TIP111 Search Results

MJE224

Abstract: tip111g TIP11X
Contextual Info: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon Transistors http://onsemi.com Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − • •

P112

Abstract: TIP111 darlington npn tip 102 TIP110 TIP112 TIP115 TIP116
Contextual Info: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 ■ PHIN T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. P-N-P complements are

TIP NPN

Abstract: TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 tip 115
Contextual Info: TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP 110, 111, 112 TIP 115,116,117 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Darlington Amplifier and Low Speed Switching Applications DIM A B C D E F G H J K L U N MIN MAX 16.51

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP110 TIP111 TIP112 NPN TIP115 TIP116 TIP117 PNP TO-220 Plastic Package Intended for use in Medium Power Linear and Switching Applications

Contextual Info: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 H P H I N T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N -P -N epitaxial-base transistors in m o n o lith ic D arlin g to n c irc u it fo r au dio o u tp u t stages and general purpose a m p lifie r and sw itching applications. T 0 -2 2 0 A B plastic envelope. P-N-P co m p lem ents are

Contextual Info: TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • DECEM BER 1971 - REVISED MARCH 1997 Designed for Complementary Use with TIP110, TIP111 and TIP112 T 0 -2 2 0 PACKAGE TOP VIEW • 50 W at 25°C Case Temperature

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP111 DARLINGTON TRANSISTOR NPN TO-220 FEATURES z High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) z Low Collector-Emitter Saturation Voltage z Industrial Use

darlington power transistor

Abstract: TIP110/111/112 TIP110-D transistor 400 volts.50 amperes 1N5825 MSD6100 TIP110 TIP111 TIP112 TIP115
Contextual Info: ON Semiconductort NPN Plastic Medium-Power Complementary Silicon Transistors TIP110 TIP111* . . . designed for general–purpose amplifier and low–speed switching applications. TIP112 * PNP • High DC Current Gain — • • • • TIP115 hFE = 2500 Typ @ IC

TIP11

Abstract: TIP110 TIP111 TIP112 TIP115 TIP116 TIP117
Contextual Info: IRAN SYS TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS m C TR O M C S LIMITED T0-220 PACKAGE TOP VIEW • Designed for Complementary Use with TIP110, TIP111 and TIP112 B C • 50 W at 25°C Case Temperature C C • 4 A Continuous Collector Current

t1p110

Abstract: TLP110
Contextual Info: G E SOLID STATE 3875081 G E El SOLID STATE d F | 3Û7SGÛ1 DG1733D 3 |~~ Ö 1É 17330 D T ' 3 3 -2 3 D arlin g to n P o w e r Tran sistors_ TIP110, TIP111, TIP112 1336 File Number 2-Ampere N-P-N Darlington Power Transistors < TERMINAL DESIGNATIONS For Low and Medium Frequency Power

transistor c 1971

Abstract: TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 C 1971 transistor transistor 1971
Contextual Info: TIP110, TIP111, TIP112 NPN SILICON POWER DARLINGTONS Copyright 1997, Power Innovations Limited, UK ● DECEMBER 1971 - REVISED MARCH 1997 Designed for Complementary Use with TIP115, TIP116 and TIP117 TO-220 PACKAGE TOP VIEW ● 50 W at 25°C Case Temperature

TIP112

Abstract: TIP111 TIP110 TIP115 TIP116 TIP117
Contextual Info: TIP110, TIP111, TIP112 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP115, TIP116 and TIP117 TO-220 PACKAGE TOP VIEW ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current B 1 ● Minimum hFE of 500 at 4V, 2 A C

TIP110

Abstract: TIP111 TIP112 TIP115 TIP116 TIP117
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PLASTIC POWER TRANSISTORS TIP110 TIP111 TIP112 NPN TIP115 TIP116 TIP117 PNP TO-220 Plastic Package Intended for use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC

10 amp npn darlington power transistors

Abstract: transistor 600 volts.50 amperes 100 amp npn darlington power transistors transistor 400 volts.50 amperes driver transistor hfe 60 TIP110/111/112 TO-220 Darlington npn to-220 NPN 200 VOLTS POWER TRANSISTOR npn darlington transistor 150 watts
Contextual Info: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) TIP111, TIP112, TIP116, and TIP117 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors http://onsemi.com Designed for general-purpose amplifier and low-speed switching applications.

Contextual Info: TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP110, TIP111 and TIP112 TO-220 PACKAGE TOP VIEW ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current B 1 ● Minimum hFE of 500 at 4V, 2 A C

sgs110

Abstract: SGS116
Contextual Info: •I 7 ^ 2 3 7 002^2^3 fi H ^ 3 3 ^/ SCS-THOMSON TIP/SGS110-111-112 [IQMmiiOïtMQÛS TIP/SGS115-116-117 S G S-TH0MS0N 3DE D POWER DARLINGTONS DESCRIPTIO N The TIP110, TIP111, TIP112 and SGS110, SGS111, SQS112 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration

MJE224

Abstract: pnp power transistor
Contextual Info: ON Semiconductor NPN Plastic Medium−Power Complementary Silicon Transistors TIP110 TIP111* . . . designed for general−purpose amplifier and low−speed switching applications. TIP112 * PNP • High DC Current Gain — • • • • TIP115 hFE = 2500 Typ) @ IC

tip 25c

Abstract: TIP 120c TIP NPN npn tip TIP117 tip 117 tip darlington pnp 470M darlington tip 110 TIP112
Contextual Info: S A N Y O NPN TIP110 TIP111 TIP112 SEM ICONDUCTOR PNP TIP115 TIP116 TIP117 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-80-100 VOLFS, 2 AMPERE HIGH CURRENT GAIN h F E = 4000 typ. @3V, 1.5A LOW SATURATION VOLTAGE V C E S A T = 1-0V typ. @1.5A MONOLITHIC CONSTRUCTION WITH BUILT-IN

TIP111

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors TIP111 DARLINGTON TRANSISTOR NPN TO-220 FEATURES z High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) z Low Collector-Emitter Saturation Voltage z Industrial Use

TIP111G

Abstract: TIP117 TIP110 TIP110G TIP111 TIP112 TIP112G TIP115 TIP115G TIP116
Contextual Info: TIP110, TIP111, TIP112 NPN ; TIP115, TIP116, TIP117 (PNP) TIP111, TIP112, TIP116, and TIP117 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Designed for general-purpose amplifier and low-speed switching applications. Features

Contextual Info: TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A Min. Low Collector-Emitter Saturation Voltage

Contextual Info: File Number TIP110, TIP111, TIP112 1336 H A RR IS S E M I C O N D SE CT OR 5bE D 4 3 D 2 27 1 □ □ 4 D T 2 2 ÛTT » H A S T-SSr-'ZSf 2-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS For Low and Medium Frequency Power Switching, Hammer Driver, Audio Amplifier, and

Contextual Info: Darlington Power Transistors Part No. 2N6037 2N6038 2N6039 2N6034 2N6036 TIP100 TIP110 TIP120 TIP130 TIP101 TIP111 TIP121 TIP131 TIP102 TIP112 TIP122 TIP132 TIP105 TIP115 TIP125 TIP106 TIP116 TIP126 TIP107 TIP117 TIP127 Polarity NPN PNP NPN PNP VCEO IC Bipolar Transistors

TIP110

Abstract: TIP111 TIP112 TIP115 TIP116 TIP117 TIP11S tip111.tip116 tipi transistor TIP112 boca
Contextual Info: PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS NPN TIP110 TIP111 TIP112 .designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining Voltage60 V Min - TIP110.TIP115 CEO(SUS) = 80 V (Min) - TIP111 ,TIP116