TMT400 Search Results

tranformer

Contextual Info: ELECTRICAL CHARACTERISTICS: TMT40002AS TMT40005AS TMT40006AS TMT40007AS TMT40008AS TMT40009AS TMT40010AS TMT40011AS TMT40012AS TMT40013AS TMT40014AS SCHEMATIC FEATURES: SMD Style APPLICATIONS: Wide Band RF Tranformer for Set-Top Box and Cable Modem Application

Contextual Info: ELECTRICAL CHARACTERISTICS: Turns Ratio: 1:1±2% @100KHz,50mV Inductance: Pri 40uH Min @100KHz,50mV Leakage Inductance: 0.10uH Max @100KHz,50mV Interwinding Capacitance: 5pF Max @100KHz,50mV Primary Pins: 1-5 .500 MAX .250 MAX .100 5 6 1 2 5 TMT40011CT 6

Contextual Info: ELECTRICAL CHARACTERISTICS: Turns Ratio: 1:1.73CT±2% @100KHz,50mV Inductance: Pri 50uH Min @100KHz,50mV Leakage Inductance: 0.1uH Max @100KHz,50mV Interwinding Capacitance: 12pF Max @100KHz,50mV Primary Pins: 4-6 1 2 3 3 4 2 TMT40006CT .275 MAX YYTMWW .300

Transformer

Contextual Info: ELECTRICAL CHARACTERISTICS: Turns Ratio: 1:4CT±2% @100KHz,50mV Inductance: Pri 150uH Min @100KHz,50mV Leakage Inductance: 0.30uH Max @100KHz,50mV Interwinding Capacitance: 15pF Max @100KHz,50mV Primary Pins: 2-6 .300 MAX 6 4 2 TMT40005CT YYTMWW 5 3 YY-YEAAR

Contextual Info: ELECTRICAL CHARACTERISTICS: Turns Ratio: 1:2CT±2% @100KHz,50mV Inductance: Pri 19uH Min @100KHz,50mV Leakage Inductance: 0.06uH Max @100KHz,50mV Interwinding Capacitance: 10pF Max @100KHz,50mV Primary Pins: 1-5 6 5 .500 MAX .250 MAX .100 4 2 1 6 5 TMT40012CT

Contextual Info: ELECTRICAL CHARACTERISTICS: Turns Ratio: 1:2CT±2% @100KHz,50mV Inductance: Pri 19uH Min @100KHz,50mV Leakage Inductance: 0.06uH Max @100KHz,50mV Interwinding Capacitance: 10pF Max @100KHz,50mV Bandwidth 75 Ohms System 0.250-500MHz TYP Primary Pins: 4-6

C245

Abstract: NIT6
Contextual Info: Hill ELECTRICAL CHARACTERISTICS: Turns Ratio: 1:1 ±2% @100KHz,50mV Inductance: Pri 40uH Min @100KHz,50mV Leakage Inductance: 0.10uH Max @100KHz,50mV Interwinding Capacitance: 10pF Max @100KHz,50mV Bandwidth 75 Ohms System 0.20-340MHz TYP Primary Pins: 4-6

MAGNETICS

Contextual Info: ELECTRICAL CHARACTERISTICS: mu Transtek M agnetics Inductance: 40uH Min @100KHz,50mV@25°C Inductance: 19uH Min @100KHz,50mV@-40°C PRI:SEC Turns Ratio: 1:2CT±2% @100KHz,50mV Bandwith75 OhmsSystem: 0.250~500MHz TYP Leakage lnductance:0.110uH Max @100KHz,0.5mV

Contextual Info: ELECTRICAL CHARACTERISTICS: Inductance: 40uH Min @100KHz,50mV@25°C Inductance: 19uH Min @100KHz,50mV@-40°C PRI:SEC Turns Ratio: 1CT:1CT±2% @100KHz,50mV Bandwith75 OhmsSystem: 0.200~340MHz TYP Leakage lnductance:0.10uH Max @100KHz,0.5mV Interwinding Capacitance: 10pF Max @100KHz,50mV

Contextual Info: ELECTRICAL CHARACTERISTICS: Inductance: 100uH Min @100KHz,50mV @25°C Inductance: 40uH Min @100KHz,50mV @-40°C PRI:SEC Turns Ratio: 1:1 ±2%@100KHz,50mV Bandwith75 OhmsSystem: 0.200~340MHz TYP Leakage lnductance:0.110uH Max @100KHz,0.5mV Interwinding Capacitance: 10pF Max @100KHz,50mV

Contextual Info: ELECTRICAL CHARACTERISTICS: Inductance: 40uH Min @100KHz,50mV@25°C Inductance: 19uH Min @100KHz,50mV@-40°C PRI:SEC Turns Ratio: 1:2CT±2% @100KHz,50mV Bandwith75 Ohms System: 0.25~500MHz TYP Leakage lnductance:0.110uH Max@100KHz,0.5mV Interwinding Capacitance: 12pF Max @100KHz,50mV

Contextual Info: ELECTRICAL CHARACTERISTICS: Turns Ratio: 1:2CT±2% @100KHz,50mV Inductance: Pri 19uH Min @100KHz,50mV Leakage Inductance: 0.06uH Max @100KHz,50mV Interwinding Capacitance: 10pF Max @100KHz,50mV Bandwidth 75 Ohms System 0.250-500MHz TYP Primary Pins: 4-6

