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    TO-261AA PACKAGE Search Results

    TO-261AA PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM
    		Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    TO-261AA PACKAGE Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TO-261AA Package
    		International Rectifier Case Outline and Dimensions Original PDF 61.46KB 3

    TO-261AA PACKAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FL014

    Abstract: 314P
    Contextual Info: PD- 95227 IRFL014PbF _Lead-Free 1 IRFL014PbF 2 IRFL014PbF SOT-223 TO-261AA Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HEXF ET PRODUCT MARKING T HIS IS AN IRF L014 INT ERNAT IONAL RECT IF IER LOGO


    Original     		IRFL014PbF OT-223 O-261AA) FL014 314P PDF

    FL014

    Abstract: TO261AA IRFL014PBF 314P irf sot223 L014
    Contextual Info: PD- 95227 IRFL014PbF _Lead-Free www.irf.com 1 04/28/04 IRFL014PbF 2 www.irf.com IRFL014PbF www.irf.com 3 IRFL014PbF 4 www.irf.com IRFL014PbF www.irf.com 5 IRFL014PbF 6 www.irf.com IRFL014PbF www.irf.com 7 IRFL014PbF SOT-223 TO-261AA Package Outline Dimensions are shown in milimeters (inches)


    Original     		IRFL014PbF OT-223 O-261AA) FL014 TO261AA IRFL014PBF 314P irf sot223 L014 PDF

    fl014

    Abstract: 314P TO261AA
    Contextual Info: PD- 95228 IRFL210PbF • Lead-Free www.irf.com 1 04/28/04 IRFL210PbF 2 www.irf.com IRFL210PbF www.irf.com 3 IRFL210PbF 4 www.irf.com IRFL210PbF www.irf.com 5 IRFL210PbF 6 www.irf.com IRFL210PbF www.irf.com 7 IRFL210PbF SOT-223 TO-261AA Package Outline Dimensions are shown in milimeters (inches)


    Original     		IRFL210PbF OT-223 O-261AA) fl014 314P TO261AA PDF

    E1005

    Abstract: SOT223 LAND PATTERN MD-SOT223-002-a SOT-223 package outline
    Contextual Info: PACKAGE MECHANICAL INFORMATION SOT-223 Package Outline Dimensions TO-261AA, JEDEC Publication 95 4-Pin Plastic Small Outline Surface Mount 2.85 - 3.10 0.112 - 0.122 4 6.70 - 7.30 (0.264 - 0.287) 1 2 3 2.30 TYP. (0.090) 4.60 TYP. (0.181) 6.30 - 6.70 (0.248 - 0.264)


    Original     		OT-223 O-261AA, MD-SOT223-002-a TSP0504 E1005 SOT223 LAND PATTERN MD-SOT223-002-a SOT-223 package outline PDF

    Contextual Info: Power Packages SOT-223 TO-261AA SMALL OUTLINE TRANSISTOR D E INCHES A D1 A1 E1 c e L 0-10 MAX MIN MAX NOTES A 0.063 0.070 1.60 1.78 - A1 0.0008 0.004 0.02 0.10 - b 0.026 0.033 0.65 0.85 - c 0.010 0.014 0.25 0.35 - D 0.248 0.264 6.30 6.70 D1 0.116 0.124 2.95


    Original     		OT-223 O-261AA) O-261 PDF

    sot-223 body marking D K Q F

    Contextual Info: MOTOROLA Order this document by MMFT108T1/D SEMICONDUCTOR TECHNICAL DATA T Field Effect Transistor N-Channel Enhancement-Mode Logic Level SOT-223 MMFT108T1 TM OS 2 ,4 DRAIN TMOS FET TRANSISTOR N-CHANNIEL — ENHANCEMENT CASE 318E-04, STYLE 3 SOT-223 TO-261AA


    OCR Scan     		MMFT108T1/D OT-223 MMFT108T1 318E-04, O--261AA) 1-80CM41-2447 sot-223 body marking D K Q F PDF

    diode MARKING c9

    Abstract: MV7005T1 V7005
    Contextual Info: MV7005T1* CASE 318E-04, STYLE 2 TO-261AA MAXIMUM RATINGS Symbol Value Unit Reverse Voltage Rating Vr 15 Volts Forward Current if 50 mA Pd 280 28 mW/cC Total Power Dissipation @ T /\ = 25: C Derate above 25-C Junction Temperature Storage Temperature Range Tj


    OCR Scan     		MV7005T1* 318E-04, O-261AA OT-223 V7005_ MV7005T1, MV7005T3 diode MARKING c9 MV7005T1 V7005 PDF

    Contextual Info: Power Packages SOT-223 TO-261AA SMALL OUTLINE TRANSISTOR D INCHES A D1 E A1 E1 c e L b SYMBOL MIN MAX MIN MAX NOTES A 0.063 0.070 1.60 1.78 - A1 0.0008 0.004 0.02 0.10 - b 0.026 0.033 0.65 0.85 - c 0.010 0.014 0.25 0.35 - D 0.248 0.264 6.30 6.70 D1 0.116


    Original     		OT-223 O-261AA) O-261 330mm 100mm EIA-481 PDF

    Contextual Info: FS02.N SENSITIVE GATE SCR On-State Current Gate Trigger Current 1.25 Amp < 200 µA Off-State Voltage 400 V ÷ 800 V TO-261AA SOT-223 FEATURES • Glass/passivated die junctions • Low current SCR • Low thermal resistance • High surge current capability


