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    TL822 Search Results

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    TL822 Price and Stock

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    Honeywell Sensing and Control 1TL82-2

    SWITCH TOGGLE SPST 15A 125V
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    DigiKey 1TL82-2 Bulk 50
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    • 100 $113.11
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    Mouser Electronics 1TL82-2
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    • 100 $119.39
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    RS 1TL82-2 Bulk 48 Weeks 50
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    • 100 $135.13
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    Master Electronics 1TL82-2
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    • 100 $84.39
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    NIC Components Corp NSTL822M500V90X191F

    - Boxed Product (Development Kits) (Alt: NSTL822M500V90X191)
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    Avnet Americas NSTL822M500V90X191F Box 8
    • 1 $183.88
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    • 100 $169.55
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    Vishay Intertechnologies TL8W9226M010C

    Tantalum Capacitors - Solid SMD 22uF 10Volts 20% W9 Case Molded
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    TTI TL8W9226M010C Reel 3,000
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    Vishay Intertechnologies TL8A0227M004C

    Tantalum Capacitors - Solid SMD 220uF 4Volts 20% A0 Case Molded
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    TTI TL8A0227M004C Reel 2,500
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    IBM 00TL822

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    Bristol Electronics 00TL822 107
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    TL822 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TL817

    Abstract: TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805
    Contextual Info: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in


    Original     		PTFB241402F PTFB241402F H-37248-4 TL817 TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805 PDF

    TL872

    Abstract: TB825 TL 873 TL-872 TL-861 TL812 TB845 tl837 TL-825 tl840
    Contextual Info: BROADBAND SERIES TI^8/TB-8-A SP8T SWITCH REFLECTIVE AND ABSORPTIVE 0.02-18 GHz i GENERAL SPECIFICATIONS: Frequency Coverage: RF Impedance: RF Power: DC Requirements: Temperature Information: Switching Speed: Environment: Connectors: 0.02 to 18.0 GHz. 50 OHMS.


    OCR Scan     		PDF

    C909

    Abstract: tL920 TL823 TL817 PTFB241402F
    Contextual Info: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular ampliier applications in


    Original     		PTFB241402F PTFB241402F H-37248-4 C909 tL920 TL823 TL817 PDF

    TL817

    Abstract: TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945
    Contextual Info: PTFB241402F Customer-Specific Spec — Not for General Release High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in


    Original     		PTFB241402F PTFB241402F H-37248-4 TL817 TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945 PDF