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    TO METAL PACKAGE ALUMINUM KOVAR Search Results

    TO METAL PACKAGE ALUMINUM KOVAR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    TO METAL PACKAGE ALUMINUM KOVAR Datasheets Context Search

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    TO metal package aluminum kovar

    Abstract: No abstract text available
    Text: RF Switching Solutions 409V-3519 Hermetically Sealed - High Power SPDT RF EM Switch Applications Miniature high power hermetically sealed switch 409V-3519 from Dow-Key Microwave represents new technology to provide extremely low loss, high integrity switching of high power RF signals up to 6 GHz and 100W.


    Original     		PDF 09V-3519 09V-3519) -55oC TO metal package aluminum kovar

    TO metal package aluminum kovar

    Abstract: No abstract text available
    Text: RF Switching Solutions 409V-3519 Hermetically Sealed - High Power SPDT RF EM Switch Applications Miniature high power hermetically sealed switch 409V-3519 from Dow-Key Microwave represents new technology to provide extremely low loss, high integrity switching of high power RF signals up to 6 GHz and 100W.


    Original     		PDF 09V-3519 09V-3519) -55oC TO metal package aluminum kovar

    CERAMIC PIN GRID ARRAY wire lead frame

    Abstract: BGA and QFP Package TO metal package aluminum kovar TSOP 2E TSOP 54 Package nail qfp 32 land pattern ceramic pin grid array package plating ceramic pin grid array package lead finish PGA wire bonding
    Text: Package Lineup/ Forms/ Structures 1. Package Lineup 2. Package Forms 3. Package Structures DB81-10002-2E 1 Package Lineup/ Forms/ Structures 1. Package Lineup PACKAGE 1. Package Lineup The packages are classified as follows, according to form, material, and the mounting methods


    Original     		PDF DB81-10002-2E CERAMIC PIN GRID ARRAY wire lead frame BGA and QFP Package TO metal package aluminum kovar TSOP 2E TSOP 54 Package nail qfp 32 land pattern ceramic pin grid array package plating ceramic pin grid array package lead finish PGA wire bonding

    sm 4109

    Abstract: HS305 3041 v H1300 077W
    Text: H A R R I S S E M I C O N D S E CT OR IDE D I 4 3 0 5 2 7 1 0013447 3 I H I-3 0 5 /8 8 3 3 3 HARRIS T -5 1 -1 1 SPDT CMOS Analog Switch January 1989 Features Description • This Circuit Is Processed In Accordance to Mli-Std883 and Is Fully Conformant Under the Provisions of


    OCR Scan     		PDF HS-305/S8 T-51-11 Mll-Std-883 OG305 --15V HI-307^ HI-300 Hl-303 H1-300 HI-304 sm 4109 HS305 3041 v H1300 077W

    Untitled

    Abstract: No abstract text available
    Text: h HI"300/883 a r r is Dual SPST CMOS Analog Switch January 1989 Features Description • This Circuit Is Processed In Accordance to M il-S td883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Analog Signal Range ± 15V Supplies .±15V


    OCR Scan     		PDF td883 HI-300/883 100nA

    Untitled

    Abstract: No abstract text available
    Text: 23 HARRIS H I - 3 8 7 / 8 8 3 SPDT CMOS Analog Switch January 1989 Features Description • This C ircu it is P ro c e ss e d In A cc o rd a n c e to M il-S td - The HI-387/883 SPDT sw itch is fabricated using CMOS technology tric Isolation process. This sw itch


    OCR Scan     		PDF HI-387/883 DG387. HI-390

    Untitled

    Abstract: No abstract text available
    Text: h a r r is H1-200/883 Dual SPST CMOS Analog Switch January 1989 Features Description • This Circuit Is Processed in Accordance to M ll-S td883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. HI-200/883 is a m o nolithic device com prising tw o in­


