TL176 Search Results

Contextual Info: LINEAR INTEGRATED CIRCUITS TYPE TL176C NORMALLY OFF SILICON HALL-EFFECT SWITCH B U L L E T I N N O . D L -S 1 2 7 2 9 , O C T O B E R 1 9 7 9 • Magnetic-Field-Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Solid-State Technology • Open-Collector Output

TESLA transistor

Abstract: magnetic flux density for different material TESLA Manufacturer 106B TL176C tesla switch
Contextual Info: LINEAR INTEGRATED CIRCUITS TYPE TL176C NORMALLY OFF SILICON HALL-EFFECT SWITCH B U L L E T I N N O . D L -S 1 2 7 2 9 , O C T O B E R 1 9 7 9 • Magnetic-Field-Sensing Hall-Effect Input • O n-O ff Hysteresis • Small Size • Solid-State Technology •

TL272

Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use

TLP596A

Abstract: TLP596B TLP176D TLP176G TLP197G TLP200D TLP206A TLP270D TLP270G TLP3110
Contextual Info: [ 7 ] エンボステーピング包装仕様 [ 7 ] エンボステーピング包装仕様 面実装用リードフォーミング, 面実装用リードフォーミング エンボステーピング包装仕様 1. パッケージ分類 テーピング名称

transistor c124

Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300
Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use

Contextual Info: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.

Contextual Info: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to

TL306

Abstract: TL184 TL167 TL307
Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use

UAF771

Abstract: SN75494N RC555DN SN75450BN CA555CG SN75492AN MC1709CL SN75491AN SN75493N SN75469J
Contextual Info: Linear C irc u its C r o s s R e fe re n ce G u id e D EV ICE TYPE 1458E 1458P 1488DC 1 4 8 8 PC 1489ADC 1489APC 1489DC 1489PC 1558E 55107ADM 55107BDM 55108ADM 55108BDM 55109DM 5 5 1 10DM 551 21 D M 55122DM 55207DM 55208DM 55224DM 55225DM 55232DM 55233DM 55234DM