-to -E m itte r V o lta g e

Contextual Info: O K I Semiconductor MSM38S0000/MSM98S000 0.8|im Mixed 3-V/5-V Sea of Gates and Customer Structured Arrays DESCRIPTION OKI's 0.8 tm ASIC products, specially designed for mixed 3-V /5-V applications, are now available in both Sea Of Gates (SOG and Customer Structured Array (CSA) architectures. Both the SOG-based MSM38S

SBR50100PF

Abstract: SBR5090PF
Contextual Info: 50 Am o Schottky Rectifier SBR5090P - SBR501OOPF Dim. Inches Minimum A B C D E F G Microsemi Catalog Number Working Peak Reverse Voltage SBR5090PF* SBR50100PF* 90V 100V Millimeter Maximum Minimum .590 .499 1.15 .320 .090 .047 .020 .630 .510 1.40 .350 .096

Contextual Info: , Ltna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF342 SILICON POWER NPN TRANSISTOR DESCRIPTION: PACKAGE STYLE TO-220AB MRF342 is designed for VHP amplifier applications operating to 150MHz.

S30760

Abstract: R30720 R30740 R30760 S30720 S30740
Contextual Info: Silicon Power Rectifier S /R 3 0 7 Series Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 / 4 - 2 8 2. Full threads within 2 1 /2 threads 3. Standard polarity: Stud is cathode Reverse polarity. Stud is anode P A B C D E F G H J K M

Contextual Info: Silicon Power Rectifier S/R307 Series Dim. Inches if1II1 f/r-æ-i - -1 Ï ' - C- 1 J h r>iO i K J _L L Jü il J Millimeter Minimum Maximum Minimum Maximum Notes i n i A F t ' E Notes: 1. 1 /4 - 2 8 2. Full threads within 2 1 /2 threads 3. Standard polarity;

Contextual Info: TM S 3126, 3127, 3128, 3129, 3130, 3131, 3132 LC. NC D U A L 96-, 100-, 128-, 132-, 133-, 136-, 144-BIT STATIC S H IFT R EG ISTER S M OS LSI B U L L E T I N N O . D L -S 7 5 1 2 2 6 3 , M A Y 1 9 7 5 D C to 2 .5 -M H z Operation TO -99 H E R M E T IC A L L Y S E A LE D PACKAGE

S30760

Abstract: R307 530740 R30720 R30740 R30760 S30720 S30740
Contextual Info: Silicon Power Rectifier S/ R 3 0 7 Seríes Dim Inches Millimeter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 /4 - 2 8 2. Full threads within 2 1 /2 threads 3. Standard polarity: Stud is cathode Reverse polarity: Stud is anode p A B C D E F G H J K M

5817SMG

Abstract: 5818SMG 5819SMG D0215AA
Contextual Info: 1 Amp Schottky Rectifier 5817SMG - 5819SMG CATHODE BAR Dim. Inches Minimum M illim e te r Maximum Minimum Maximum Notes □ > -o - 1 1 .081 .160 .130 .077 .234 A B C D E 1 » m -O h .087 .180 .155 .104 .256 2.06 4.06 3.30 1.95 5.95 2.21 4.57 3.94 2.64 6.50

transistor bd 126

Abstract: bd 136 BD 138 bo 135 hi-fi bd bf AMPLIFICATEUR BD136
Contextual Info: B D 136 B D 138 PNP SILICON TRANSISTORS, PLANAR T R A N S IS T O R S P N P S IL IC IU M , P L A N A R Compì, of BD 135, 6D 137 PRELIM INARY DATA N O T IC E P R E L I M IN A I R E These transistors are intended for a wide variety of medium power complementary symetry appli­

D0215AA

Abstract: 5817SMG 5818SMG 5819SMG
Contextual Info: 1 Amp Schottky Rectifier 5817SMG - 5819SMG -CATHODE BAR Dim. Inches • 3> I - o - I Minimum .081 .160 .130 .077 .234 A B C D E — D>K M illim eter Maximum Minimum .087 .180 .155 .104 .256 Maximum Notes 2.06 4.06 3.30 1.95 5.95 2.21 4.57 3.94 2.64 6.50 D0215AA

B66276-B1011-T1

Abstract: tic 122 tic 272 B66274-B1012-T1 B66274B1002T1 B66278-B1001-T1 B66278 B66278-B1002-T1 B66278B2001 B66272J1013T1
Contextual Info: EC Cores Example of an assem bly set Yoke a - Sheet-steel screw FEK 0 0 r-X Mounting dimensions of the assembly set mm C o r e ty p e L e n g th x w id th x h e ig h t 1'f E C 35 47 E C 41 5 2 .5 x 4 7 , 5 x 4 2 4 7 .5 x 4 2 x 44

7400N

Abstract: 2 input nand gate 24v D1113 FJH131 FJHI36 6400N FIH131 FJH131A FJH136 2 input nor gate 24v
Contextual Info: T.T.L. QUADRUPLE 2-INPUT NAND GATES Correspond to 74 Series types 7400N, 6400N FIH13 1 FJHI3IA FJHI36 T ENTATIVE DATA T h e s e d e v ic e s a r e t r a n s i s t o r - t r a n s i s t o r lo g ic q u a d ru p le 2 -in p u t NAND g a te s in th e F J s e r i e s of in te g r a te d c i r c u i t s . T h e F JH 131 c o r r e s p o n d s to '7 4 S e r i e s 't y p e 7400N,