TJ125 Search Results

SF80G15

Abstract: SF80J15 TOSHIBA THYRISTOR 80J15
Contextual Info: THYRISTOR_ SF80 D,G,J 15 SILICON DIFFUSED TYPE U nit HIGH POWER CONTROL APPLICATIONS. in m m 0 3 a o ± c i3 FEATURES : . Repetitive Peak Off-State Voltage : VpRM R e p e t i t i v e P e a k R e verse V o l t a g e : Vrrm . A v e r a g e O n - S t a t e C urrent

M3JZ

Abstract: SM3G
Contextual Info: i SM3 G,J Z47 SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS. Unit in mm . Repetitive Peak Off-State Voltage : V¡)RM*4()0» 600V . R.M.S On-State Current 1 0.3 MAX 0Z2 ±0.2 : It (RMS)=3A . High Commutating (dv/dt) . Isolation Voltage : VISOL=1500V AC

APT8043BLL

Abstract: APT8043SLL
Contextual Info: APT8043BLL APT8043SLL 800V POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT8052BFLL

Abstract: APT8052SFLL
Contextual Info: APT8052BFLL APT8052SFLL 800V 15A POWER MOS 7 R FREDFET 0.520Ω BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

5B2 rectifier

Contextual Info: imemaoonai S Rectifier bSE » s e rie s B25RIA/B25H2S internationalrectifier m SCR Power Modules 25A Features • ■ ■ ■ ■ ■ ■ ■ 4flSS4S5 D D l b s 5? I T S H I N R G la s s p a s s iv a te d ju n c tio n s fo r g re a te r re lia b ility E le c tric a lly is o la te d base p la te 3 5 0 0 V RM S

Contextual Info: _ _ „ _ • international W Rectifier 4555452 G ü lb S H Üb3 ■ INR international rectifier ^se» s e rie s b4oa BACK TO BACK SCRs Power Modules 40A Features ■ G la s s p assivated junctions for greater reliability ■ Electrically isolated b a se plate 3500V RM S

t32 1-l

Contextual Info: Ratings and characteristics of Fuji IGBT 1 Í V 1 B H 3 D — 1 2 2. Equivalent circuit 1. Out Iine Drawing C:Collector î G :Gate FWD o Ò E:Emitter C O M N FC T I ON SATE CO LLECTO R © E M IT T E R 3. Absolute maximum ratings . C Tc=250C Ratings

APT6010LLLG

Abstract: APT6010B2LL APT6010LLL
Contextual Info: Ω 0.100Ω 600V 54A APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* *G POWER MOS 7 R Denotes RoHS Compliant, Pb Free Terminal Finish. MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching

APT6013B2LL

Abstract: APT6013LLL
Contextual Info: APT6013B2LL APT6013LLL 600V 43A POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT30M30B2LL

Abstract: APT30M30LLL
Contextual Info: APT30M30B2LL APT30M30LLL 300V 100A 0.030Ω POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

c9015

Abstract: mosfet L 3055 APT31N60BCS APT31N60BCSG APT31N60SCS APT31N60SCSG APT15D 18A100 R6015
Contextual Info: 600V 31A 0.100Ω APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET COOLMOS B TO Power Semiconductors -2 47 D3PAK • Ultra Low RDS(ON) (S) • Low Miller Capacitance • Ultra Low Gate Charge, Qg

8A Triac

Contextual Info: HTx8-600 VDRM = 600 V HTx8-600 IT RMS = 8.0 A 600V 8A TRIAC 1.T1 2. T2 3. Gate FEATURES TO-220 TO-220F 1 1  Repetitive Peak Off-State Voltage: 600V  R.M.S On –State Current (IT(RMS) = 8A)  High Commutation dv/dt 2 2 3 HTP8-600 3 HTS8-600 General Description

Contextual Info: APT60M75JFLL 600V POWER MOS 7 R 58A FREDFET 0.075Ω S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT6017JLL 600V POWER MOS 7 R MOSFET ID 27 2 T- D SO "UL Recognized" ISOTOP D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS VDSS S G ® Symbol 0.170Ω S Power MOS 7 is a new generation of low loss, high voltage, N-Channel

Contextual Info: I I Preliminary Data Sheet PD-2.543 02/98 International IQ R Rectifier 42CTQ030 SCHOTTKY RECTIFIER 40 Amp Major Ratings and Characteristics Characteristics lF AV Rectangular Description/Features 42CTQ030 Units 40 A 30 V wavQform The 4 2C TQ center lap Schottky rectifier has been optimized

1mbh

Abstract: YR39 D2050
Contextual Info: 1MBH70D-090A IGBT : Outline Drawings INSULATED GATE BIPOLAR TRANSISTOR SiQ3 : Features • ¡S B U M V y-i''?' • High Speed Sw itching Low Saturation Voltage • A X'h'f— hS i/t M O S -y—MHia #/jv§)y'C.y^— Small Package High Impedance Gate Gate

Contextual Info: 1DI300MP-050 300A : Outline Drawings ' < r7 - b ? it. PO W ER T R A N S IS T O R M O D U LE .h ai -,-ia-rJO-, •iNHS: : Features • h p E ^ 'S u High DC Current Gain B • Js iS W S iS liE ^ J^ : Applications >'< —$ • i/lffl'f General Purpose Inverter

Contextual Info: 1DI300MN-050 300A =? D .— )V POWER TRANSISTOR MODULE : F e a t u r e s • hpe^SV-' High DC Current Gain • flEftrofBtttt • S t t it t f t f t liE B r f ii • E l i i : A p p lic a t io n s • > J<— 9 General Purpose Inverter • Uninterruptible Power Supply

D147

Abstract: D149
Contextual Info: PD-2.242 International i l l ] Rectifier 2s c t q . s e r ie s SCHOTTKY RECTIFIER 30 Amp Description/Features Major Ratings and Characteristics The 25CTQ center tap Schottky rectifier series has been optimized for very low forward voltage drop, with moderate

MA3232

Abstract: BF123 CA3036 FT4017 2n1613 replacement A431 BF121 BVEBO-15V DIODE SJ 98 DM01B
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

transistor a640

Abstract: transistor A608 2SC632 transistor 2sC632 2SC634 L14B Pt-100W CA3036 DM02B FV918
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

CD430690

Abstract: tsm 1250 CD431490 C043 CD431090 L2t marking SOT 363 BP107 L120 scr CD430190 CD430290
Contextual Info: POWEREX INC m / 1SE D m s • 7214b51 DQ03bGl 7 ■ C D 43 x Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72 . 75 . 15 r.ar-^ 90 Dual SCR POW-R-BLOK Module

D476

Abstract: D-476
Contextual Info: PD -2.240 International [k ?r ]Rectifier i s c t q . s e r ie s SCHOTTKY RECTIFIER 15 Amp Major Ratings and Characteristics Description/Features Characteristics 15CTQ. Units ' f av Rectangular waveform 15 A 35 to 45 V lpsM @ tp -5 |js s in e 810 A VF

APT60S20

Abstract: APT20M34BLL APT20M34SLL
Contextual Info: APT20M34BLL APT20M34SLL 200V 74A 0.034Ω POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON