TN2540 Search Results

Contextual Info: T N 25D Lji Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering information BVDSS/ Order Number / Package f*DS ON ^ G S (th ) ' d (ON) (max) (max) (min) TO-243AA* DICE+ 350V 120 1.8V 1.0A — TN2535ND 400V 12£i 1.8V 1.0A TN2540N8

TN2540-800G

Abstract: 7478 j k
Contextual Info: TN2540, TXN625 TYN625, TYN825 Standard 25 A SCRs Features A • On-state rms current, IT RMS 25 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to 800 V G K ■ Triggering gate current, IGT 40 mA ■ Insulated package TO-220AB ins – Insulating voltage 2500 V rms

TN2540

Contextual Info: TN2540 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2540 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

Contextual Info: TN2535 TN2540 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v d ss/ ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min) TO-243AA* DICE+ 350V 12Q 1.8V 1.0A — TN2535ND 400V 12Q 1.8V 1.0A TN2540N8 TN2540ND

Contextual Info: Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TN2540 General Description Low threshold 2.0V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance

TN2540

Contextual Info: Supertex inc. TN2540 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2540 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

8A SOT-89

Abstract: P024 TN2535 TN2535ND TN2540 TN2540N8 TN2540ND
Contextual Info: TN2535/TN2540 TN2535 TN2540 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* DICE† 350V 12Ω 1.8V 1.0A — TN2535ND 400V 12Ω 1.8V 1.0A

Contextual Info: TN2540 Low Threshold Su pertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs b v dss / R DS ON ^GS(th) B V uqs (max) (max) If Ordering Information 400V 12£1 2.0V 1.0A Order Number / Package TO-92 TO-243AA* Diet TN2540N3 TN2540N8 TN2540ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

Contextual Info: TN2540 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 2.0V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

TN2540ND

Abstract: fet sot-89 marking code 125OC TN2540 TN2540N3-G TN2540N8-G
Contextual Info: TN2540 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex TN2540 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate

marking code tn5d

Abstract: tn5d TO-243AA TN2540 TN2540N3 TN2540N8 TN2540ND marking tn5d
Contextual Info: TN2540 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-92 TO-243AA* Die† 400V 12Ω 2.0V 1.0A TN2540N3 TN2540N8 TN2540ND * Same as SOT-89. †

TN2540

Abstract: TN2540N3 TN2540N8 TN2540ND
Contextual Info: TN2540 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-92 TO-243AA* Die† 400V 12Ω 2.0V 1.0A TN2540N3 TN2540N8 TN2540ND * Same as SOT-89. †

Contextual Info: TN2540N8 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)570m @Temp (øC)150õ IDM Max (@25øC Amb)1.8 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.6# Minimum Operating Temp (øC)-55

800G

Abstract: TN2540 TN2540-G TN2540-600G
Contextual Info: TN2540-G  SCR FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY A DESCRIPTION A The TN2540 series of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This SCR is designed for power supplies up to

Contextual Info: TN2540 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TYN1225

Abstract: scr tyn825 txn625 tyn825 Tyn625
Contextual Info: TN2540, TXN625 TYN625, TYN825, TYN1225 Standard 25 A SCRs Features A • On-state rms current, IT RMS 25 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to 1200 V G K ■ Triggering gate current, IGT 40 mA ■ Insulated package TO-220AB ins – Insulating voltage 2500 V rms

Contextual Info: TN2540 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ R d S ON ^ G S (th ) I d (ON) b v dgs (max) (max) (min) TO-92 TO-243AA* Diet 400V 12£2 2.0V 1.0A TN2540N3 TN2540N8 TN2540ND

SCR 106 B

Abstract: 800G TN2540 TN2540-G TN2540-600G
Contextual Info: TN2540-G SCR FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY A DESCRIPTION A The TN2540 series of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This SCR is designed for power supplies up to

TN2540

Abstract: TN2540N3-G TN2540N8-G TN2540ND tn5d MARKING CODE BV sot-89
Contextual Info: TN2540 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

tn5d

Abstract: TN2540 TN2540N3 TN2540N8 TN2540ND
Contextual Info: TN2540 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-92 TO-243AA* Die† 400V 12Ω 2.0V 1.0A TN2540N3 TN2540N8 TN2540ND * Same as SOT-89. †

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

Contextual Info: TN2535 I Ljà Supertex. inc. I l L J U U 254° W Lr Low Thresh old N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^DS ON ^GS(th) l[)(ON) b v dgs (max) (max) (min) 350V 12a 1.8V 400V 12Q 1.8 V Order Number / Package TO-243AA*

bta41-600b application

Abstract: po130aa BTA41-600B TYN616 BTA41-800B BTB24-600BW BTA06-600B bta40 circuit TYN1012 BTA26-800B internal circuit
Contextual Info: Thyristors Advanced Power Switching Reference Guide SENSITIVE GATE SCRs IT RMS (A) VRRM / VDRM (V) P/N ITSM* (A) IGT max (µA) IH max (mA) 0.25 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 0.8 1.25 1.25 1.25 1.25 1.25 1.25 1.25 1.25 4 4 4 4 4 4 4