    OCR Scan     		PDF H1-200/883 td883 HI-200/883 240ns 500ns

    Untitled

    Abstract: No abstract text available
    Text: h a r r is H I-3 0 4 /6 8 3 Dual SPST CMOS Analog Switch Ja n u a ry 19 89 Features Description • This Circuit Is Processed in Accordance to MH-Std- The HI-304/883 sw itch is a m o nolithic device fabricated using CMOS tech nolog y and the H arris D ielectric Isola­


    OCR Scan     		PDF HI-304/883 100nA HI-304 HI-307^ HI-3001 HI-303

    HI-3001

    Abstract: No abstract text available
    Text: 33 HARRIS H I-305/Q Q 3 January 1989 SPDT CMOS Analog Switch Features Description • This Circuit is Processed in Accordance to M il-S td88 3 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Analog Signal Range ±15V Supplies .±15V


    OCR Scan     		PDF I-305/Q HI-305/883 DG305. HI-3001 HI-303

    Untitled

    Abstract: No abstract text available
    Text: HI-301/683 ¡B h a r r i s SPDT CMOS Analog Switch January 1 9 8 9 Features Description • This Circuit Is Processed In Accordance to M il-S td- The HI-301/883 sw itch is m o nolithic devices fabricated using CMOS tech nolog y and the Harris D ielectric Isola­


    OCR Scan     		PDF HI-301/683 HI-301/883 100nA HI-304 HI-307

    HA1-5190/883

    Abstract: No abstract text available
    Text: HARRIS SEHICOND SECTOR lnE j | i 3D2a?l 0□ 13331 4 I H A -5190/883 2) HARRIS Wideband, Fast Settling Operational Amplifier January 1989 Features Description • T h is C irc u it Is P ro c e s s e d in A c c o rd a n c e to M ll-S td 88 3 a n d is F u lly C o n fo rm a n t U n d e r th e P ro visio n s o f


    OCR Scan     		PDF 60V/ns 100ns 150MHz HA-5190 100pF) 5602B HA1-5190/883

    Untitled

    Abstract: No abstract text available
    Text: S HARRIS H A - 5 1 2 7 / 8 8 3 Ultra-Low Noise, Precision Operational Amplifier January igsg Features D escrip tio n • This Circuit Is Processed In Accordance to M il-S td 883 and Is Fully Conform ant U nder the Provisions of Paragraph 1.2.1. The HA-5127/883 monolithic operational amplifier features


    OCR Scan     		PDF HA-5127/883 120mW 100Hz 200mV

    VIA VT 2021

    Abstract: sg 3554 t51H
    Text: HARRIS S E M IC ON C SECTO R h a r r is IDE D | 4302271 0 0 1 3 4 D 3 4 I HI-301/883 T-51-11 SPDT CMOS Analog Switch January 1989 Features Description • This Circuit Is Processed In Accordance to Mil-Std- The HI-301/883 switch is monolithic devices fabricated


    OCR Scan     		PDF T-51-11 Mll-Std-883 1250C) 100nA DG301 HI-301/303 HI-3041 HI-307^ HI-300 HI-303 VIA VT 2021 sg 3554 t51H

    Untitled

    Abstract: No abstract text available
    Text: h H I-3 0 4 /Q Q 3 a r r is Dual SPST CMOS Analog Switch January 1989 Features Description • This Circuit Is Processed In Accordance to M ll-S td - The HI-304/883 sw itch is a m o nolithic device fabricated using CMOS tech nolog y and the Harris D ielectric Isola­


    OCR Scan     		PDF HI-304/883 DG304. HI-304 HI-307^ HI-3001 HI-303

    Untitled

    Abstract: No abstract text available
    Text: HA-5127/883 33 HARRIS Ultra-Low Noise, Precision Operational Amplifier January 1989 Features D escrip tio n • T his C irc u it is P roce ssed In A c c o rd a n c e to M il-S td 883 a n d Is Fu lly C o n fo rm a n t U n d e r th e P rovision s o f Paragraph 1.2.1.


