TIPL757 Search Results

37044

Abstract: TIPL757
Contextual Info: TEXAS INSTR ÌOPTO> b2 DF|ùTt.l75t. 0037043 2 8961726 TEXAS INSTR OPTO 62C 37043 TIPL757, TIPL757A N-P-N SILICON POWER TRANSISTORS REV ISED O CTOBER 1984 T - 33-/5“ 20 0 W a t 2 5 ° C C ase Temperature 15 A Continuous Collector Current 25 A Peak Collector Current

2n2222 texas instruments

Abstract: BY206 TIPL757 TIPL757A n-p-n r.f. power transistors npn 1000V 15A D037D
Contextual Info: TEX AS I NST R -COPTO} ta DE JflTblTEt. D D 3 7 D 4 4 8 9 6 1 7 2 6 TEXAS INSTR OPTO 62C 37044 D f ,7""- 3S-/S“ TIPL757, TIPL757A N-P-N SILICON POWER TRANSISTORS i electrical characteristics at 25 ° C case temperature (unless otherwise noted) - PARAM ETER

TIPL757

Abstract: 1000v 200w Transistor TIPL757A TIP757A
Contextual Info: TEXAS INSTR ÌOPTO> 89 61 72 6 TEXAS INSTR OPTO 62C 3 7 0 4 3 TIPL757, T1PL757A N-P-N SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 • 2 0 0 W a t 25° C Case Temperature • 15 A Continuous Collector Current • 2 5 A Peak Collector Current

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

TIS84

Abstract: TIPL763A tk8a60da 2N6571 TIS134 TK10A60D ttc5200 TK4A60DB TIS92 tipl763
Contextual Info: STI Type: TIP539 Notes: Polarity: NPN Power Dissipation: 125 VCEV: 400 VCEO: 300 ICEV: 400 ICEV A: 1.0 hFE: 20 hFE A: 7.5 VCE: 2.5 VBE: 2.0 IC: 15 COB: fT: 10 Case Style: TO-204AA/TO-3: Industry Type: TIP539 STI Type: TIP540 Notes: Polarity: NPN Power Dissipation: 125

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

30G140

Abstract: 2SC2922 SANKEN LS2025 2SC3241 2N5629 MOTOROLA MRF454 motorola MRF435 40363 MJ15026 2SC2608
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N6359 B0315 MJE4340 MJE4340 B0317 PTC173 2N5629 2N6302 ~j~:~:~ 25 30 MJ6302 2N5630 BOY77 BOY77 BOY37 2N3773 BOY37A BOY37A ~j~:~:~ 35 40 MJ3773 MJ3773 MJ3773 2N5631 2S0873 BOX50 BOX50 TRW6259 ~~~~~~3

Contextual Info: S EM ICO ND UCT OR TECHNOLOGY OSE D II fll3b45û DGOGSHfl 1 “ NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TR A N SISTO R S STI Typs Industry Type Power Dissipation @25 °C watts •CEV VCEV (volts) VcEO (volts) (volts) VCE(SAT.) Vbe (SAT.)@ Ic hFE lc (Min.)

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y