TJ 1H Search Results

CP08G

Abstract: cp08e CQ08G CL16C CL16D CL16E CL16F CL16G CL16J CM16C
Contextual Info: - a n Vtm Vgd VGT V Tj CC) ITM (A) tt dv/dt (min) (min) *typ *typ Tq IH IGT (V) (mA) Te (°C) (V) Tj (°C) vo (V) (V ß s) Tj CC) Vd (V) ( ß s) Tj <°C> Vr (V) ITM (A) *typ (mA) Rth (tt2) m m æ CC/W) 1. 1. 1. 1. 1. 50 50 50 50 50 25# 251 25# 25# 25# 320

10MQ060N

Contextual Info: Bulletin PD-20519 rev. E 08/00 10MQ060N 2.1 Amp SCHOTTKY RECTIFIER SMA Description/Features Major Ratings and Characteristics Characteristics IF 10MQ060N Units DC 2.1 A VRRM 60 V IFSM @ tp = 5 µs sine 40 A 0.63 V - 55 to 150 °C VF @1.5Apk, TJ=125°C TJ range

10MQ060N

Abstract: marking code IR1H surface mount diode 10MQ060 AN-994
Contextual Info: Bulletin PD-20519 rev. F 05/01 10MQ060N 2.1 Amp SCHOTTKY RECTIFIER SMA Major Ratings and Characteristics Characteristics IF Description/Features 10MQ060N Units DC 2.1 A VRRM 60 V IFSM @ tp = 5 µs sine 40 A 0.63 V - 55 to 150 °C VF @1.5Apk, TJ=125°C TJ range

ir1h

Abstract: 10MQ060TR marking code IR1H surface mount diode 10MQ060N 10MQ060 AN-994 PD-20519
Contextual Info: Bulletin PD-20519 rev. G 02/02 10MQ060N 2.1 Amp SCHOTTKY RECTIFIER SMA Major Ratings and Characteristics Characteristics IF Description/Features 10MQ060N Units DC 2.1 A VRRM 60 V IFSM @ tp = 5 µs sine 40 A 0.63 V - 55 to 150 °C VF @1.5Apk, TJ=125°C TJ range

Contextual Info: HiPerFAST IGBT IXGH30N60B IXGT30N60B vCES ^C25 vCE sat = 600 V = 60 A = 1 .8 V = 130 ns Preliminary data ÒB Symbol Test Conditions VCES Tj =25°Cto150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 Mft 600 V vGES vGEM Continuous ±20 V Transient ±30

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

24N50B

Abstract: IXGH24N50B IXGH24N50BU1 IXGH24N60B IXGH24N60BU1
Contextual Info: DIXYS V,CES HiPerFAST IGBT IXGH 24N50B IXGH 24N60B Symbol Maximum Ratine Test Conditions 24N50 Tj =25°C to150°C 500 600 V V CGR Tj = 25°C to 150°C; RG6 = 1 M il 500 600 V v Continuous ±20 V VGEM Transient 30 V C25 Tc = 25°C 48 A Tc = 90°C 24 A

2F P marking

Abstract: 10MQ060N ir1h 10MQ060 AN-994
Contextual Info: PD-20519 rev. D 11/99 10MQ060N 2.1 Amp SCHOTTKY RECTIFIER SMA Description/Features Major Ratings and Characteristics Characteristics IF 10MQ060N Units DC 2.1 A VRRM 60 V I FSM @ tp = 5 µs sine 40 A 0.63 V - 40 to 150 °C VF @ 1.5Apk, TJ=125°C TJ range The 10MQ060N surface mount Schottky rectifier has been

IXGH17N100

Contextual Info: BIXYS jjjjjB jjj Low VCHH0IGBT High speed IGBT IXGH/IXGM17N100 IXGH/IXGM17 N100A VC E S ^C25 v C E sat 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V « Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE = 1 M fi

Contextual Info: 95 max. 314425 314425 □ Anford erunq sstufe class 15 x 5.08 = 7 6 ,2 contact layout Bestückungsplan / I -ijj- I -jjj- I -tjì- I -tjì- I -tji- » -ijj- I - -jjj- I -fo ' I -tji I -tji- » -cjfr » -i { j - I bestückt - - fo I I solder terminal 1,0 x 1,0 mm

50N60B

Contextual Info: OIXYS Preliminary data HiPerFAST IGBT IXGN 50N60B V CES ^C25 vCE sat = 6 0 0 V = 7 5 A = 2 .5 V G_ Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 M£1 600 V vGES vGEM u u Maximum Ratings Continuous ±20 V Transient

