TME 126 Search Results

PSS-04-103

Abstract: saab space packet wire TME 87 PSS-04-151 P-ASIC-NOT-00122-SE PSS-04-106 K1784 TME 57 PSS-04-107 SAAB
Contextual Info: Saab Space AB Dokument ID Document ID Frisläppt datum Date Released Utgåva Issue Informationsklass Classification P-ASIC-NOT-00122-SE 2007-04-23 12 Company Restricted Sida Page 2 SUMMARY The SCTMTC ASIC User's Manual defines how the SCTMTC ASIC is to be used.

tme 126

Contextual Info: HB56UW272E-7B/8B 2,097,152-Word x 72-Bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8BYTE DIMM HITACHI Preliminary - Rev. 0.0 Feb. 02, 1996 Description The HB56UW272E belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been

tme 126

Abstract: TME 87 I 24C026 s/ksmh12/2.27/30/24C0G
Contextual Info: HB56HW164DB-6B/7B 1,048,576-Word x 64-Bit High Density Dynamic RAM Module HITACHI Preliminary Rev 0.0 Apr. 18, 1996 Description The HB56HW164DB is a 1M x 64 dynamic RAM Small Outline Dual In-line Memory Module S.O.DIMM , mounted 4 pieces of 16-Mbit DRAM (HM51W16165BTT) sealed in TSOP package and 1

Contextual Info: EDI8F64128C ^ E D I 128KX64 SRAM Module ELECTRONIC D£StGN& NC.I 128KX64 Static RAM High Speed CMOS Cache Module Features 1 M Byte Secondary C ach e Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based System s

diode y4p

Abstract: MTD20N03HDL MJ200
Contextual Info: MOTOROLA SEMICONDUCTOR TECHN!GAL DATA Product Preview HDTMOSTM E-FETTM High Density Power FET MTD20N03HDL This advanced high-cell density HDTMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also

IDQ25186

Abstract: MA721 VSS1641NC IMX72 Li-49 39NC60 motorola bq50
Contextual Info: Order ttis document by 5VFPMB72D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1Mx72 DRAM Dual-In-Line Memory Module DIMM 5 V, FPM, Buffered For Error Correction Code Applications 8 Megabyte . JEDEC–Standard ● Single 5 V Power Supply, ~L_Compatible ● Fast Page Mode (FPM)

saab space packet wire

Abstract: 7693A tme 126 AT7909E LA 7693 AT7909EKA-E CPDU MH1RT SMART ASIC 197 telemetry command protocol
Contextual Info: Features • • • • • • • • • • System-on-chip technology to handle all ground link communication Can be operated independently from a processor Re-definable by the use of different mission PROM Supports multiple sources of CPDU segments Packet wire or Space Wire control interface for all chip accesses

TME 87

Abstract: tme 126
Contextual Info: Features • • • • • • • • • • System-on-chip technology to handle all ground link communication Can be operated independently from a processor Re-definable by the use of different mission PROM Supports multiple sources of CPDU segments Packet wire or Space Wire control interface for all chip accesses

tme 126

Abstract: 64128C CZ 121 connector tme+126
Contextual Info: ^ED I EDI8F64128C EL£CTCOn C d c s g n s . n e l 128Kx64 SRAM Module 128KX64 Static RAM Highspeed CMOS Cache Module Features 1MByte Secondary C ache Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium B a se d System s

Contextual Info: EDI8F32258C 1256Kx32 SRAM Module fe a tu re s 256Kx32 Static RAM CMOS, High Speed Module 256Kx32 bit CMOS Static The EDI8F32258C is a high speed 8 megabit Static RAM Random Access Memory module organized as 256K words by 32 bits. This module is • Access Times

939 Processor Functional

Abstract: RT611 R924
Contextual Info: TABLE OF CONTENTS Paragraph Number Tit|e Page Number Section 1 Introduction 1.1 1.2 1.3 1.4 1.5 1.6 1.6.1 1.6.2 1.7 1.8 1.9 Features. MC68030 Extensions to the M68000 F a m ily.

