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TLP58I Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: TOSHIBA {D IS CRET E/ OP TO } 9097250 TOSHIBA TT <DISCRETE/OPTO De \| TDT7SS0 0017477 99D 17477 D T-W-X3 TLP580, TLP58I GaAlAs Infrared Emitting Diode & NPN Silicon Photo-Transisotr The TOSHIBA TLP580 and TLP581 consists of a gallium aluminum arsenide, infrared emitting diode coupled with a silicon photo transistor in a	OCR Scan	TLP580, TLP58I TLP580 TLP581 1200Vdc 750Vac 900Vdc DIN40045 0D1747Ã	PDF
TLP581 Abstract: TLP580 100KC E67349 VDE0730-2P Contextual Info: TLP580, TLP58I G aAlAs I n frared Emi t t i n g Diode & N P N Silicon P hoto - T r a n s i s o t r The TOSHIBA TLP580 and TLP581 consists of a gallium aluminum arsenide, infrared emitting diode coupled with a silicon photo transistor in a dual in-line package. TLP580 is no-base internal connection for highEMI environments,	OCR Scan	TLP580, TLP58 TLP580 TLP581 1200Vdc 750Vac 900Vdc DIN40045 100KC E67349 VDE0730-2P	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: TOSHIBA {D IS CRET E/ OP TO } 9097250 TOSHIBA TT <DISCRETE/OPTO De | TDT7SS0 0017477 99D 17477 D T-W-X3 TLP580, TLP58I GaAlAs Infrared Emitting Diode & NPN Silicon Photo-Transisotr The TOSHIBA TLP580 and TLP581 consists of a gallium aluminum arsenide, infrared emitting diode coupled with a silicon photo transistor in a

OCR Scan

TLP580, TLP58I TLP580 TLP581 1200Vdc 750Vac 900Vdc DIN40045 0D1747Ã

PDF

TLP581

Abstract: TLP580 100KC E67349 VDE0730-2P
Contextual Info: TLP580, TLP58I G aAlAs I n frared Emi t t i n g Diode & N P N Silicon P hoto - T r a n s i s o t r The TOSHIBA TLP580 and TLP581 consists of a gallium aluminum arsenide, infrared emitting diode coupled with a silicon photo transistor in a dual in-line package. TLP580 is no-base internal connection for highEMI environments,

OCR Scan

TLP580, TLP58 TLP580 TLP581 1200Vdc 750Vac 900Vdc DIN40045 100KC E67349 VDE0730-2P

PDF