TO-204AE PACKAGE Search Results

IRF540

Abstract: irf540 TTL IRF5405 IRF140 LEM 543 IRF140-143 24A15 IRF1401 irf540 27 MHz irf540 be
Contextual Info: ^F A I R C H I L D SEMICONDUCTOR fl4 _ • A Schlumberger Company Power And Discrete Division Description TQ-204AE _ TO-22QAB These devices are n-channel, enhancement mode, power

Contextual Info: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot

irf240

Contextual Info: HE D I «1055455 INTERNATIONAL OQÛ'JOIt, 3 | Data Sheet No. PD-9.370F RECTIFIER INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF240 IRF241 IRF242 IM-CHANNEL 200 Volt, 0.18 Ohm HEXFET T0-204AE TO-3 Hermetic Package

2E12

Abstract: FRK9160D FRK9160H FRK9160R Rad Hard in Fairchild for MOSFET
Contextual Info: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

1E14

Abstract: 2E12 FRK260D FRK260H FRK260R Rad Hard in Fairchild for MOSFET
Contextual Info: FRK260D, FRK260R, FRK260H 46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 46A, 200V, RDS on = 0.070Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2E12

Abstract: 3E12 FRK460D FRK460H FRK460R Rad Hard in Fairchild for MOSFET
Contextual Info: FRK460D, FRK460R, FRK460H 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 17A, 500V, RDS on = 0.400Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

FRK250H

Abstract: 1E14 2E12 FRK250D FRK250R Rad Hard in Fairchild for MOSFET PHOTO TRANSISTOR
Contextual Info: FRK250D, FRK250R, FRK250H 27A, 200V, 0.100 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 27A, 200V, RDS on = 0.100Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

frk150

Abstract: 2E12 FRK150D FRK150H FRK150R Rad Hard in Fairchild for MOSFET
Contextual Info: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 40A, 100V, RDS on = 0.055Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

FRK260

Contextual Info: FRK260D, FRK260R, FRK260H 46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 46A, 200V, RDS on = 0.070Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

SEM 238

Abstract: 1E14 2E12 FRK254D FRK254H FRK254R Rad Hard in Fairchild for MOSFET
Contextual Info: FRK254D, FRK254R, FRK254H 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 20A, 250V, RDS on = 0.170Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

FRK264R

Abstract: 1E14 2E12 FRK264D FRK264H Rad Hard in Fairchild for MOSFET
Contextual Info: FRK264D, FRK264R, FRK264H 34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 34A, 250V, RDS on = 0.120Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2N6277

Abstract: 2N6277 applications
Contextual Info: 2N6277 SILICON NPN HIGH-POWER TRANSISTOR PACKAGE STYLE TO- 204AE DESCRIPTION: The 2N6277 Power Transistor is Designed for High Current Switching and Amplifier Applications. MAXIMUM RATINGS 5O A Ie 1OO A PEAK IB 2O A VeE 15O V Pd is s 25O W @ Te " 25 0C Tj

1E14

Abstract: 2E12 FRK9260D FRK9260H FRK9260R Rad Hard in Fairchild for MOSFET
Contextual Info: FRK9260D, FRK9260R, FRK9260H 26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 26A, -200V, RDS on = 0.200Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2E12

Abstract: FRK160D FRK160H FRK160R Rad Hard in Fairchild for MOSFET
Contextual Info: FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 50A, 100V, RDS on = 0.040Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

2E12

Abstract: FRK9150D FRK9150H FRK9150R Rad Hard in Fairchild for MOSFET
Contextual Info: FRK9150D, FRK9150R, FRK9150H 26A, -100V, 0.125 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 26A, -100V, RDS on = 0.125Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

IRF035

Abstract: IRF034
Contextual Info: HE D I 4Ô55MS2 □ 0G*i02b *1 | Data Sheet No. PD-9.585A INTERNATIONAL R ECTIFIER INTERNATIONAL RECTIFIER IO R AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF034 IRFQ35 : N -C H A N N E L 60 Volt, 0.050 Ohm HEXFET TO-204AE TO-3 Hermetic Package

Contextual Info: HARRIS SEMICOND SECTOR 4DE D B 4302271 GÜ33747 FRK9460D OBJECTIVE HARRIS • RCA • BE • 4 •HAS 10A, -500V RDS on =1,20n INTERSIL This Objective Data Sheet Represents the Proposed Device Performance. Radiation-Hardened P-Channel Power MOSFET TO-204AE

ec a063

Abstract: IRF254 6710 mosfet
Contextual Info: HE D I 4flSS4S2 OCICHIEO 7 | Data Sheet No. PD-9.589A INTERNATIONAL R E C T IF IE R T-39-13 INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED IRF254 IRF25S HEXFET TRANSISTORS iJ IM-CHAIMIMEL 250 Volt, 0.14 Ohm, HEXFET TO-204AE TO-3 Hermetic Package

Contextual Info: m 2N6277 \ \ SILICON NPN HIGH-POWER TRANSISTOR PACKAGE STYLE TO-204AE DESCRIPTION: 1.550 The 2N6277 Power Transistor is Designed for High Current Switching and Amplifier Applications. MAXIMUM RATINGS lc 50 A 100 A PEAK Ib 20 A V ce 150 V P diss 250 W @ Tc = 25 °C

HARRIS SEMICONDUCTOR APPLICATION NOTES

Contextual Info: ^ U H a r r is U S E M I C O N D U C T O R FRK254D, FRK254R, F fí K2S4H 20A, 250V, 0.170 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 20A, 250V, RDS on = 0.170Q TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts

GG 06

Abstract: VN35010
Contextual Info: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (5) Max (V) Ciss Max (F) tr Max (s) tf Max (8) Toper Max (OC) Package 5tyle N-Channel Enhancement-Type, (Co nt' d) 5 10 UFN733 2N6759 SFN333 MTM5N35

power transistors cross reference

Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products

MJL4281A

Contextual Info: Bipolar Power Transistors In Brief . . . Page ON Semiconductor’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3. We also have

TRANSISTORS 132 GD

Abstract: IRF150 kiv-8 IRF151 circuits of IRF150
Contextual Info: IRF150, IRF151, IRF152, IRF153 Semiconductor 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power