TIC 216 D Search Results

transistor C635

Abstract: KC 215 ci 7440 C635 case sot30 Q62702-C634-S2 BCX74-16 BCX73 BCX74 SOT-30
Contextual Info: BCX73, BCX74 NPN Transistors for AF driver and output stages as well as switching applications B C X 73 and BCX 74 are epitaxial NPN silicon planar transistors in a plastic package strip-line design 10 A 3 DIN 4 1 8 6 8 (S O T -3 0 ). The transistors are designed for

TIC 216 D

Contextual Info: ¥ Carbon composition film single turn rotary potentiometers Series 16 Ordering code no.: 01 016 0 . Type 16 Basic design: wire tag terminations d e t a il X Technical data R a te d re s is ta n c e ra n g e : R e s is ta n c e to le ra n c e : L a w re s is ta n c e ta p e r :

Synertek

Abstract: A10C SYC2168 SYC2168-3 SYD2168
Contextual Info: S ^ æ SY2168 r te k . 4096 x 4 Static Random Access Memory ADVANCED INFORMATION Features • • • • • 55 ns M a xim u m Access Tim e No Clocks or Strobes Required A u to m a tic CË P ow er D ow n Id entical Cycle and Access Tim es S ingle + 5 V Supply {±10%

Contextual Info: Programmable Clock Generator AD730 ANALOG DEVICES □ O ther frequencies may be personalized on an AD730 using the following algorithm: FEATURES 16 S electable Frequencies 216 MHz m ax ECL O u tp u t 54 M Hz m ax TTL O u tp u t L o w O u tp u t J itte r L o w Cost

30h80

Abstract: 1S1115 1S1116 SWH-08 SWH-10 SWH2-16 SWH2-20 SWH2-25ED
Contextual Info: Í31 S IL IC O N H IG H V O L T A G E R E C T IF Y IN G D IO D E S • 8 kV~25kV SWH 2 • 300~500mA l T ORIGIN ELECTRIC CO t . SñE LTD , • D 2 . 8 k V ~ 2 5 k V t ' > 'J - X '-fb ? t l X Í í '■i M I R L l (T a = 25°C ) C h a ra c te ris tic s (T a = 25 °C

Contextual Info: BTE D P0U1EREX INC • TETMbSl 00DMS2Ö b HIPRX JBF245A1 JBF250Ä1 fOMEHSr Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 41 2 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 r-z*\'°io Tentative

Contextual Info: LMU16/216 16 x 16-bit Parallel Multiplier DEVICES IN C O R P O R A T E FEATURES □ 4 5 n s W o rst-C a se M u ltip ly T im e □ L ow P o w e r C M O S T e c h n o lo g y Ü R e p la c e s T R W M P Y 0 1 6 /T M C 2 1 6 , C y p re s s C Y 7 C 5 1 6 , ID T 7 2 1 6 L , a n d

JBF225A1

Abstract: A1659
Contextual Info: POWE RE X INC m /w 3TE D E x • 7ST4b21 G00MS2M T * P R X _ JBF230À1 Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powemx Europe, S.A., 426 Avenue 6. Durand, BP107, 72003 Le Mans, Fiance (43) 41.14.14 Quad-Mos FETMOD

Contextual Info: T1 % 5mm MULTICHIP LEDs 6-C H IP 160* W IDE ANGLE ILLUMINATORS L 206 FEATU RES HI-SHOCK / VIBRATION RESISTANT EXCELLENT FOR BACKLIGHTING IN LIGHTED PUSH-BUTTON SWITCHES LCD DISPLAYS AND M ORE. • HI-FLUX, HI-INTENSITY ILLUM. • EXTRA WIDE ANGLE-160* VIEWING

Contextual Info: O K I Semiconductor MSM38S0000/MSM98S000 0.8|im Mixed 3-V/5-V Sea of Gates and Customer Structured Arrays DESCRIPTION OKI's 0.8 tm ASIC products, specially designed for mixed 3-V /5-V applications, are now available in both Sea Of Gates (SOG and Customer Structured Array (CSA) architectures. Both the SOG-based MSM38S

Contextual Info: 2 . S c h e m a tic : 1. M e c h a n ic a l: O- 2.50 2.50 12. 30±0.50 O o O- IN LT> d 9 L3N 6dO — 50 MMÀÀ CNJ — o 4.50 ID SdlAIJX | — O C\j 3. ELECTRICAL SPECIFICATIONS: 25°C 3.50 3.50 - - OCL: 0.9uH±30% @100KHz, 0.25V, 0DC CURRENT: 21.6 ADC Max, OCL DROP BY 15% Max

