TN28F010150 Search Results

TN28F010150 Datasheets (1)

Filter by Manufacturer

Intel

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TN28F010-150		Intel	28F010 1024K (128K x 8) CMOS FLASH MEMORY	Original	PDF	907.77KB	33

TN28F010150 Price and Stock

Filter by Manufacturer

Select Manufacturer


Rochester Electronics LLC TN28F010-150-G TN28F010-150-G
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TN28F010-150-G	Bulk			7	1 - 10 $45.69 100 $45.69 1000 $45.69 10000 $45.69	Buy Now
Rochester Electronics	TN28F010-150-G		7,201		1	1 $36.55 10 $36.55 100 $34.36 1000 $32.16 10000 $32.16	Buy Now
Intel Corporation TN28F010150 Flash Parallel 5V 1M-bit 128K x 8 150ns 32-Pin PLCC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	TN28F010150		70			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Intel Corporation TN28F010-150 IC,EEPROM,NOR FLASH,128KX8,CMOS,LDCC,32PIN,PLASTIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	TN28F010-150		39			1 $30.00 10 $30.00 100 $25.50 1000 $25.50 10000 $25.50	Buy Now
NexGen Digital	TN28F010-150		449			1 - 10 - 100 - 1000 - 10000 -	Get Quote

TN28F010150 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
28F010 Abstract: TN28F010 N28F010-120 TN28F010-120 1N914 80C186 tn28f010-150 PLCC pin configuration 80c186 29020 Contextual Info: E 28F010 1024K 128K X 8 CMOS FLASH MEMORY 8 n n n n n n n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  2 Second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% V PP	Original	28F010 1024K 28F010 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 N28F010-120 TN28F010 N28F010-120 TN28F010-120 1N914 80C186 tn28f010-150 PLCC pin configuration 80c186 29020	PDF
29F020 Abstract: 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 28F010 80C186 E28F010 N28F010 Contextual Info: E 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 n n n n n n n Flash Electrical Chip-Erase  1-Mbit: 1 Second Typical Chip-Erase  2-Mbit: 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  1-Mbit: 1 Second Chip-Program	Original	28F010 28F020 32-Lead P28F010-90 P28F010-120 P28F010-150 TN28F010-90 TN28F010-120 TN28F010-150 TP28F010-90 29F020 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 80C186 E28F010 N28F010	PDF
Contextual Info: 28F010 1024K 128K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 1 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 [is Typical Byte-Program — 2 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp	OCR Scan	28F010 1024K 32-Pin 32-Lead	PDF
TN80C196KC20 Abstract: TE28F800B3TA120 N80C51FA1 TN80C196KB16 N80C31BH1 TE28F008B3T115 N80C196KC20 DT28F320S5-90 TE28F160F3T120 N80C3224 Contextual Info: Product Change Notification Please respond to your distributor if you have any issues with the timeline or content of this change. No response from customers will be deemed as acceptance of the change and the change will be implemented pursuant to the key milestones set forth in this attached PCN.	Original	PLCC44 PLCC68 TN80C196KC20 TE28F800B3TA120 N80C51FA1 TN80C196KB16 N80C31BH1 TE28F008B3T115 N80C196KC20 DT28F320S5-90 TE28F160F3T120 N80C3224	PDF
29F020 Abstract: 28F010 28F020 80C186 E28F010 N28F010 P28F010 29020 Contextual Info: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/M icrocontroller Compatible Write Interface	OCR Scan	28F010 28F020 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 E28F010-150 TE28F010-90 29F020 28F020 80C186 E28F010 N28F010 P28F010 29020	PDF
TN28F010-120 Abstract: 28F010 N28F010-120 TN28F010 intel 28F010 1N914 80C186 n28f010-150 TP28F010 Contextual Info: E 28F010 1024K 128K X 8 CMOS FLASH MEMORY 8 n n n n n n n Flash Electrical Chip-Erase  1 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  2 Second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% V PP	Original	28F010 1024K 28F010 32-Pin 32-Lead E28F010-90 N28F010-90 E28F010-120 N28F010-120 TN28F010-120 N28F010-120 TN28F010 intel 28F010 1N914 80C186 n28f010-150 TP28F010	PDF