TJM SOT23 Search Results

TN2404K-T1-E3

Abstract: tn2404kt1e3 TN2404K BS107KL BS107KL-TR1 TN2404KL TN2404KL-TR1 TN2404K-T1
Contextual Info: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 -V D-S MOSFET PRODUCT SUMMARY Part Number VDS Min (V) TN2404K 240 TN2404KL/BS107KL FEATURES D D D D D rDS(on) (W) VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2.0 0.2 4 @ VGS = 10 V 0.8 to 2.0 0.3 BENEFITS

TO-92-18RM

Abstract: TN2404KL siliconix marking code BS107KL TN2404K BS107KL-TA TN2404KL-TA TN2404K-T1 marking code vishay SILICONIX 240v n-channel mosfet to-92
Contextual Info: TN2404K/TN2404KL/BS107KL New Product Vishay Siliconix N-Channel 240-V D-S MOSFET PRODUCT SUMMARY Part Number VDS Min (V) TN2404K 240 TN2404KL/BS107KL rDS(on) (W) VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2.0 0.2 4 @ VGS = 10 V 0.8 to 2.0 0.3 FEATURES BENEFITS

vishay siliconix code marking

Abstract: TN2404KL-TR1-E3 TO-92-18RM BS107KL TN2404K BS107KL-TR1 TN2404KL TN2404KL-TR1 TN2404K-T1 TN2404K-T1-E3
Contextual Info: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 -V D-S MOSFET PRODUCT SUMMARY Part Number VDS Min (V) TN2404K 240 TN2404KL/BS107KL FEATURES D D D D D rDS(on) (W) VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2.0 0.2 4 @ VGS = 10 V 0.8 to 2.0 0.3 BENEFITS

vishay siliconix code marking

Abstract: marking code vishay SILICONIX SILICONIX MARKING TN2404KT1E3 BS107KL TN2404K BS107KL-TR1 TN2404KL TN2404KL-TR1 TN2404K-T1
Contextual Info: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 -V D-S MOSFET PRODUCT SUMMARY Part Number VDS Min (V) TN2404K 240 TN2404KL/BS107KL FEATURES D D D D D rDS(on) (W) VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2.0 0.2 4 @ VGS = 10 V 0.8 to 2.0 0.3 BENEFITS

mosfet marking code N9

Abstract: Si2309CDS Si2309CDS-T1-E3
Contextual Info: New Product Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.345 at VGS = - 10 V - 1.6 0.450 at VGS = - 4.5 V - 1.4 VDS (V) - 60 Qg (Typ.) 2.7 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S • Halogen-free Option Available

tjm sot23

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor Designed for thick and thin—film circuits using surface mount com ponents and requiring low -noise, high-gain signal am plification at frequencies to 1.0 GHz. High Gain — G pe = 17 dB Typ @ f = 450 MHz

Si2309CDS

Abstract: marking code vishay SILICONIX sot-23
Contextual Info: New Product Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.345 at VGS = - 10 V - 1.6 0.450 at VGS = - 4.5 V - 1.4 VDS (V) - 60 Qg (Typ.) 2.7 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S • Halogen-free Option Available

tjm sot23

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency TVansistor D e sig n e d p rim a rily lo r u se in h ig h —g ain, lo w -n o is e a m plifier, o s c illa to r and m ixer a p p lic a tio n s . P a cka g e d fo r th ick o r th in film circ u its u sin g s u rfa c e m o u n t

Contextual Info: u fm _ LT1027 TECHNOLOGY P recision 5V R e fe re n c e FCnTURCS D C S C R IP T IO n • Very Low Drift: 2ppm/°C MaxTC ■ Pin Compatible with LT1021-5, REF-02, TO-5 and PDIP Packages Only ■ Output Sources 15mA, Sinks 10mA ■ Excellent Transient Response Suitable for

Contextual Info: New Product Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.345 at VGS = - 10 V - 1.6 0.450 at VGS = - 4.5 V - 1.4 VDS (V) - 60 Qg (Typ.) 2.7 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S • Halogen-free Option Available

