TK65G10N1 Search Results
TK65G10N1 Price and Stock
Toshiba America Electronic Components TK65G10N1,RQMOSFET N-CH 100V 65A D2PAK |
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TK65G10N1,RQ | Digi-Reel | 1 |
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Toshiba America Electronic Components TK65G10N1,RQ(STrans MOSFET NCH 100V 136A 3Pin D2PAK (Alt: TK65G10N1,RQ(S) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TK65G10N1,RQ(S | 143 Weeks | 1,000 |
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TK65G10N1 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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TK65G10N1 |
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Japanese - Transistors - Mosfets | Original | 344.93KB | 9 | |||
TK65G10N1 |
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Transistors - Mosfets | Original | 246.45KB | 9 | |||
TK65G10N1,RQ |
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FETs - Single, Discrete Semiconductor Products, MOSFET N CH 100V D2PAK | Original | 9 |
TK65G10N1 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TK65G10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK65G10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) |
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TK65G10N1 | |
Contextual Info: TK65G10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK65G10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) |
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TK65G10N1 | |
Contextual Info: TK65G10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK65G10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) |
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TK65G10N1 | |
Contextual Info: TK65G10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK65G10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) |
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TK65G10N1 | |
Contextual Info: TK65G10N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK65G10N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 3.8 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 100 V) |
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TK65G10N1 | |
fast tlp785
Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
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SCE0024F fast tlp785 TK10A60D 5252 F solar tcv7116 TPH1400ANH | |
toshiba laptop charging CIRCUIT diagram
Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
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BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120 | |
TK12A10K3
Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
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gt50jr22
Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
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SCE0024G gt50jr22 fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W |