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    Allegro MicroSystems LLC A19302PUBATN-RPE

    2-WIRE ABS DIRECTION AND SPEED S
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    DigiKey A19302PUBATN-RPE Bulk 12,000
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    Mouser Electronics A19302PUBATN-RPE
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    Allegro MicroSystems LLC A19302PUBATN-RPE-A

    2-WIRE ABS DIRECTION AND SPEED S
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    DigiKey A19302PUBATN-RPE-A Bulk 12,000
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    Laird Connectivity Inc PT1951TNRPTNRP

    CASSY, A195, RTNM, RTNM - Bag (Alt: PT1951TNRPTNRP)
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    Avnet Americas PT1951TNRPTNRP Bag 25
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    Laird Connectivity Inc G195TNRPI

    MOUNT,MGM,3/4,A195,RTNM - Bag (Alt: G195TNRPI)
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    Avnet Americas G195TNRPI Bag 5
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    Laird Connectivity Inc PT1958NTNRP

    CASSY, A195, NM, RTNM - Bag (Alt: PT1958NTNRP)
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    Avnet Americas PT1958NTNRP Bag 17
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    Find more TNRP price and stock on Findchips.com

    TNRP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TH4B

    Abstract: No abstract text available
    Text: PHAST-3N STM-1/STS-3/STS-3c SDH/SONET Overhead Terminator with Telecom Bus Interface TXC-06103 DATA SHEET • • • • • • • • • • • • • • • • • Bit-serial SDH/SONET line interface - Pseudo-ECL interface with clock recovery and synthesis


    Original     		PDF TXC-06103 64-byte TXC-06103-MB TH4B

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M474B5173BH0 M474B1G73BH0 204pin 78FBGA K4B4G0846B 512Mbx8 1Gx72

    NT5TU128M8DE

    Abstract: NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD NT5TU256M4DE nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE
    Text: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG NT5TB256M4DE / NT5TB128M8DE / NT5TB64M16DG 1Gb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -AD/-ADI -AC/-ACI/-ACL -BE -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6


    Original     		PDF NT5TU256M4DE NT5TU128M8DE NT5TU64M16DG NT5TB256M4DE NT5TB128M8DE NT5TB64M16DG -37B/-37BI DDR2-533 DDR2-667 DDR2-800 NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE

    busy tone detector

    Abstract: ampop FX663 FX663D4 FX663P3 ampop rail
    Text: CML Semiconductor Products Call Progress Decoder FX663 D/663/3 January 1999 1.0 • Features Decodes Call Progress Tones Worldwide covering: • • • • 1.1 Single and Dual Tones Fax and Modem Answer/Originate Tones Special Information Tones Fast 'US Busy' Tone Detector


    Original     		PDF FX663 D/663/3 58MHz 16-Pin FX663 busy tone detector ampop FX663D4 FX663P3 ampop rail

    W971GG6JB

    Abstract: 8X12 DDR2-667 DDR2-800 0A80
    Text: W971GG6JB 8M  8 BANKS  16 BIT DDR2 SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W971GG6JB W971GG6JB 8X12 DDR2-667 DDR2-800 0A80

    k4b2g1646q

    Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
    Text: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G1646Q 96FBGA k4b2g1646q ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA

    IS46TR

    Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
    Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V        


    Original     		PDF IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 cycles/64 cycles/32 60A/AL 78-ball IS46TR IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.51, Apr. 2013 M471B5173BH0 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M471B5173BH0 M471B1G73BH0 204pin 78FBGA K4B4G0846B 512Mbx8 1Gx64

    Untitled

    Abstract: No abstract text available
    Text: 3D Glasses 8-bit Flash Type MCU HT45FH3T Revision: V1.10 Date: ������������ May 17, 2013 HT45FH3T 3D Glasses 8-bit Flash Type MCU Table of Contents Features. 6


    Original     		PDF HT45FH3T

    Untitled

    Abstract: No abstract text available
    Text: TinyPowerTM A/D Flash Type 8-Bit MCU with LCD & EEPROM HT67F30/HT67F40/HT67F50/HT67F60 Revision: V1.90 Date: ����������������� December 19, 2013 HT67F30/HT67F40/HT67F50/HT67F60 TinyPowerTM A/D Flash Type 8-Bit MCU with LCD & EEPROM