Contextual Info: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS (V) RDS(on) () VGS(th) (A) 240 4 at VGS = 10 V 0.8 to 2 ID (A) 0.2 TN2404K TN2404K, BS107KL • • • • • Qg (Typ.) 0.3 4.87 nC Low On-Resistance: 4 

S1217

Abstract: TO-92-18RM
Contextual Info: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS (V) RDS(on) () VGS(th) (A) 240 4 at VGS = 10 V 0.8 to 2 ID (A) 0.2 TN2404K TN2404K, BS107KL • • • • • Qg (Typ.) 0.3 4.87 nC Low On-Resistance: 4 

Contextual Info: New Product Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.345 at VGS = - 10 V - 1.6 0.450 at VGS = - 4.5 V - 1.4 VDS (V) - 60 Qg (Typ.) 2.7 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S • Halogen-free Option Available

Contextual Info: New Product Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.345 at VGS = - 10 V - 1.6 0.450 at VGS = - 4.5 V - 1.4 VDS (V) - 60 Qg (Typ.) 2.7 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S • Halogen-free Option Available

SI2309cds-t1

Abstract: Si2309CDS tjm sot23
Contextual Info: New Product Si2309CDS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.345 at VGS = - 10 V - 1.6 0.450 at VGS = - 4.5 V - 1.4 VDS (V) - 60 Qg (Typ.) 2.7 nC APPLICATIONS • Load Switch TO-236 (SOT-23) G 1 3 S • Halogen-free Option Available

A5SHB

Contextual Info: MOSFET SMD Type P-Channel MOSFET KI2305 DS SOT-23-3 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features ● VDS V = -8V ● RDS(ON)＜0.108 Ω (VGS = -1.8V) 1 D 0.55 ● RDS(ON)＜0.071 Ω (VGS = -2.5V) +0.1 1.3-0.1 +0.1 2.4-0.1 ● RDS(ON)＜0.052 Ω (VGS = -4.5V)

Contextual Info: SSS2312A N-Channel Enhancement Mode MOSFET Product Summary VDS V SOT-23 RDS(ON) (mΩ) Max ID (A) D 33 @VGS = 4.5V 3.77A 20V G 40 @VGS = 2.5V S 51 @VGS = 1.8V D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.

a5shb

Contextual Info: MOSFET SMD Type P-Channel MOSFET KI2305 SOT-23-3 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON ＜0.250 Ω (VGS = -1.8V) 0.55 ● RDS(ON)＜0.100 Ω (VGS = -2.5V) +0.2 1.6 -0.1 +0.2 2.8-0.2 ● RDS(ON)＜0.065 Ω (VGS = -4.5V) 0.4 3 ● VDS (V) = -20V

A6SUB

Contextual Info: IC MOSFET SMD Type N-Channel 30-V D-S MOSFET KI2306 DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 100% Rg Tested 0.4 3 TrenchFET Power MOSFET 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 G S +0.1 0.38-0.1 +0.1

Si2306DS

Contextual Info: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V "3.5 0.094 @ VGS = 4.5 V "2.8 – TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si2315DS

Abstract: Si2315DS-T1
Contextual Info: Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.055 @ VGS = - 4.5 V "3.5 0.075 @ VGS = - 2.5 V "3 0.118 @ VGS = - 1.8 V "2 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2315DS-T1 Top View

A96V

Abstract: Si2326DS
Contextual Info: Si2326DS New Product Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 100 0.250 @ VGS = 10 V 1.5 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2326DS (D6)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

sss02

Abstract: tjm sot23
Contextual Info: SSS0201 N-Channel Enhancement Mode MOSFET Product Summary RDS ON (Ω) Max ID (A) D 01 02 VDS (V) SOT-23 YW 1.3 @VGS =10V 0.5A 20V G 1.6 @VGS = 4.5V S D FEATURES ȟ!Super high dense cell design for low RDS(ON). G ȟ!Rugged and reliable. ȟ!SOT-23 package.

SPF10

Contextual Info: SSS2202 N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) (m ) Max D 200 @VGS = 4.5V 20V 1.4A G 300 @VGS = 2.5V S D FEATURES Super high density cell design for low RDS(ON). G Rugged and reliable. SOT-23 package. S Pb Free. o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)