TIME675N Search Results
TIME675N Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: APT30GL100BN Transistors N-Channel IGBT V BR CES (V)1k V(BR)GES (V)20 I(C) Max. (A)30 Absolute Max. Power Diss. (W)147 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case850m Thermal Resistance Junc-Amb.40 g(fe) Min. (S) Trans. admitt. |
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APT30GL100BN Junc-Case850m delay40n time130n time675n | |
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Contextual Info: APT45GL100BN Transistors N-Channel IGBT V BR CES (V)1k V(BR)GES (V)20 I(C) Max. (A)45 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case625m Thermal Resistance Junc-Amb.40 g(fe) Min. (S) Trans. admitt. |
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APT45GL100BN Junc-Case625m delay40n time130n time675n | |
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Contextual Info: APT65GL100BN Transistors N-Channel IGBT V BR CES (V)1k V(BR)GES (V)20 I(C) Max. (A)65 Absolute Max. Power Diss. (W)245 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case.51 Thermal Resistance Junc-Amb.40 g(fe) Min. (S) Trans. admitt. |
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APT65GL100BN delay40n time130n time675n |