TIM11 Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1112-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G-|dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package

TIM1112-8

Contextual Info: TOSHIBA TIM1112-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G1dB = 5.0 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package

TIM1112-4

Contextual Info: TOSHIBA TIM1112-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G1dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package

30yA

Abstract: TIM1112-2
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET M/CROtVAVE SEMICONDUCTOR TIM1112-2 TECHNICAL DATA FEATURES: • HIGH POWER PìdB = 33.5 dBm at 11.7 GHz to 12.7 GHz ■ HIGH GAIN GidB = 7.5 dB at 11.7 GHz to 12.7 GHz ■ BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE

TIM1112-15L

Contextual Info: MICROWAVE POWER GaAs FET TIM1112-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=42.0dBm at 11.7GHz to 12.7GHz n HIGH GAIN G1dB=6.0dB at 11.7GHz to 12.7GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C

Contextual Info: TOSHIBA MICROW AVE POWER GaAs FET TIM1112-8 internally Matched Power G aAs FETs X, Ku-Band Features * High power - P1dB = 39.5 dBm at 11.7 GHz to 12.7 GHz * High gain G1dB = 5.0 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1112-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G-|dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: MICROWAVE POWER GaAs FET TIM1112-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=33.5dBm at 11.7GHz to 12.7GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 11.7GHz to 12.7GHz RF PERFORMANCE SPECIFICATIONS Ta= 25°C

Contextual Info: MICROWAVE POWER GaAs FET TIM1112-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER P1dB=36.5dBm at 11.7GHz to 12.7GHz „ HIGH GAIN G1dB=9.5dB at 11.7GHz to 12.7GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

Contextual Info: MICROWAVE POWER GaAs FET TIM1112-2 FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 33.5dBm at 11.7GHz to 12.7GHz ･HIGH GAIN G1dB= 7.5dB at 11.7GHz to 12.7GHz ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL

TIM1112-2

Contextual Info: MICROWAVE POWER GaAs FET TIM1112-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED FET P1dB=33.5dBm at 11.7GHz to 12.7GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 11.7GHz to 12.7GHz RF PERFORMANCE SPECIFICATIONS

TIM1112-8

Contextual Info: MICROWAVE POWER GaAs FET TIM1112-8 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 11.7GHz to 12.7GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=5.0dB at 11.7GHz to 12.7GHz RF PERFORMANCE SPECIFICATIONS

TIM1112-4

Contextual Info: MICROWAVE POWER GaAs FET TIM1112-4 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED FET P1dB=36.5dBm at 11.7GHz to 12.7GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 11.7GHz to 12.7GHz RF PERFORMANCE SPECIFICATIONS

Contextual Info: TOSHIBA MICROW AVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1112-8 TECHNICAL DATA FEATURES: • HIGH POWER PidB = 39.5 dBm at 11.7 GHz to 12.7 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 5.0 dB at 11.7 GHz to 12.7 GHz ■ HERMETICALLY SEALED PACKAGE

TIM1112-4

Contextual Info: TOSHIBA MICROWAVE MICROWAVE POWER GaAs F ET S E M IC O N D U C T O R TIM1112-4 TECHNICAL DATA FEATURES: • HIGH POWER PidB = 36.5 dBm at 11.7 GHz to 12.7 GHz ■ HIGH GAIN GidB = 7.5 dB at 11.7 GHz to 12.7 GHz BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE

TIM1112-2

Contextual Info: TOSHIBA TIM1112-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G1dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1112-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G-|dB = 5.0 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: MICROWAVE POWER GaAs FET TIM1112-4 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=36.5dBm at 11.7GHz to 12.7GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 11.7GHz to 12.7GHz RF PERFORMANCE SPECIFICATIONS Ta= 25°C

STM32F429N

Abstract: STM32F429Ni
Contextual Info: STM32F427xx STM32F429xx ARM Cortex-M4 32b MCU+FPU, 225DMIPS, up to 2MB Flash/256+4KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 20 comm. interfaces, camera & LCD-TFT Datasheet - production data Features &"'! • Core: ARM 32-bit Cortex®-M4 CPU with FPU,

Contextual Info: STM32F437xx STM32F439xx ARM Cortex-M4 32b MCU+FPU, 225DMIPS, up to 2MB Flash/256+4KB RAM, crypto, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 20 comm. interfaces, camera&LCD-TFT Datasheet - production data Features &"'! • Core: ARM 32-bit Cortex®-M4 CPU with FPU,

WLCSP49

Contextual Info: STM32F401xB STM32F401xC ARM Cortex-M4 32b MCU+FPU, 105 DMIPS, 256KB Flash/64KB RAM, 10 TIMs, 1 ADC, 11 comm. interfaces Datasheet - production data Features • Core: ARM 32-bit Cortex -M4 CPU with FPU, Adaptive real-time accelerator ART Accelerator™ allowing 0-wait state execution

Contextual Info: STM32L15xx6/8/B-A Ultra-low-power 32-bit MCU ARM -based Cortex®-M3, 128KB Flash, 32KB SRAM, 4KB EEPROM, LCD, USB, ADC, DAC Datasheet - production data Features • Ultra-low-power platform – 1.65 V to 3.6 V power supply – -40°C to 85°C/105°C temperature range

stm32f205

Abstract: STM32F207 STM32F2xx stm32f20 SMT32F stm32f10x errata PM0059 PM0062 AN2606 stm32 timer RM00033
Contextual Info: AN2606 Application note STM32 microcontroller system memory boot mode Introduction The bootloader is stored in the internal boot ROM memory system memory of STM32 devices. It is programmed by ST during production. Its main task is to download the application program to the internal Flash memory through one of the available serial

arm stm32 f103

Abstract: stm32f103z STM32F103VG STM32F103VF STM32F103ZG stm32f103xg stm32 f103 100 pin STM32F103Rx LQFP100 LQFP144
Contextual Info: STM32F103xF STM32F103xG XL-density performance line ARM-based 32-bit MCU with 768 KB to 1 MB Flash, USB, CAN, 17 timers, 3 ADCs, 13 communication interfaces Preliminary data Features FBGA • Core: ARM 32-bit Cortex -M3 CPU with MPU – 72 MHz maximum frequency,