TIP 147 CW Search Results

SEG77

Abstract: 2SC3435 DRA18 EM78815 EM78P813 Seg85 exd6 Seg88
Contextual Info: ELAN MICROELECTRONICS CORP. EM78P813 program design to EM78815 Notice Please take notice to the undefined register in EM78815. R1 PAGE2 Interrupt Flag2 real value 7 6 5 4 3 2 1 RBF/STD FSK/CW DED CNT2 CNT1 TCC X X R/W-0 R/W-0 R/W-0 R/W-0 R/W-0 R/W-0 R/W-0

cv21 10k

Abstract: P-QFP32-7x7-0 CXA2040AQ
Contextual Info: CXA2040AQ I2C Bus-Compatible Video Switch Description The CXA2040AQ is an I2C bus-compatible 5-input, 3-output video switch for TVs. 32 pin QFP Plastic Features • Serial data control via I2C bus • 5 composite video input systems • 2 Y/C (S terminal) input systems

cv21 10k

Abstract: CXA2040Q SYNCD11 GCVM21
Contextual Info: CXA2040Q I2C Bus-Compatible Video Switch For the availability of this product, please contact the sales office. Description The CXA2040Q is an I2C bus-compatible 5-input, 3-output video switch for TVs. 32 pin QFP Plastic Features • Serial data control via I2C bus

cv21 10k

Abstract: CXA2040AQ
Contextual Info: CXA2040AQ I2C Bus-Compatible Video Switch Description The CXA2040AQ is an I2C bus-compatible 5-input, 3-output video switch for TVs. 32 pin QFP Plastic Features • Serial data control via I2C bus • 5 composite video input systems • 2 Y/C (S terminal) input systems

Contextual Info: MGA-65100 Medium Power 2 Stage GaAs FET Cascade What LETT mUtim HEW PA C K AR D Chip Outline Features • • • • Unmatched 2 Stage FET Cascade High Output Power: 24 dBm typical Pi dB at 14 GHz High Gain: 9.5 dB typical Gi dB at 14 GHz Single Supply Bias

Contextual Info: data sheet 0A V A N T E K MGA-65100 Medium Power 2 Stage GaAs FET Cascade October, 1989 Features • • • • Avantek Chip Outline Unmatched 2 Stage FET Cascade High Output Power: 24 dBm typical Pi ¿b at 14 GHz High Gain: 9.5 dB typical Gi dB at 14 GHz

Contextual Info: HEWLETT-PACKARD/ CI1PNTS blE T> H EW LETT PACKARD m • MMM75A4 DD10E13 110 * H P A î î ^ ’651n 0 Medium PQwer 2 Stage GaAs FET Cascade Chip Outline Features • • • • Unmatched 2 Stage FET Cascade High Output Power: 24 dBm typical Pi ds at 14 GHz

ne8004 FET

Abstract: ne800495-6 NE800495 NE8004 ne0800 NE8004956
Contextual Info: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S2HVS FREQUENCY CLASS A OPERATION HIGH EFFICIENCY: t]A D D ;> 35% TYP BROADBAND CAPABILITY AVAILABILITY: Chip Hermetic Package m •o PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES CO PROVEN RELIABILITY

Contextual Info: SLOTTED OPTICAL SWITCH lU I E im iillC i H21B1/2/3 SYMBOL A ' t @ 6, =4 SECTION X - X~T~ LEAD PROFILE 8T133»-0t A, A; b. P 0, 0; Si £ L MILLIMETERS MIN. MAX. 10.7 1V0 3.0 3Z 30 3.2 600 .750 .50 MOM, 247 24.3 11.8 3.0 6.9 2,3 6.15 12.0 INCHES MIN MAX .422

st 339

Abstract: st339 diode 937 ke SLOTTED OPTICAL SWITCH for C3 937 ke ST1131-11 KE 34A
Contextual Info: SLOTTED OPTICAL SWITCH op fiE L tm yics H21A1/2/3 SVM BQi MiUIMETERS MAX. MIN. •D 1 - S I ±y _ ^ 3 *1 SECTION X - X~T~ LEAD PROFILE ST?339*01 INCHES MIN, A W .7 11.0 ,422 433 A- 3.0 a? 119 .125 At 3.0 32 .113 125 <8*> b, .SCO .750 .50 NOM. .024 ,030

NE960R2

Abstract: NE960R200 NE960R275 NE961R200
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power CW with high linear

NE960R5

Abstract: NE960R500 NE960R575 NE961R500 NE962R575
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power CW with high linear