VMO 440

Abstract: ixys VMO 440
Contextual Info: HiPerFET MOSFET Module VMO 550-01 F VD S S D25 R DS on N-Channel Enhancement Mode ? G = 100 V = 590 A = 2.1 m ii D I Preliminary Data KS A s Symbol Test Conditions Voss Tj = 25°C to 150°C 100 V Tj = 25°C to 150°C; R as = 10 kil 100 V VGs vG SM 'dbo

x25-m

Abstract: MARKING H140 diode b tu 25 c JB SMD MARKING
Contextual Info: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE3S4M U nit-m m W eight 0.326g Typ 40V 3A ® (g)(4) • SMD Feature • SMD • Tj=150lC • Tj=150°C • P r r s m T V ^ V ï ^ iS Ü Œ • P rrsm Rating High lo Rating-Small-RKG MainUse

SG30TC

Contextual Info: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FTO-220G SG30TC 15M Unit : mm Weight 1.54g Typ nvhfB-SKW 15 0 V 3 0 A .4.5 Feature >Tj=150°C • Tj=150°C • 1 High lo Rating >7HÆ -J b K » » Full Molded 1 Low Ir=40|jA Ir=40|jA ' Resistance for thermal run-away

Contextual Info: Schottky Barrier Diode Twin Diode • fttK H S60SC4MT O UTLINE U n it I m m Package : MTO-3PT 40V 60A Feature Tj=150°C Tj=150°C 6\c Sm all 6\c High lo Rating Main Use ^ 'v i- y f n M Sw itching Regulator DC/DC n yjK —$ D C /D C Converter Hom e Appliance, Gam e, Office Automation

SG DIODE MARKING

Abstract: 2KV DIODE diode sg 45
Contextual Info: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FTO-220G S G 20T C 1 5 M U nit : mm W eight 1.54g Typ w h jtH H W 15 0 V 2 0 A 4.5 Feature >Tj=150°C • Tj=150°C 1 High lo Rating » Full Molded 1 Low Ir=30|jA >7H Æ - J b K •ÎSIr=30|jA

Contextual Info: VS-42CTQ030SHM3, VS-42CTQ030-1HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A D2PAK FEATURES TO-262 • 150 °C TJ operation • Center tap configuration • Very low forward voltage drop • High frequency operation

Contextual Info: VS-42CTQ030SHM3, VS-42CTQ030-1HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A D2PAK FEATURES TO-262 • 150 °C TJ operation • Center tap configuration • Very low forward voltage drop • High frequency operation

Contextual Info: VS-20CTQ150SHM3, VS-20CTQ150-1HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 10 A TO-263AB D2PAK FEATURES TO-262AA • 175 °C TJ operation • Center tap configuration • Low forward voltage drop • High frequency operation

STS 9015

Abstract: H-17 H-18 H-19
Contextual Info: — 300 — -»M y z ? • T M 2 0 0 R Z r-M, -H, -24, -2Hj ±3£/— ^-XR8 AC 2500V • * * £ & ( « « . Tr= -C) i50Hz/60HzIF.£^?£, 1+M 9 [Tj= 125°C, Vb=1/^V7;«,w! f£ iiL ~Tj V Irhm V Idrm V Vtm A Vc.T A Igt A Vcd A?S Igd A'fis dv/dt W In W Rth V

Contextual Info: VS-30CTQ.SHM3, VS-30CTQ.-1HM3 Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A D2PAK FEATURES TO-262 • 175 °C TJ operation • Center tap configuration • Very low forward voltage drop • High frequency operation

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE S G 10T C 1 5 M Unit : mm Package I FTO-220G Weight J.54g Typ 150 V 10 A 4.5 Feature • Tj=i5(rc • • • • • • 7 J IÆ -J U K • e i R = i5 MA • j r iiìè s b c u c < u • « « M S 2kVßfiE Tj=150°C

Contextual Info: VS-MBRB4045CTHM3, VS-MBR4045CT-1HM3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 20 A VS-MBRB4045CTHM3 VS-MBR4045CT-1HM3 FEATURES • 150 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy

Contextual Info: VS-MBRB4045CTHM3, VS-MBR4045CT-1HM3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 20 A VS-MBRB4045CTHM3 VS-MBR4045CT-1HM3 FEATURES • 150 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy