TO-218 PACKAGE Search Results

FREDFETs

Contextual Info: SELECTION GUIDE - FREDFETs V BR DSS (V ) 500 500 500 500 500 Ì* Id max (A) Type Package (Q ) 0.450 0.650 0.850 0.850 1.500 6.50 5.00 4.40 4.40 2.50 STH13N50D STH10N50D STH9N50D STP8N50D STP5N50D TO-218 TO-218 TO-218 TO-220 TO-220 ¿V 1D(max) Plot (A) (W)

triac 239

Abstract: to239 press-fit triac to202-3
Contextual Info: 15.0 15.0 SENSITIVE GATE UL RECOGNIZED NO NO NO NO NO YES YES YES YES NO YES YES YES NO NO NO YES NO NO NO NO NO NO 25 YES NO 25 YES YES YES YES 8 10 12 14 14 14 16 18 18 18 25 16.0 TO-218 YES NO 16.0 TO-218 NO NO 25.0 TO-218 YES NO 25.0 TO-218 NO NO 25.0

LT 210D

Abstract: LM318F
Contextual Info: LM118/218/318 High-Speed O perational Am plifier Distinctive Characteristics • Electrically tested and optically inspected dice for hybrid manufacturers. • The LM118/218/318 are functionally, electrically, and pin-for-pin equivalent to the National LM118/218/318

LM318F

Abstract: AM318 lm118d 218F
Contextual Info: Am118/218/318 High-Speed Operational Amplifier Distinctive Characteristics The A m 1 18/218/318 are functionally, electrically, and pin-for-pin equivalent to the National LM 118/218/318 • Slew rate 70V/^is • Small signal bandwidth 15MHz • Internal frequency compensation

LM318F

Abstract: LM318L LMI18D a1869 lm318n
Contextual Info: LM118/218/318 High-Speed O perational Am plifier Distinctive Characteristics • • The LM118/218/318 are functionally, electrically, and pin-for-pin equivalent to the National LM118/218/318 • Slew rate: 70V/^is • Small signal bandwidth: 15MHz • Internal frequency compensation

Contextual Info: SIDACtor Protection Thyristors High Surge Current Protection 5kA Series - TO-218 RoHS Description The 5kA Series are SIDACtor® devices designed to protect equipment located in high exposure environments from severe overvoltage transients. Packaged in a robust TO-218 package, the 5kA Series is

TO218 package

Abstract: marking p1900me JESD22-A101 P1500ME P1500MEL P1900ME P1900MEL P2300ME P2300MEL TIA-968-A
Contextual Info: SIDACtor Protection Thyristors High Surge Current Protection 5kA Series - TO-218 Description The 5kA Series are SIDACtor® devices designed to protect equipment located in high exposure environments from severe overvoltage transients. Packaged in a robust TO-218 package, the 5kA Series is

Contextual Info: SIDACtor Protection Thyristors High Surge Current Protection 5kA Series - TO-218 Pb e3 RoHS Description The 5kA Series are SIDACtor® devices designed to protect equipment located in high exposure environments from severe overvoltage transients. Packaged in a robust TO-218 package, the 5kA Series is

TO-218 Package

Abstract: TO218 package JESD22-A101 P1500ME P1500MEL P1900ME P1900MEL P2300ME P2300MEL TIA-968-A
Contextual Info: SIDACtor Protection Thyristors High Surge Current Protection 5kA Series - TO-218 Description The 5kA Series are SIDACtor® devices designed to protect equipment located in high exposure environments from severe overvoltage transients. Packaged in a robust TO-218 package, the 5kA Series is

Contextual Info: SIDACtor Protection Thyristors High Surge Current Protection 5kA Series - TO-218 Description The 5kA Series are SIDACtor® devices designed to protect equipment located in high exposure environments from severe overvoltage transients. Packaged in a robust TO-218 package, the 5kA Series is

Contextual Info: BDW83C HIGH CURRENT SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION The BDW83C is a silicon epitaxial-base NPN power monolithic Darlington mounted in Jedec TO-218 plastic package. It is intended for use in power linear and switching applications. 3 2 1 TO-218

erf7530

Abstract: 100 watt hf mosfet 12 volt ERF*7530 100 watt hf mosfet 80 watt hf mosfet ERF-7530 erf7530 mosfet ekl components ERF7530E MAR 703 MOSFET TRANSISTOR
Contextual Info: ERF7530 RF Power MOSFET - 30MHz / 75 Watt PEP DESCRIPTION The ERF7530 is a MOSFET transistor developed for RF power amplifier applications in the HF frequency range. High power in a TO-218 package for an excellent ‘watt per dollar’ value. TO-218 PACKAGE OUTLINE & MARKINGS

LM318L

Abstract: LM318D 57AC LM318 LM318F lm118d LM118 DIE LM218H LD318 LM318H
Contextual Info: LM118/218/318 H ig h -S p ee d O p e ra tio n a l A m p lifie r Distinctive Characteristics • The LM118/218/318 are functionally, electrically, and pin-for-pin equivalent to the National LM118/218/318 • Slew rate: 70 V /n s • Small signal bandwidth: 15M H z

b1625

Abstract: EL200 107D 204C 213B
Contextual Info: TO-218 Wideband RF/Pulse Transformers .5-500 MHz L6RIL GUARANTEED MINIMUM PERFORMANCE DATA TYPICAL PERFORMANCE :h:ft / SPECIFICATIONS FOR MODEL TO-218 Type 50 cfim unbalanced 200 ohm unbalanced - 1 dB Bandwidth, MHz Midband insertion loss dB VSWR .5-500

BW38-2G

Abstract: 513002b02500g BW50-2G BW-50 heat sink to220 513201b02500g heat sink for TO220
Contextual Info: TO-220 & TO-218 & TO-247 Heat Sinks Grease & Epoxy page112 Air Velocity—Feet Per Minute 400 200 600 800 100 Wide extruded heat sink with unequal channel widths on front and back can accommodate a TO-220, TO-218, or TO-247 device. Includes two solderable mounting pins which permit

Contextual Info: SIEMENS TEMPFET BTS 950 Preliminary Data VDS lD = 500 V = 9.0 A ^D S o n = • • • • 0 -8 TO-218 ^ N channel Enhancem ent m ode Tem perature sensor with th yristo r cha racteristic Package: TO-218 / 5 ') Type Ordering code BTS 950 Q 67078-A 5850-A 2

buz357

Contextual Info: SIEMENS SIPMOS Power Transistors • • • BUZ 357 N channel Enhancem ent mode Avalanche-rated Type V Ds Id BUZ 357 1000 V BUZ 358 1000 V ^ D S on Package 1> Ordering Code 5.1 A 2.0 £2 TO -218 AA C 67078-S3110-A2 4.5 A 2 . 6 £2 TO -218 AA C 67078-S3111-A2

DIODE BUZ

Abstract: sis 661
Contextual Info: SIEMENS BUZ 346 SIPMOS Power Transistors • • • N channel Enhancement mode Avalanche-rated Ordering Code Tc ^DS on Package 1> 58 A 73 °C 0.018 n TO -218 AA C67078-S3120-A2 58 A 73 ‘ C 0.018£2 TO -218 AA C67078-S3120-A 4 Type VDS ¡a BUZ 346 50 V

Contextual Info: TO-218 Wideband RF/Pulse Transformers .5-500 MHz L6RIL GUARANTEED MINIMUM PERFORMANCE DATA SPECIFICATIONS FOR MODEL TO-218 Type 50 chm unbalanced 200 ohm unbalanced - 1 dB Bandwidth. MHz Midband insertion loss dB VSWR .5-500 75 2.25:1 NOTE: - 1 dB bandwidth is measured relative

ISS 355

Abstract: BUZ355A
Contextual Info: SIEMENS SIPMOS Power Transistors • • BUZ 355 BUZ 356 N channel Enhancement mode Type VDS To ^DS on Package 1> B U Z 355 800 V 6.0 A 29 'C 1.5 Q TO-218 AA C67078-A3107-A2 B U Z 356 800 V 5.3 A 25 'C 2 .0 ÍÍ TO-218 AA C67078-A3108-A2 Ordering Code

Contextual Info: SIEMENS BUZ 310 SI PMOS Power Transistors N channel Enhancement mode I Type </> • • ^DS on Package 1> Ordering Code BUZ 310 1000 V 2.5 A 5.0 Q TO-218 AA C67078-A3101-A2 BUZ 311 1000 V 2.3 A 6.0 n TO-218 AA C67078-A3102-A2 Maxim um Ratings Parameter

C67078-S3120-A2

Contextual Info: SIPMOS Power Transistors BUZ 346 BUZ 346 S2 ● N channel ● Enhancement mode ● Avalanche-rated Type VDS ID TC RDS on Package 1) Ordering Code BUZ 346 50 V 58 A 73 ˚C 0.018 Ω TO-218 AA C67078-S3120-A2 BUZ 346 S2 60 V 58 A 73 ˚C 0.018 Ω TO-218 AA

buz385

Abstract: buz 385
Contextual Info: SIEMENS SIPMOS Power Transistors • • • BUZ 384 N channel Enhancement mode FREDFET Type ^DS Id ^DS on Package 1> O rdering Code BUZ 384 500 V 10.5 A 0.6 n TO -218 AA C67078-A3209-A2 BUZ 385 500 V 9.0 A 0.8 Q TO -218 AA C67078-A3210-A2 Maxim um Ratings

0443 005 D R

Abstract: 2001 H1
Contextual Info: TO-218 SINGLE LEAD JEDEC STYLE TO-218 PLASTIC PACKAGE E INCHES A A1 ØP Q H1 D TERM. 2 q L2 L1 TERM. 1 L R L3 15o c b J1 SYMBOL MIN MAX MILLIMETERS MIN MAX NOTES A 0.18 0.195 4.70 4.95 - A1 0.05 0.062 1.48 1.57 - b 0.43 0.443 c 0.01 0.022 D 0.80 0.820 20.3