TO METAL PACKAGE ALUMINUM KOVAR Search Results
TO METAL PACKAGE ALUMINUM KOVAR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TPH2R408QM |
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MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance |
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XPH2R106NC |
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N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) |
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XPH3R206NC |
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N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) |
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XPH3R304PS |
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N-ch MOSFET, 40 V, 60 A, 0.0033 Ω@10V, SOP Advance(WF) |
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TPHR7404PU |
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N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOSⅨ-H |
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TO METAL PACKAGE ALUMINUM KOVAR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TO metal package aluminum kovarContextual Info: RF Switching Solutions 409V-3519 Hermetically Sealed - High Power SPDT RF EM Switch Applications Miniature high power hermetically sealed switch 409V-3519 from Dow-Key Microwave represents new technology to provide extremely low loss, high integrity switching of high power RF signals up to 6 GHz and 100W. |
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09V-3519 09V-3519) -55oC TO metal package aluminum kovar | |
TO metal package aluminum kovarContextual Info: RF Switching Solutions 409V-3519 Hermetically Sealed - High Power SPDT RF EM Switch Applications Miniature high power hermetically sealed switch 409V-3519 from Dow-Key Microwave represents new technology to provide extremely low loss, high integrity switching of high power RF signals up to 6 GHz and 100W. |
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09V-3519 09V-3519) -55oC TO metal package aluminum kovar | |
sm 4109
Abstract: HS305 3041 v H1300 077W
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OCR Scan |
HS-305/S8 T-51-11 Mll-Std-883 OG305 --15V HI-307^ HI-300 Hl-303 H1-300 HI-304 sm 4109 HS305 3041 v H1300 077W | |
CERAMIC PIN GRID ARRAY wire lead frame
Abstract: BGA and QFP Package TO metal package aluminum kovar TSOP 2E TSOP 54 Package nail qfp 32 land pattern ceramic pin grid array package plating ceramic pin grid array package lead finish PGA wire bonding
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DB81-10002-2E CERAMIC PIN GRID ARRAY wire lead frame BGA and QFP Package TO metal package aluminum kovar TSOP 2E TSOP 54 Package nail qfp 32 land pattern ceramic pin grid array package plating ceramic pin grid array package lead finish PGA wire bonding | |
Contextual Info: h HI"300/883 a r r is Dual SPST CMOS Analog Switch January 1989 Features Description • This Circuit Is Processed In Accordance to M il-S td883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Analog Signal Range ± 15V Supplies .±15V |
OCR Scan |
td883 HI-300/883 100nA | |
Contextual Info: 23 HARRIS H I - 3 8 7 / 8 8 3 SPDT CMOS Analog Switch January 1989 Features Description • This C ircu it is P ro c e ss e d In A cc o rd a n c e to M il-S td - The HI-387/883 SPDT sw itch is fabricated using CMOS technology tric Isolation process. This sw itch |
OCR Scan |
HI-387/883 DG387. HI-390 | |
Contextual Info: h a r r is H1-200/883 Dual SPST CMOS Analog Switch January 1989 Features Description • This Circuit Is Processed in Accordance to M ll-S td883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. HI-200/883 is a m o nolithic device com prising tw o in |
OCR Scan |
H1-200/883 td883 HI-200/883 240ns 500ns | |
Contextual Info: h a r r is H I-3 0 4 /6 8 3 Dual SPST CMOS Analog Switch Ja n u a ry 19 89 Features Description • This Circuit Is Processed in Accordance to MH-Std- The HI-304/883 sw itch is a m o nolithic device fabricated using CMOS tech nolog y and the H arris D ielectric Isola |
OCR Scan |
HI-304/883 100nA HI-304 HI-307^ HI-3001 HI-303 | |
HI-3001Contextual Info: 33 HARRIS H I-305/Q Q 3 January 1989 SPDT CMOS Analog Switch Features Description • This Circuit is Processed in Accordance to M il-S td88 3 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Analog Signal Range ±15V Supplies .±15V |
OCR Scan |
I-305/Q HI-305/883 DG305. HI-3001 HI-303 | |
Contextual Info: HI-301/683 ¡B h a r r i s SPDT CMOS Analog Switch January 1 9 8 9 Features Description • This Circuit Is Processed In Accordance to M il-S td- The HI-301/883 sw itch is m o nolithic devices fabricated using CMOS tech nolog y and the Harris D ielectric Isola |
OCR Scan |