Contextual Info: a AM E N D M E N T Advanced Micro Devices Am26LS29 Quad Three-State Single Ended RS-423 Line Driver Publication: Interface Products, PID #04599C Page 4 • Delete “SC" from Valid Combinations Page 5 For Operating Ranges for military paragraph ■ Change Supply Voltage Vcc from +4.75 V to +4.5 V

LMU16D

Contextual Info: LMU16/216 16 x 16-bit Parallel M u ltip lier D E V IC E S IN G Q R P O R A T F i FEATURES □ 45 n s W o rs t-C a s e M u ltip ly T im e □ L o w P o w e r C M O S T e c h n o lo g y □ R e p la c e s T R W M P Y 0 1 6 /T M C 2 1 6 , C y p re ss C Y 7 C 5 1 6 , ID T 7 2 1 6 L , and

Contextual Info: T em ic siiiconi«_ SÌ4435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V -3 0 *ì)S(on) (ß ) I d (A) 0.02 @ Vos = -1 0 V ±8.0 0.035 @ Vos = -4.5 V ±6.0 ÜJ SO-8 S (X s [IT s d ~7~| D ~6~] D G XI D ~~8~] D [~4~ fm Top View

Contextual Info: □ I X Y Advanced Technical Information S High Voltage BIMOSFET Monolithic Bipolar MOS Transistor VCES IXBH 9N140 IXBH 9N160 ^C 25 V C E sa t N -C hannel, E n ha n ce m e n t M ode tfi 1400/1600 V 9A 5.8 V typ. 40 ns T O -2 4 7 A D S ym bo l C o n d itio n s

K241

Abstract: k271 0
Contextual Info: F N R - D ÍS « i¿ 2 S 1 l i Pfi f! 1* t í if FNR F N R -D MODULE ALTERNATIVE POWER ARRESTER PROCTECTOR • DIMENSION _4£L EXPLANATIO N OF PART NUM BERS F I ^ S I iî î S L NR D I 16 C IR C U IT CONNECTION - L íüííÉ SI Protected c iru it N - « Æ ig iS S I

Contextual Info: SN54BCT25244, SN74BCT25244 25-Q OCTAL BUFFERS/DRIVERS WITH 3-STATE OUTPUTS SCBS064A - JUNE 1990 - REVISED NOVEMBER 1993 • State-of-the-Art BiCMOS Design Significantly Reduces Ic cz • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds

Synertek

Abstract: SYC2169 SYC2169-3 SYD2169 SYD2169-3
Contextual Info: SY2169 4096 x 4 Static Random Access M em ory ADVANCED INFORMATION Features • • • • • 5 0 n s M a x im u m A d d re ss A cce ss Tim es Fully S ta tic O peration: No C locks or S tro b e s R equired Fast C hip S e le ct A cce ss Tim e: 4 0 ns Max.

Contextual Info: 2 1 Hand Held Instrument 1593J Top View of Assembly SECTION A-A (Side View Inside Assembly) 55.06 [2.168] (Inlay Width) A n 5.50 n 5.49 [.217] (Top Assem Boss n) [.216] (Bottom Assem Boss n) B Detail View of PCB Boss 55.06 [2.168] (Inlay Length) 66.25 [2.608]

BLW87

Contextual Info: Qs.is.s.u £s,mL- -onau.etoi O' , U na. c/ 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLW87 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLW87 is Designed for Class C, 12.5 V High Band Applications

Contextual Info: THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO POSITRONIC AND IT'S SUBSIDIARIES. POSITRONIC BELIEVES THE DATA ON THIS DRAWING TO BE RELIABLE, SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION

siemens ha 8000

Abstract: BSM 214 A siemens igbt BSM 50 gb 100 d 235L C160 siemens igbt BSM 50 gb 120 d
Contextual Info: bGE D • ôS3SbDS 0QM5ÔMÛ Ö37 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF T ’ Z d r C IGBT Module Preliminary Data ft BSM50GB120D BSM50GAL120D = V CE 1200 V / c = 2 x 70 A at T c = 25 C / c = 2 x 50 A at 80 C Tc = • • • • • Power module H alf-bridge/Chopper

Norgren

Contextual Info: SP HJ NORGREN M/58102 Vacuum Pumps - 0,87 bar • Small, compact units • Compressed air driven • Simple to install Technical Data Ordering Information Medium: Compressed air, filtered and non-lubricated To order a vacuum pump with 80 Nl/min induced air at 6 bar operating pressure

XSH15

Contextual Info: Prelim inary D a ta s h e e t IXSH15N120A IGBT VCES VCE sat "S" Series - Improved SCSOACapability Sym bol T e s t C o n d itio n s M a x im u m R a tin g s 30 A 1200 V 4.0 V T O -2 4 7 A D 1200 J j = 2 5 °C to 150°C Tj = 2 5 °C to 150°C ; F^E= 1 MO 1200