MC68030

Abstract: tme 126 M68000 MC68020 MC68851 939 Processor Functional
Contextual Info: TABLE OF CONTENTS Paragraph Number Tit|e Page Number Section 1 Introduction 1.1 1.2 1.3 1.4 1.5 1.6 1.6.1 1.6.2 1.7 1.8 1.9 Features. MC68030 Extensions to the M68000 F a m ily.

tme 126

Abstract: T092 ZRA125 B25C tme+126
Contextual Info: PRECISION 1.25 VOLT MICROPOWER VOLTAGE REFERENCE ZRA125 \ L ISSUE 1- OCTOBER 1995 FEATURES DEVICE DESCRIPTION The ZRA125 uses a bandgap circuit design to achieve a precision micropower voltage reference of 1.25 volts. The device is available in small outline surface mount packages, ideal

tme 126

Abstract: transistor TT 2442 MGW12N120D 3EML
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGW12N120D/D DATA e Product Preview Data Sheet Insulated Gate BipoMar Transistor with Anti-Parallel Diode N-Channel Enhancement Mode Silicon Gate Ttis Insulated Gate Bipolar Transistor lGB~ is cqackaged

AVR 32BIT

Abstract: AT90SC19264RC AT90SC6404RT CRC-16 ISO7816 SA10 SF10 TPG0053A trojan uv sim card cloning device
Contextual Info: General Business Use AT90SC6404RT Security Target Lite General Business Use TPG0053A 24 Nov 04 Atmel makes no warranty for the use of its products, other than those expressly contained in the Company’s standard warranty which is detailed in Atmel’s Terms and Conditions located on the Company’s web site. The Company assumes no responsibility for any errors

5998CCSF

Contextual Info: SMA Phase Adjustable In-Series Adapters Female to Male Phase Adjustable Adapter GDI Part No. Max. VSWR 5018CCSF See Graph Below; D C -26.0 GHz 1 Center conductor is captivated rr,e * s- -J~! • “ 'YigCCSF is a coaxial phase -> “ a J i!'-er: inserted in an SMA

MA644CT10TADG60

Abstract: TK 69 TSOP QN90
Contextual Info: Order thie document by3VFPMU64D~ MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4Mx64 I DRAM Dual-In-Line Memory Module DIMM 3.3 V, FPM, Unbuffered I I 32 Megabyte ● JEDEC–Standard ● Single 3.3 V Power Supply, LWL<ompatible 168–Lead Dual–In-Line ● Memory Module (DIMM)

TME 87

Abstract: 1ZD12 tme 126 30 oc9 002
Contextual Info: ^EDI EDI8F6432C ß fC T R O M C D ESGNS. M C 32Kx64 SRAM Module 32Kx64 Static RAM High SpeedCMOS Cache Memory/Module Features 256KB Secondary Cache Module The EDI8F6432C is a high speed 256KB secondary cache • For use with Intel Pentium Based Systems module which is ideal for use with many Intel Pentium CPU-based

OP145C

Abstract: K6550
Contextual Info: @ OPTEK Product Bulletin OP145A June 1996 GaAs Plastic Infrared Emitting Diodes Types OP145A, OP145B, OP145C, OP145D Features • Wide irradiance pattern • Mechanically and spectrally matched to the OP555 and OP565 series devices • Variety of power ranges

opo7c

Abstract: 0P07C 0P-07C 0p07 OP07CN8 op 070 0P07D 0P-07 opo7c0cto u1 741 opamp
Contextual Info: X X u n e A B TECHNOLOGY _ QP-07 Precision Operational Amplifier F€OTUR€S DCSCRIPTIOfl • Guaranteed 2 5 m V max. Offset Voltage ■ Guaranteed 0.6/zV/°C max. Offset Voltage Drift with Temperature ■ Excellent 1.0/xV/Month max. Long Term Stability

opo7c

Abstract: 0P07C
Contextual Info: ÆL—f r r u i m i TECHNOLOGY _QP-07 Precision Operational Amplifier F€flTUR€S DCSCRIPTIOn • Guaranteed 25^ V max. Offset Voltage ■ Guaranteed 0.6/zV/°C max. Offset Voltage Drift with Temperature ■ Excellent I.O^V/Month max. Long Term Stability

tme 126

Abstract: MGW12N120 IC9012 Bipolar WPC
Contextual Info: MOTOROLA SEMICONDUCTOR = TECHNICAL DATA Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate MGW12N120 This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability.

TME 87 0D

Contextual Info: SIEMENS 3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module HYM64V8005GU-50/-60 HYM64V8045GU-50/-60 HYM72V8005GU-50/-60 HYM72V8045GU-50/-60 168pin unbuffered DIMM Module with serial presence detect * 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module

MC68HCO5

Abstract: MC68HC058 MC68HCD Elap 72 pin MAA 723
Contextual Info: I: I : . L rrA3 *0+’ MC68HC05i8 P & ADVANCE INFORMATION @ MOTOROLA TMs document contiins inforfi~tiorihn a new product Specifications and information herein are subjeti to change without notice. .! .\\, .>. ,.:$ .,1.:.$ . .>,+. ‘~f~ -:t, -, ,>.i\.!