B0411

Abstract: B0733 THD200F1 dk52 2SC4977 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSOH SGS-THOMSON PAGE REPLACEMENT NEAREST PREFERRED KDUSTHY STANDARD 2N3016 2N5339 93 2N3772 2N3021 BDW52C 169 2N3789 2N3022 BDW52C BDW52C BDW52C 169 169 169 2N3790 2N3791 2N3792 BDW52C BDW52C 169 169 77 2N3863 2N3864

HPMA-0886

Abstract: D 973-R HPMA-0835 HPMA0885
Contextual Info: NO V 1 3 1991 TmiKM hai HP AE CWKLAERTDT 1 Silicon Bipolar Monolithic Amplifiers Technical Data HPMA-0800 HPMA-0835 HPMA-0885 HPMA-0886 Features HPMA-0800 • 22.9 dB G ain T ypical a t 1 GHz • Low Noise Figure: 2.5 dB T ypical a t 1 GHz HPMA-0835 • G ain -100% RF T ested

NE960R2

Abstract: NE960R200 NE960R275 NE961R200
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power CW with high linear

mga 017

Abstract: TA111 MGA-62100-GP0 MGA-62100-GP2 MGA-62100-GP6 MGA-621
Contextual Info: d a ta sheet O avantek MG A-62100 Low Noise G aAs MM IC Am plifier O ctober, 1989 Features • • • Avantek Chip Outline Output Matched 2 Stage FET Cascade Broadband Performance: 2 - 1 4 GHz Low Noise Figure 50 £ 2 : 2.5 dB typical at 4 GHz 5.0 dB typical at 14 GHz

Contextual Info: data sheet 0AVANTEK M G A-62100 Low Noise G aA s MM IC A m plifier O ctober, 1989 Features • • • Avantek Chip Outline Output Matched 2 Stage FET Cascade Broadband Performance: 2 - 1 4 GHz Low Noise Figure 50 ft : 2.5 dB typical at 4 GHz 5.0 dB typical at 14 GHz

Contextual Info: MA4L & MADL Series Silicon PIN Limiter Diodes V20 Chip Outlines Features • • • • • • Low Insertion Loss and Noise Figure High Peak and Average Operating Power Various P1dB Compression Powers Low Flat Leakage Power Proven Reliable, Silicon Nitride Passivation

Contextual Info: O avantek MGA-62100 Low Noise GaAs MMIC Amplifier Avantek Chip Outline Features • • • • • Output Matched 2 Stage FET Cascade Broadband Performance: 2 -1 4 GHz Low Noise Figure 50 £2 : 2.5 dB typical at 4 GHz 5.0 dB typical at 14 GHz 8.5 dB typical Gain at 14 GHz

inert gas generator

Contextual Info: MGA-62100 Low Noise GaAs MMIC Amplifier Thai HEWLETT W!EM PA C K A R D Features • • • • • Output Matched 2 Stage FET Cascade Broadband Performance: 2 -14 GHz Low Noise Figure 50 Q : 2.5 dB typical at 4 GHz 5.0 dB typical at 14 GHz 8.5 dB typical Gain at 14 GHz

Contextual Info: Q a v a n tek MGA-65100 Medium Power 2 Stage GaAs FET Cascade Avantek Chip Outline Features • • Unmatched 2 Stage FET Cascade High Output Power: 24 dBm typical Pi dB at 14 GHz • High Gain: 9.5 dB typical Gi dB at 14 GHz • Single Supply Bias 3» mil

Contextual Info: MGA-62100 Low Noise GaAs MMIC Amplifier HEW LETT PA C K A R D *H P A m Features 014 GG1 0 EDS 4447564 • • Output Matched 2 Stage FET Cascade Broadband Performance: 2 - 1 4 GHz Low Noise Figure 50 £2 : 2.5 dB typical at 4 GHz 5.0 dB typical at 14 GHz

AVANTEK

Abstract: MGA-65100-GP0 MGA-65100-GP2 MGA-65100-GP6 S2112 GaAs FET chip AVANTEK transistor 1.57 GHz TRANSISTOR
Contextual Info: Q avantek MGA-65100 Medium Power 2 Stage GaAs FET Cascade Avantek Chip Outline Features • • • • Unmatched 2 Stage FET Cascade High Output Power: 24 dBm typical Pi dB at 14 GHz High Gain: 9.5 dB typical Gi dB at 14 GHz Single Supply Bias 2 ,4 B ackside

1N444S

Contextual Info: ERICSSON ^ Preliminary May 1997 PBL 386 50/1 Subscriber Line Interface Circuit Description Key Features The PBL 386 50/1 Subscriber Line Interface Circuit SLIC is a 90 V bipolar integrated circuit for use in Central Office Metering applications and other telecommunications