TIPL7 Search Results

Contextual Info: IN STR t5 -COPTO} DlfJû'ifcilTSb 8961726 TEXAS INSTR COPTO 0G37D27 . 62C 37027 7"-33-/3 TIPL753, TIPL753A N-P-N SILICON POWER TRANSISTORS 1982 - REVISED OCTOBER 1984

by205 diode

Abstract: diode by205 400 diode by205
Contextual Info: TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS ● Rugged Epitaxial Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● txo typically 320 ns, IC = 10 A This series is currently available, but

TIPL760B

Abstract: 2N2222 2N2904 BY205-400 D44H11 D45H11 TIPL760C by205
Contextual Info: TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1200 Volt Blocking Capability C 2 ● 75 W at 25°C Case Temperature

Contextual Info: TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 6 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 120 W at 25°C Case Temperature

Contextual Info: TIPL770 NPN SILICON POWER TRANSISTOR C o p y rig h t 1997, Power Innovations Limited, UK MARCH 1984 - REVISED MARCH 1997 • Rugged Triple-Diffused Planar Construction • 2.5 A Continuous Collector Current • Operating Characteristics Fully Guaranteed

L760A

Contextual Info: TIPL760, TIPL760A NPN SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK AUG UST 1978 - REVISED MARCH 1997 • Rugged Triple-Diffused Planar Construction • 4 A Continuous Collector Current • Operating Characteristics Fully Guaranteed

L765A

Contextual Info: TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS C o p y rig h t 1997, Power Innovations Limited, UK AUG UST 1978 - REVISED MARCH 1997 • Rugged Triple-Diffused Planar Construction • 10 A Continuous Collector Current • Operating Characteristics Fully Guaranteed

TIPL774

Abstract: P6019 P6020 lZ-300 P6042 TIP41 K041 TIP41 Texas Instruments NPN Transistor 30A 400V
Contextual Info: TEXAS I NS TR -COPTO} 8961726 TEXAS De J IN S T R O P T O 0D37Cm 62 C 3 7 0 9 1 r TIPL774 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTOR O C T O B E R 1 9 8 2 - R E V IS E D O C T O B E R 1 9 8 4 T-3 3 - 2 9 20 A Continuous Collector Current 150 W at 50°C Case Temperature

TIPL791A

Abstract: 2N2222 2N2904 BY205-400 D44H11 D45H11 TIPL791
Contextual Info: TIPL791, TIPL791A NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed

2N2222

Abstract: 2N2904 BY205-400 D44H11 D45H11 TIPL770
Contextual Info: TIPL770 NPN SILICON POWER TRANSISTOR Copyright 1997, Power Innovations Limited, UK MARCH 1984 - REVISED MARCH 1997 ● Rugged Triple-Diffused Planar Construction ● 2.5 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C

2N2222

Abstract: 2N2904 BY205-400 D44H11 D45H11 TIPL762 TIPL762A
Contextual Info: TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997 ● Rugged Triple-Diffused Planar Construction ● 6 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed

BY20S-400

Abstract: TIPL770
Contextual Info: TIPL770 NPN SILICON POWER TRANSISTOR _M A R C H 1984 - R E V IS E D M A Y 199? • Rugged Triple-Diffused Planar Construction • 2.5 A Continuous Collector Current • Operating Characteristics Fully Guaranteed at100°C R<r . .

diode by205

Abstract: by205 diode diode by205 400 by205 BY205-400 TRANSISTOR D 1978 TIPL790 TRANSISTOR 2n2904 2N2222 2N2904
Contextual Info: TIPL790, TIPL790A NPN SILICON POWER DARLINGTONS ● Rugged Epitaxial Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● txo typically 320 ns, IC = 10 A TO-220 PACKAGE TOP VIEW B 1 C 2 E

TIPL760

Contextual Info: TIPL760, TIPL760A NPN SILICON POWER TRANSISTORS Rugged Triple-Diffused Planar Construction 4 A Continuous Collector Current Operating Characteristics Fully Guaranteed at 100°C TO-220 PACKAGE TOP VIEW 1000 Volt Blocking Capability B 1 C 2 75 W at 25°C Case Temperature

TIPL763A

Abstract: TIPL763
Contextual Info: bS TE XA S IN S T R -COPTO} _ ' 896 17 26 TEXAS INSTR OPTO DE |flThl7ati 0 0 3 7 0 ^ — 62C 37069 D TIPL763, TIPL763A N-P-N SILICON POWER TRANSISTORS T~ OCTOBER 1982 - REVISED O CTOBER 1984 • Rugged Triple-Diffused Planar Construction •

726TEXAS

Abstract: 37021 37021 TI
Contextual Info: L2 TEXAS INSTR ÎOPTO> D F ^ a c]bl7at. [][|37Dn S 62C 3 70 19 8 9 6 17 26 TEXAS INSTR OPTO TIPL752, TIPL752A N-P-N SILICON POWER TRANSISTORS T - "3 3 - / 3 OCTOBER 1982 - REVISED OCTOBER 1984 150 W at 2 5 ° C Case Temperature 6 A Continuous Collector Current

Contextual Info: TEXAS INSTR - COPTO} 8961726 TEXA S ^2 IN S T R DE <OPTO> 0D37D‘ìl f 62C 3 7 0 9 1 TIPL774 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTOR OCTOBER 19 8 2 - R EV ISED O CTOBER 1984 20 A Continuous Collector Current T -3 3 -2 9 150 W at 5 0 °C Case Temperature

diode e106

Abstract: tipl 750 TIPL785A
Contextual Info: TEXAS INSTR -£OPTO> bE Ï F | flìblTEh GD37113 fi |~~ T -3 3 -2 9 Ö961726 TEXAS IN ST R 62C_37113 COPTO TIPL785, TIPL785A, TIPL790;TIPL790A N-P-N MONOLITHIC DARLINGTON CONNECTED SILICON POWER TRANSISTORS OCTOBER 1982 - REVISED OCTOBER 1984 • Rugged Epitaxial Planar Construction

LB120A

Abstract: TIPL755A TIPL755 TIPL765A
Contextual Info: Æ&m o s p e c SWITCHMODE SERIES NPN POWER TRANSISTORS NPN . designed for use in high-voltage,high-speed,power switching in inductive circuit,motor control,solenoid and relay drivers. TIPL755 TIPL755A FEATURES: *Collector-Emitter Sustaining VoltageV Ceo Sus = 3 7 5 v ( M in > - T IP L 7 5 S

by205

Abstract: BY205-400
Contextual Info: TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability ● 125 W at 25°C Case Temperature

Contextual Info: TIPL761, TIPL761A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 100 W at 25°C Case Temperature

TIPL762

Abstract: TIPL762A T1PL762
Contextual Info: TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS _ AUGUST 1978 • REVISED MAY 1995 • Rugged TViple-Diffused Planar Construction • 6 A Continuous Collector Current • Operating Characteristics Fully Guaranteed at100°C • 1000 Volt Blocking Capability

100-C

Abstract: BY205-400 TIPL760 TIPL760A TIPL760B TIPL760C
Contextual Info: TIPL760, TIPL760A NPN SILICON POWER TRANSISTORS _ A U G U S T 1978 • R E V IS E D M A Y 1995 • Rugged Triple-Diffused Planar Construction • 4 A Continuous Collector Current • Operating Characteristics Fully Guaranteed at 100°C

TIPL760c

Abstract: 2N2222 2N2904 BY205-400 D44H11 D45H11 TIPL760B
Contextual Info: TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed