TL 187 TRANSISTOR Search Results

transistor tl 187

Abstract: TL 187 360-2002 TL 187 TRANSISTOR TRANSISTOR 187 TRANSISTOR 187 datasheet Series TL
Contextual Info: Series TL Ultraminiature «TO 5 transistor size» magnetic latching relays 28 V / 1 A APPLICATION SPECIFICATIONS MIL-R-39016/12 -/29 -/30 ESCC 3602-002 „ General characteristics N° of pole 2 Pdt 0,4 cm 3 Volume Mass 2 g with leads 38 mm[1.500] lenght 1,6 g with leads 4,75 mm[.187] lenght

G-184

Contextual Info: S E M I C O N D U C T O R High-Speed Driver With JFET Switch GENERAL DESCRIPTION FEATURES The D G 180 thru D G 191 series o f analog gates co nsist of 2 or 4 N -channel junction-type fie ld -e ffe ct transistors JFET designed to function as ele ctro n ic sw itches. Level-shifting

NTE192

Abstract: NTE192A PNP transistor 263 NTE193A NTE193
Contextual Info: NTE192 NPN & NTE193 (PNP) NTE192A (NPN) & NTE193A (PNP) Silicon Complementary Transistors Audio Power Output Description: NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary transistors in a TO92HS type package designed for use in general purpose industrial circuits. These

2N6284 inverter schematic diagram

Abstract: NTD18N06 MKP9V160 sine wave inverter tl494 circuit diagram ECL IC NAND adp3121 DARLINGTON TRANSISTOR ARRAY ezairo MC74HC4538 TIP142 6403 F
Contextual Info: ON Semiconductor Master Components Selector Guide AC−DC Controllers and Regulators; Amplifiers and Comparators; Analog Switches; Bipolar Transistors; Clock and Data Distribution; Clock Generation; Custom; DC−DC Controllers, Converters, and Regulators; Digital

marking 93A

Contextual Info: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type

2SA661

Abstract: RH-16 Produced by Perfect Crystal Device Technology
Contextual Info: 2 s a 661 S /U D ^ P N P Il^ ^ /W & h ^ S t t W C T E S C ^ IL IC O N PNP EPITAXIAL TRANSISTOR PCT PROCESS) O Unit in O D river ° High Stag© and V oltage A m plifier A m plifier A pplications A pplications -50 V CEO e>a t 5 0Q7 fff%. => IX 9 S W •' P c = 6 0 0 m W ( T a = 8 5 ' C )

FES100

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’tre n c h ’ technology. The device features very

Contextual Info: 30E d • Goaiaas ? ■ SCS-THOMSON HkHOT «! ^ 1 A -Z 3 > BFY50-B FY51 BFY52 S G S-THOMSON MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on B U K7508-55 T r e n c h M O S transistor S t a n d a r d level F E T G E N E R A L DE SCRIPTION N-channel enhancement mode standard level tield-ettect power transistor in a plastic envelope using

Contextual Info: 10aucti, Dnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Designer's Data Sheet TMOS E-FET ™ MTP4N80E Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination

Contextual Info: Intersil Hlgh-Rellablllty Products DG180-191 High Relid|Sfffy High- Speed Driver 0 \ 3P ^ With JFET Switch GENERAL DESCRIPTION FEATURES The DG180 thru DG191 series of analog'jfates consist of g^s 2 or 4 N-channel junction-type field-effect transistors JFET

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Sta nd ard level FET G E N E R A L DESCRI PTIO N N-channel enhancement mode standard level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using

K950

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on B U K9508-55 T r e n c h M O S transistor L o g i c level F E T G E N E R A L DE SCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope using ’t re n ch ’

transistor tl 187

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor L o g i c level F E T G E N E R A L DESCRI PTIO N N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable tor surtace

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor L o g i c level F E T G E N E R A L DESCRI PTIO N N -channel enhancem ent m ode logic level tie ld -e tte ct pow er tran sistor in a plastic envelope suitable tor surtace

irf 3110

Abstract: IRF3503 irf350 IRf 334 IRf 92 0151 irf352 C055
Contextual Info: MOTOROLA SEM ICONDUCTOR IRF350 IRF351 IRF352 TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR These TMOS P o w e r FETs are d e sig n e d fo r h ig h voltage, high speed p o w e r s w itc h in g a p p lica tio n s such as sw itch in g regulators,

TL 187 TRANSISTOR PNP

Abstract: BA672 TL 188 TRANSISTOR PNP TL 188 TRANSISTOR PIN DIAGRAM aafe
Contextual Info: BA6722 BA6722 h 7 > v * £ * < y K -7 < / \ V Transistor Switch Driver / Series Regulator BA6722 l i , v 'J - X U i 1CT ' t <, 2 0 0 5V U + ' z l U - S • W ^ T ^ S / D im e n s io n s (Unit : mm PNP I ! ï § T '8 t / 3 c è f t T t 'Î l'o Vcc ü(7) PNP h 7 > v X * £ f f l l ' T * ] « l ê Î l Î t o

Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL60N360 VCES = 3600V IC110 = 36A VCE sat  3.4V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

TL 188 TRANSISTOR PIN DIAGRAM

Abstract: PEAK DETECTOR System on a chip TRANSISTOR CODE SA5
Contextual Info: Philips Semiconductors Product specification Postamplifier with link status indicator DESCRIPTION SA5214 PIN CONFIGURATION The SA 5 2 1 4 is a 75M H z postamplifier system designed to accept low level high-speed signals. These signals are converted into a

c 3198 transistor

Abstract: 2N6383 IC 6648 2N6648 2n6385 sc 3198 transistor
Contextual Info: MOTOROLA SC XSTR S/ R F 12E D I b3b?5S4 □ 004 3MG 1 r -5 3 '^ 9 r -3 3 '3 / MOTOROLA SEMICONDUCTOR TECHNICAL DATA 15 A M P E R E P E A K COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . m o n o lith ic com plem en tary silicon Darlington transistors designed

10N15L

Abstract: 10N12L mtp10n12 MTM10N15L p10n15l
Contextual Info: MOTOROLA • i SEM ICO NDUCTOR TECHNICAL DATA M TM 10N 12L M TM 10N 15L M T P 10N 12L M T P 10N 15L Designer's Data Sheet P o w er Field E ffe c t Transistors N-Channel Enhancem ent-M ode Silicon G ate TM O S T h e s e L o g ic L e ve l T M O S P o w e r FETs a re d e s ig n e d fo r h ig h

LM337H

Abstract: LM337HVKSTEEL LM337HVK-STEEL LM337HV
Contextual Info: LM137HV/LM337HV 3-Terminal Adjustable Negative Regulators High Voltage General Description Features The LM137HV/LM337HV are adjustable 3-terminal nega­ tive voltage regulators capable of supplying in excess of -1 .5 A over an output voltage range of -1 .2 V to -4 7 V .

LM337H

Abstract: LM337HVKSTEEL LM337HVK-STEEL 7b347 VOLTAGE REGULATOR IC LM SERIES LM117
Contextual Info: SflE ]> NATL SEMICOND LINEAR LM137HV/LM337HV 3-Terminal Adjustable Negative Regulators (High Voltage) General Description Features The LM137HV/LM337HV are adjustable 3-terminal nega­ tive voltage regulators capable of supplying in excess of -1 .5 A over an output voltage range of -1 .2 V to -4 7 V .

HA17358 equivalent

Abstract: M51977 IC ha17555 SG3524 application notes speed control Automatic Voltage Regulator Circuit transistor audio fp 1016 ha17555 ic SG3524 application notes in push pull HA17555FP MB3769
Contextual Info: Hitachi Standard Linear ICs DATA BOOK ADE-404-002A 2nd Edition 09/98 Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of