HI-301/683 HI-301/883 100nA HI-304 HI-307 | |
HA1-5190/883Contextual Info: HARRIS SEHICOND SECTOR lnE j | i 3D2a?l 0□ 13331 4 I H A -5190/883 2) HARRIS Wideband, Fast Settling Operational Amplifier January 1989 Features Description • T h is C irc u it Is P ro c e s s e d in A c c o rd a n c e to M ll-S td 88 3 a n d is F u lly C o n fo rm a n t U n d e r th e P ro visio n s o f |
OCR Scan |
60V/ns 100ns 150MHz HA-5190 100pF) 5602B HA1-5190/883 | |
Contextual Info: S HARRIS H A - 5 1 2 7 / 8 8 3 Ultra-Low Noise, Precision Operational Amplifier January igsg Features D escrip tio n • This Circuit Is Processed In Accordance to M il-S td 883 and Is Fully Conform ant U nder the Provisions of Paragraph 1.2.1. The HA-5127/883 monolithic operational amplifier features |
OCR Scan |
HA-5127/883 120mW 100Hz 200mV | |
VIA VT 2021
Abstract: sg 3554 t51H
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OCR Scan |
T-51-11 Mll-Std-883 1250C) 100nA DG301 HI-301/303 HI-3041 HI-307^ HI-300 HI-303 VIA VT 2021 sg 3554 t51H | |
Contextual Info: h H I-3 0 4 /Q Q 3 a r r is Dual SPST CMOS Analog Switch January 1989 Features Description • This Circuit Is Processed In Accordance to M ll-S td - The HI-304/883 sw itch is a m o nolithic device fabricated using CMOS tech nolog y and the Harris D ielectric Isola |
OCR Scan |
HI-304/883 DG304. HI-304 HI-307^ HI-3001 HI-303 | |
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Contextual Info: HA-5127/883 33 HARRIS Ultra-Low Noise, Precision Operational Amplifier January 1989 Features D escrip tio n • T his C irc u it is P roce ssed In A c c o rd a n c e to M il-S td 883 a n d Is Fu lly C o n fo rm a n t U n d e r th e P rovision s o f Paragraph 1.2.1. |
OCR Scan |
HA-5127/883 200mV | |
Contextual Info: HA-5141/883 g HARRIS Single, Ultra-Low Power Operational Amplifier January 1989 F eatures D escrip tio n • This Circuit Is Processed In Accordance to M ll-S td - The H A-5141/883 single, ultra-low power operational am plifier provide AC and DC performance characteristics |
OCR Scan |
HA-5141/883 -550C -550C, 200mV -200mV | |
Contextual Info: H A -500 2/88 3 23 HARRIS Monolithic, Wideband, High Slew Rate, High Output Current Buffer F eatures D escrip tio n • This Circuit is Processed in Accordance to M il-S td 88 3 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The H A -500 2/88 3 is a monolithic, wideband, high slew |
OCR Scan |
150pF | |
Contextual Info: S HA-5152/883 h a r r is Dual, Low Power Operational Amplifier January 1989 Features D escrip tio n • This Circuit is Processed in Accordance to Mll-Std883 and Is Fully Conformant Under the Provisions oF Paragraph 1.2.1. The HA-5152 /883 dual operational am plifier is part of a |
OCR Scan |
HA-5152/883 Mll-Std883 HA-5152 250nA -550C -550C, 200mV -200mV | |
Contextual Info: HI-300/883 30 HARRIS Dual SPST CMOS Analog Switch J a n u a ry 1 9 8 9 Features Description • T h is C ircu it Is P ro cessed In A cc o rd a n c e to M ii-S td - The HI-300/883 sw itch is a m o n o lith ic device fabricated using CMOS technology and the Harris D ielectric Isola |
OCR Scan |
HI-300/883 HI-300/883 DG300. | |
HA-5151Contextual Info: H A -5151/883 ffl h a r r is Single, Low Power Operational Amplifier F eatures D escrip tio n • T his C irc u it Is P roce ssed In A c c o rd a n c e to M ll-S td 883 an d is Fu lly C o n fo rm a n t U n d e r th e P ro visio n s o f P aragraph 1.2.1. The HA-5151/883 single operational am plifier is part of a |
OCR Scan |
HA-5151/883 -550C 1250C 200mV -200mV HA-5151 | |
m387Contextual Info: HARRIS SEMICOND SECTOR 33 HARRIS ME D I 43Da571 0D135Q2 t | H 1 - 3 8 7 / 8 8 3 T-51-11 SPDT CMOS Analog Switch January 1 9 8 9 Features Description • This Circuit Is Procèsseci In Accordance to M il-S td 883 and Is Fully Conform ant Under the Provisions of |
OCR Scan |
HI-387/8Q3 T-51-11 Mit-Std-883 100nA DG387 HI-390 m387 | |
h1381
Abstract: H-1381 HI1-381
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OCR Scan |
-381/Q83 T-51-11 Mll-Std-883 1250C) 100nA DG381 HI-380 h1381 H-1381 HI1-381 | |
Contextual Info: H A - 5190/883 g HARRIS W id e b a n d , F a s t Settlin g O p e r a t io n a l A m p lifie r January 1989 F eatures D escrip tio n • T h is C irc u it is P ro c e s s e d in A cc o rd a n c e to M il-S td 8 8 3 a n d is Fully C o n fo rm a n t U n d e r th e Provisions of |
OCR Scan |
100ns 2268B 5602B HA-5190 | |
Contextual Info: HARRIS SEMICOND SECTOR n IDE D I M 3 D 2 S 71 Q 0 1 3 Dat, ? | H A -5101/883 r i * HARRIS i f i Low Noise, High Performance Operational Amplifier January 1989 / Features Description • This Circuit is Processed in Accordance to M ii-S td - The H A -5101/883 Is a dielectrically Isolated operational |
OCR Scan |
100Hz 200mV -550C 125PC |