TNS CAPACITORS Search Results

tns capacitors

Abstract: .1J 100v 344 capacitors
Contextual Info: Axial Type Aluminum Electrolytic Capacitors TNS ‫! ޜ‬Ӳ !፿! ፔ! ႋ! ာ! ႋ! ী! Ꮒ Non-polarized Type Features •85℃, 1,000 hours assured 85℃1000 小時壽命保證 •Non-polarized, suitable for use in circuits whose polarity is sometimes reversed or unknown.

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

P1819

Contextual Info: OCT 2« *»2 MOTOROLA O rd e r th is d o c u m e n t b y D S P 5 6 4 0 1 /D SEMICONDUCTOR — • TECHNICAL DATA DSP56401 AES/EBU/CP340 Digital Audio Transceiver The DSP56401 is a low cost, digital audio transceiver system which is compatible with the AES/EBU and EIAJ CP340 digital audio transmission

piezoelectric humidifier CIRCUITS

Abstract: piezoelectric humidifier Ultrasonic humidifier circuit tns capacitors ultrasonic humidifier mobile phone ultrasonic POWER FERRITE TRANSFORMERS flyback inverter welding PTC SY microwave motion sensors
Contextual Info: Contents Mobile Communication Devices. 3 EMI Prevention Components. 9 Ceramic Capacitors. 13 1 13 Ferrite Cores, Amorphous Magnetic Cores. 15

tns capacitors

Abstract: circuit of single phase photovoltaic inverter 7P-23 spark-gap spark gap 100 kv spark gap switch SURGE ARRESTER spark gap high voltage sparkgap switches IIMP1
Contextual Info: 7P Series - Surge Protection Device SPD Features 7P.21.8.275.1020 7P.22.8.275.1020 SPD Type 2 Surge arrester range - single phase systems Surge arrester suitable for 230V system/ applications • Protects equipment against overvoltage caused by lightning strikes or switching transients

tns capacitors

Contextual Info: MITSUBISHI LS Is DRAM MODULE MH4V32CJJ-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 134217728-BIT (4194304-WQRD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH4V32CJJ is 4194304-word by 32-bit dynamic RAM module. That module consists of 8 industry standard 4M x 4 dynamic RAMs in TSOP.

Contextual Info: MITSUBISHI LS Is DRAM MODULE MH4M32CJJ-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 134217728-BIT (4194304-WQRD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH4M32CJJ is 4194304-word by 32-bit dynamic RAM module. That module consists of nine industry standard 4M x 4 dynamic RAMs in TSOP.

tns capacitors

Abstract: BlueWalker
Contextual Info: Product Information PowerWalker VFI 80000 TAP 3/3 BX Online UPS 80000VA Online UPS Leading Power Factor for modern IT Data Centers Hot Parallel Connection - sharing load without communication between UPS Energy-efficient performance lowers operating costs

JS-2001-06

Abstract: tns capacitors jst xhp-6 S200-03 VPF-S200-48 555A plug VPF-S200-03 VPF-S200-05 VPF-S200-12 VPF-S200-24
Contextual Info: • Model VPF-S200-03 VPF-S200-05 VPF-S200-12 VPF-S200-24 VPF-S200-48 VPF-S200-XX U-Frame Power Supply Output 3 - 4V 5 - 6V 12 - 16V 24 - 30V 36 - 56V Output Current 0.5A 0.5A 0.5A 0.5A 0.5A Output Current 30A 40A 16.7A 8.34A 5.55A Regulation +/- 1% +/- 1%

BA684A

Abstract: ic level audio meter current comparator ic 20 led resistor meter
Contextual Info: LED level meter driver, 8-point, linear scale BA684A The BA684A monolithic 1C is an 8-point, bar-type LED level meter driver. Dimensions Units : mm BA684A (DIP16) The IC is provided with two inputs. A comparator is used to determine the larger signal. The larger signal is used to

MOSFET J162

Abstract: j162 MOSFET J147
Contextual Info: Preliminary Data Sheet August 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz

0203S

Abstract: AGRA10XM JESD22-C101A J162 j507 MOSFET J147
Contextual Info: Preliminary Data Sheet April 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz

88882

Contextual Info: LG Semicon Co.,Ltd. Description The GMM7321000BS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pm SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321000BS/SG is optimized for application to the systems

MOSFET J162

Abstract: J473 MOSFET J147
Contextual Info: Preliminary Data Sheet March 2004 AGRA10XM 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Performance Features The AGRA10 is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for Nordic Mobile Telephone (NMT) 460 MHz

tns capacitors

Abstract: capacitor F3 037 02 100B120FW500X
Contextual Info: Preliminary Data Sheet June 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor

Contextual Info: MITSUBISHI LS Is DRAM MODULE MH4V325CJJ-5,-6,-7,-5S,-6S,-7S HYPER PAGE MODE 134217728-BIT (4194304-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH4V325CJJ is 4194304-word by 32-bit dynamic RAM module. That module consists of nine industry standard 4M x 4 dynamic RAMs in TSOP.

AGR045010

Abstract: AGRA10E AGRA10EU JESD22-C101A RF MOSFET CLASS AB
Contextual Info: Preliminary Data Sheet February 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor

Contextual Info: @ LG Semicon. Co. LTD._ Description Features The GMM7324210BNS/SG is a 4M x 32 bits Dynamic RAM MODULE w hich is assem bled 8 pieces o f 4M x 4bit EDO DRAMs in 24 26 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7324210BNS/SG is

Contextual Info: File E135803 Vol. 2 Sec. 2 and Report Page 1 Issued: Revised: 2000-01-11 2006-02-14 DESCRIPTION PRODUCT COVERED: Component - Switching Power Supplies for Use in Information Technology Equipment, Models GPM40A, GPM40B, GPM40D, GPC40A, GPC40B, GPC40D, GPC40-X and

Contextual Info: MITSUBISHI LS Is DRAM MODULE MH4M32CJJ-5,-6,-7,-5S,-6S,-7S FAST PAGE MODE 134217728-BIT (4194304-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION The M H 4 M 3 2 C J J is 4 1 9 4 3 0 4 -w o rd by 32-bit dynamic R AM module. Th at module consists o f nine industry standard 4 M

Contextual Info: MITSUBISHI LS Is <DRAM MODULE MH4V325CJJ-5,-6,-7,-5S,-6S,-7S HYPER PAGE MODE 134217728-BIT 4194304-WQRD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH4V325CJJ is 4194304-word by 32-bit dynamic RAM module. That module consists of nine industry standard 4M x 4 dynamic RAMs in TSOP.

GMM7322010C

Contextual Info: @ LG Semicon. Co. LTD Description Features The GMM7322010CS/SG is a 2M x 32 bits D y n a m ic R A M M O D U L E w h ic h is assembled 16 pieces o f 1M x 4bit EDO DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GM M 7322010CS/SG is

Contextual Info: P r e lim in a r y S p e „ M it s u b is h i l s is MH4V7245DATJ-5,5S -6,6S -7,7S Some of contents are subject to change without notice. _HYPER PAGE MODE 301989888-BIT 4194304-BIT BY 72-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH4V7245DATJ is 4194304-word x 72-bit dynamic

A1 GNC

Abstract: tns capacitors
Contextual Info: K F B i MICRO »DEVICES RF2114 MEDIUM POWER LINEAR AMPLIFIER T y p ica l A p p lic a tio n s • Digital Communication Systems Portable Battery Powered Equipment • Spread Spectrum Communication Systems Commercial and Consumer Systems • Driver for Higher Power Linear Applications