    Original     		PDF HT67F30/HT67F40/HT67F50/HT67F60

    Untitled

    Abstract: No abstract text available
    Text: Ultrasonic Park Assist 8-bit Flash MCU HT45F39 Revision: V1.00 Date: ���������������� October 30, 2013 HT45F39 Ultrasonic Park Assist 8-bit Flash MCU Table of Contents Features. 5


    Original     		PDF HT45F39

    Untitled

    Abstract: No abstract text available
    Text: Enhanced I/O Flash Type MCU with EEPROM HT68F20/HT68F30/HT68F40/HT68F50/HT68F60 HT68FU30/HT68FU40/HT68FU50/HT68FU60 Revision: 1.80 Date: January 9, 2013 Contents Table of Contents Technical Document .8


    Original     		PDF HT68F20/HT68F30/HT68F40/HT68F50/HT68F60 HT68FU30/HT68FU40/HT68FU50/HT68FU60

    Untitled

    Abstract: No abstract text available
    Text: W632GU6KB 16M  8 BANKS  16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W632GU6KB

    Untitled

    Abstract: No abstract text available
    Text: W631GU6KB 8M  8 BANKS  16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W631GU6KB

    Untitled

    Abstract: No abstract text available
    Text: ESMT M14D5121632A 2H Operation Temperature Condition (TC) -40°C~95°C DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z VDD = 1.75V ~ 1.9V, VDDQ = 1.75V ~ 1.9V (for speed grade -1.8) z


    Original     		PDF M14D5121632A

    M14D1G166

    Abstract: m14d1g M14D1G1664A m14d1g16 DDRII esmt
    Text: ESMT M14D1G1664A 2D 7DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features  JEDEC Standard  VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V  Internal pipelined double-data-rate architecture; two data access per clock cycle  Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.


    Original     		PDF M14D1G1664A M14D1G166 m14d1g M14D1G1664A m14d1g16 DDRII esmt

    NT5CB64M16AP-CF

    Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC
    Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature  Write Leveling  1.5V ± 0.075V JEDEC Standard Power Supply  OCD Calibration  8 Internal memory banks (BA0- BA2)  Dynamic ODT (Rtt_Nom & Rtt_WR)  Differential clock input (CK, )


    Original     		PDF NT5CB256M4AN NT5CB128M8AN NT5CB64M16AP 60-Ball 84-Ball NT5CB64M16AP-CF nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC

    W631GG6KB-12

    Abstract: W631GG6KB-15 W631GG6KB15A DDR3 DIMM SPD JEDEC 24si 9x13 W631GG6KB15K w631gg6k W631GG6KB12I W631GG6KB-15I
    Text: W631GG6KB 8M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W631GG6KB W631GG6KB-12 W631GG6KB-15 W631GG6KB15A DDR3 DIMM SPD JEDEC 24si 9x13 W631GG6KB15K w631gg6k W631GG6KB12I W631GG6KB-15I

    Untitled

    Abstract: No abstract text available
    Text: W9712G6KB 2M  4 BANKS  16 BIT DDR2 SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W9712G6KB

    W971GG6KB

    Abstract: W971GG6KB-3 W971GG6KB-25 W971GG6KB25
    Text: W971GG6KB 8M  8 BANKS  16 BIT DDR2 SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W971GG6KB W971GG6KB-3 W971GG6KB-25 W971GG6KB25

    W631GU8KB15K

    Abstract: No abstract text available
    Text: W631GU8KB 16M  8 BANKS  8 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W631GU8KB W631GU8KB15K

    W632GG6KB

    Abstract: W632GG6KB15I
    Text: W632GG6KB 16M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W632GG6KB W632GG6KB15I

    W3J512M32G

    Abstract: M41K256M32
    Text: W3J512M32G-XBX W3J512M32G T -XB2X W3J512M36/40G(T)-XB3X *PRELIMINARY 2GB – 512M x 32/36/40 DDR3 SDRAM 1.5V – 136/204 PBGA Multi-Chip Package FEATURES BENEFITS  DDR3 Data Rate = 800, 1,066, 1333 Mb/s  74% Space savings vs. FBGA  Packages:


    Original     		PDF W3J512M32G-XBX W3J512M32G W3J512M36/40G x36/40 M41K256M32

    Untitled

    Abstract: No abstract text available
    Text: W3J512M64K-XPBX W3J512M64K-XLBX *ADVANCED 4GB – 512M x 64 DDR3 SDRAM 1.35V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1,066, 1333, 1600* Mb/s  Differential clock terminations included


    Original     		PDF W3J512M64K-XPBX W3J512M64K-XLBX