    OCR Scan     		PDF HA-5127/883 200mV

    Untitled

    Abstract: No abstract text available
    Text: HA-5141/883 g HARRIS Single, Ultra-Low Power Operational Amplifier January 1989 F eatures D escrip tio n • This Circuit Is Processed In Accordance to M ll-S td - The H A-5141/883 single, ultra-low power operational am plifier provide AC and DC performance characteristics


    OCR Scan     		PDF HA-5141/883 -550C -550C, 200mV -200mV

    Untitled

    Abstract: No abstract text available
    Text: H A -500 2/88 3 23 HARRIS Monolithic, Wideband, High Slew Rate, High Output Current Buffer F eatures D escrip tio n • This Circuit is Processed in Accordance to M il-S td 88 3 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The H A -500 2/88 3 is a monolithic, wideband, high slew


    OCR Scan     		PDF 150pF

    Untitled

    Abstract: No abstract text available
    Text: S HA-5152/883 h a r r is Dual, Low Power Operational Amplifier January 1989 Features D escrip tio n • This Circuit is Processed in Accordance to Mll-Std883 and Is Fully Conformant Under the Provisions oF Paragraph 1.2.1. The HA-5152 /883 dual operational am plifier is part of a


    OCR Scan     		PDF HA-5152/883 Mll-Std883 HA-5152 250nA -550C -550C, 200mV -200mV

    Untitled

    Abstract: No abstract text available
    Text: HI-300/883 30 HARRIS Dual SPST CMOS Analog Switch J a n u a ry 1 9 8 9 Features Description • T h is C ircu it Is P ro cessed In A cc o rd a n c e to M ii-S td - The HI-300/883 sw itch is a m o n o lith ic device fabricated using CMOS technology and the Harris D ielectric Isola­


    OCR Scan     		PDF HI-300/883 HI-300/883 DG300.

    HA-5151

    Abstract: No abstract text available
    Text: H A -5151/883 ffl h a r r is Single, Low Power Operational Amplifier F eatures D escrip tio n • T his C irc u it Is P roce ssed In A c c o rd a n c e to M ll-S td 883 an d is Fu lly C o n fo rm a n t U n d e r th e P ro visio n s o f P aragraph 1.2.1. The HA-5151/883 single operational am plifier is part of a


    OCR Scan     		PDF HA-5151/883 -550C 1250C 200mV -200mV HA-5151

    m387

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR 33 HARRIS ME D I 43Da571 0D135Q2 t | H 1 - 3 8 7 / 8 8 3 T-51-11 SPDT CMOS Analog Switch January 1 9 8 9 Features Description • This Circuit Is Procèsseci In Accordance to M il-S td 883 and Is Fully Conform ant Under the Provisions of


    OCR Scan     		PDF HI-387/8Q3 T-51-11 Mit-Std-883 100nA DG387 HI-390 m387

    h1381

    Abstract: H-1381 HI1-381
    Text: HARRIS SEfllCOND SECTOR IDE D I 4302271 0013400 I HI-361/Q83 ül HARRIS • • , T—51-11 f" Dual SPST CMOS Analog Switch January 19 89 Features Description • This Circuit Is Processed In Accordance to M ll-S td - The H I-381/883 dual SPST sw itch is a m o n o lith ic device


    OCR Scan     		PDF -381/Q83 T-51-11 Mll-Std-883 1250C) 100nA DG381 HI-380 h1381 H-1381 HI1-381

    Untitled

    Abstract: No abstract text available
    Text: H A - 5190/883 g HARRIS W id e b a n d , F a s t Settlin g O p e r a t io n a l A m p lifie r January 1989 F eatures D escrip tio n • T h is C irc u it is P ro c e s s e d in A cc o rd a n c e to M il-S td 8 8 3 a n d is Fully C o n fo rm a n t U n d e r th e Provisions of


    OCR Scan     		PDF 100ns 2268B 5602B HA-5190

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR n IDE D I M 3 D 2 S 71 Q 0 1 3 Dat, ? | H A -5101/883 r i * HARRIS i f i Low Noise, High Performance Operational Amplifier January 1989 / Features Description • This Circuit is Processed in Accordance to M ii-S td - The H A -5101/883 Is a dielectrically Isolated operational


    OCR Scan     		PDF 100Hz 200mV -550C 125PC