Contextual Info: ELECTRICAL CHARACTERISTICS: Turns Ratio: 1:1±2% @100KHz,50mV Inductance: Pri 40uH Min @100KHz,50mV Inductance: at -40ºC 30uH Min @100KHz,50mV Leakage Inductance: 0.12uH Max @100KHz,50mV Interwinding Capacitance: 13pF Max @100KHz,50mV Primary Pins: 2-6

Contextual Info: ELECTRICAL CHARACTERISTICS: Turns Ratio: 1:1±2% @100KHz,50mV Inductance: Pri 45uH Min @100KHz,50mV Inductance: at -40ºC 30uH Min @100KHz,50mV Leakage Inductance: 0.12uH Max @100KHz,50mV Interwinding Capacitance: 13pF Max @100KHz,50mV Primary Pins: 2-6

Contextual Info: ELECTRICAL CHARACTERISTICS: Turns Ratio: 1:2CT±2% @100KHz,50mV Inductance: Pri 35uH Min @100KHz,50mV Inductance: at -40ºC 20uH Min @100KHz,50mV Leakage Inductance: 0.12uH Max @100KHz,50mV Interwinding Capacitance: 10pF Max @100KHz,50mV Primary Pins: 2-6

Contextual Info: Hill ELECTRICAL CHARACTERISTICS: Turns Ratio: 1:1CT±2% @100KHz,50mV lnductance:1.2mH Min @100KHz,50mV @25°C Leakage Inductance: 0.50uH Max @100KHz,50mV Interwinding Capacitance: 25pF Max @100KHz,50mV DC Resistance: Pri/Sec 0.70 Ohms Max @25°C Primary Pins: 1-2

HRC fuse gg GEC

Abstract: GEC Alsthom HRC GEC Alsthom bs88 PART 2 Type T 3 phase, 415v and 270 kw motor GEC Alsthom 32M35 321 tlt 149 bs88 zs levels TXU1000 TKF315
Contextual Info: Type T HRC Fuse Links 1—B— -E Type Rating Ust ' number Oimensi ons mm illimetres x B A E D F NIT 2 NIT2 4 NIT4 Extended MotorRange 20M25 A 20M32f 6 NIT6 2-20A 10 NIT16 20 NIT20 20M32 36 50 13 90 Rating 55 60 11 10 }— Extended Motor Range 32M35-32M63f

Contextual Info: ELECTRICAL CHARACTERISTICS: Tx Inductance: 100uH Min @100KHz.50mV @25°C Rx Inductance : 100uH Min @100KHz 50mV @25°C Tx Inductance: 40uH Min @100KHz.50mV @-40°C Rx Inductance : 40uH Min @100KHz 50mV @-40°C Tx Turns Ratio : 1CT:1CT±2% Rx Turns Ratio : 1:1 ±2%

Contextual Info: ELECTRICAL C H A RA CTERISTICS: Turns Ratio: 1:1 ±2% @ 100KHz,50mV Inductance: Pri 40uH Min @ 100KHz,50mV Leakage Inductance: 0.10uH Max @ 100KHz,50mV Interwinding Capacitance: 10pF Max @ 100KHz,50mV Bandwidth 75 Ohms System 0.20-340M Hz TYP Primary Pins: 4-6

Contextual Info: ELECTRICAL CHARACTERISTICS: Tx Inductance: 100uH Min @100KHz.50mV @25°C Rx Inductance: 100uH Min @100KHz.50mV @25°C Tx Inductance: 40uH Min @100KHz.50mV @-40°C Rx Inductance: 40uH Min @100KHz.50mV @-40°C Tx Turns Ratio : 1:2CT±2%@100KHz,50mV Rx Turns Ratio : 1:1 ±2% @100KHz,50mV

Contextual Info: ELECTRICAL CHARACTERISTICS: Turns Ratio: 1:2CT±2% @100KHz,50mV Inductance: Pri 35uH Min @100KHz,50mV Inductance: at -40ºC 20uH Min @100KHz,50mV Leakage Inductance: 0.12uH Max @100KHz,50mV Interwinding Capacitance: 10pF Max @100KHz,50mV Primary Pins: 2-6

Magnetic Field Sensor FLC 100

Abstract: CL02A400T MC1A310AT g85 wafer 12 volt electronic ballast for xenon light RJ45-B act ge 106 18p IEC61009-1 gec switchgear DDICE60
Contextual Info: Product Catalogue 2013 Circuit Breakers Contactors & Overloads Motor Protection Photovoltaic Fusegear Weatherproof Switchgear Isolators & Switching Relays & Timers Pilot Devices Metering Enclosures Cable Accessories Surge & Safety Lighting CONTENTS: IPD Industrial Products is a proudly Australian owned

Contextual Info: ELECTRICAL CHARACTERISTICS: Tx Inductance: 40uH Min@100KHz.50mV @25°C Rx Inductance : lOOuH Min OlOOKHz 50mV @25°C Tx Inductance: 19uH Min @100KHz.50mV @-40°C Rx Inductance : 40uH Min @100KHz 50mV @-40°C Tx Turns Ratio : 1:2CT±2% Rx Turns Ratio : 1:1±2%

Contextual Info: ELECTRICAL CHARACTERISTICS: Inductance: 100uH Min @100KHz,50mV@25°C Inductance: 40uH Min @100KHz,50mV@-40°C PRI:SEC Turns Ratio: 1:1±2% @100KHz,50mV Bandwith75 OhmsSystem: 0.200~340MHz TYP Leakage lnductance:0.110uH Max @100KHz,0.5mV Interwinding Capacitance: 10pF Max @100KHz,50mV