    Original     		O-261AA OT-223) 2011/65/EU 2002/96/EC J-STD-020, MIL-STD-750 J-STD-002 JESD22-B102. PDF

    751A-02

    Abstract: 318D-03 751B-03
    Contextual Info: 2 CASE 318-07 SOT-23 TO-236AB CASE 318D-03 SC-59 CASE 646-06 1 CASE 751A-02 SO-14 4r 3 CASE 318E-04 SOT-223 (TO-261AA) CASE 648-08 1 Small-Signal Tuning and Switching Diodes CASE 751B-03 SO-16 Packaging options include plastic DIPs and surface mount packages. Most SOT-23, SC-59 and SOT-223 package devices


    OCR Scan     		OT-23 O-236AB) 318D-03 SC-59 318E-04 OT-223 O-261AA) 51A-02 SO-14 751B-03 751A-02 PDF

    Contextual Info: PZTA42T1* CASE 318E-04, STYLE 1 TO-261AA M A X IM U M R A T IN G S Rating Symbol Value v CEO 300 Vdc Collector-Base Voltage (Open Emitter) VCBO 300 Vdc Emitter-Base Voltage (Open Collector) v EBO Collector-Em itter Voltage (Open Base) Collector Current (DC)


    OCR Scan     		PZTA42T1* 318E-04, O-261AA) OT-223 PDF

    transistor P2P

    Contextual Info: PZTA92T1* CASE 318E-04, STYLE 1 TO-261AA M AXIM UM RATINGS Unit Symbol Value Collector-Emitter Voltage v CEO -3 0 0 Vdc Collector-Base Voltage v CBO -3 0 0 Vdc Emitter-Base Voltage Ve b o - 5 .0 Vdc 'C -5 0 0 mAdc Total Power Dissipation up to T ^ = 25 C‘


    OCR Scan     		PZTA92T1* 318E-04, O-261AA) OT-223 transistor P2P PDF

    Contextual Info: PZTA96T1* CASE 318E-04, STYLE 1 TO-261AA M A XIM U M RATINGS Rating Symbol Value Unit v CEO - 450 Vdc Collector-Base Voltage v CBO - 450 Vdc Emitter-Base Voltage Ve b o -5 .0 Vdc 'C -5 0 0 mAdc Collector-Emitter Voltage Collector Current Total Power Dissipation up to T /\ = 25 C*


    OCR Scan     		PZTA96T1* 318E-04, O-261AA) OT-223 PDF

    fl014

    Abstract: FL014 Example FL014 datasheet irfl4310 IRFL014 EIA-541 sot-223 code marking marking code 4X 10e1l TO261AA
    Contextual Info: IRFL4310 Package Outline HEXFET SOT-223 TO-261AA Outline E LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN B1 3 - SOURCE 0.10 (.004) M C B M 4 - DRAIN D -B- 3 3 H 0.20 (.008) M C A M -A1 2 A L1 0.10 (.004) M C B M MAX MIN MAX 1.55 1.80 .061 .071 B 0.65 0.85 .026 .033


    Original     		IRFL4310 OT-223 O-261AA) IRFL014 FL014 fl014 FL014 Example FL014 datasheet irfl4310 IRFL014 EIA-541 sot-223 code marking marking code 4X 10e1l TO261AA PDF

    Contextual Info: PZT2907AT1* M A X IM U M R A T IN G S Rating Collector-Emitter Voltage Symbol Value CASE 318E-04, STYLE 1 TO-261AA Unit v CEO -6 0 Vdc Collector-Base Voltage VCBO -6 0 Vdc Emitter-Base Voltage Ve b O - 5.0 Vdc Collector Current 'c -6 0 0 mAdc Total Power Dissipation, T ^ = 25 ‘C*


    OCR Scan     		PZT2907AT1* PDF

    tic 223

    Abstract: liA SOT23 7S1B-03
    Contextual Info: CASE 29-04 T0 -2 2 6 AA TO-92 1 3 2 CASE 318E-04 (TO-261AA) SOT-223 CASE 318-07 (TO-236AB) SOT-23 14 CASE 646-06 (TO-116) Plastic-Encapsulated Transistors CASE 7S1B-03 SO-16 M o to ro la 's p la s tic tra n s is to rs and d io d e s e n co m p a ss huncreds of devices spanning the gamut from general-purpose


    OCR Scan     		O-236AB) OT-23 318E-04 O-261AA) OT-223 O-116) 7S1B-03 SO-16 O-116 OT-23, tic 223 liA SOT23 PDF

    AKD SOT223

    Contextual Info: PZT2222AT1* CASE 318E-04, STYLE 1 TO-261AA M A X IM U M R A T IN G S R atin g S ym bol V alue C o lle cto r-E m itte r V oltage v CEO 40 Vdc C o lle cto r-B a se V oltage v CB O 75 Vdc E m itter-B ase Voltage (O p en C ollector) v EBO 60 V dc 'C 600 m A dc


    OCR Scan     		PZT2222AT1* 318E-04, O-261AA) OT-223 PZT2222AT1 AKD SOT223 PDF

    Contextual Info: PZTA42T1* CASE 318E-04, STYLE 1 TO-261AA M A X IM U M R A T IN G S Rating Symbol Value C o lle c to r - E m itte r V o lta g e ( O p e n B a s e ) v CEO 300 Vdc COLLECTOR C o lle c to r - B a s e V o lta g e ( O p e n E m itte r) VCBO 300 Vdc 24 v EBO 6.0


    OCR Scan     		PZTA42T1* 318E-04, O-261AA) 111Pij PDF

    Contextual Info: PZTA64T1* CASE 318E-04, STYLE 1 TO-261AA M AXIMUM RATINGS Rating Symbol Value C o lle c to r - E m itte r V o lta g e VCES - 30 Vdc C o lle c to r - B a s e V o lta g e VCBO -3 0 Vdc ve b o - 10 Vdc 1.5 W a tts - 500 m Adc E m itte r - B a s e V o lta g e


    OCR Scan     		PZTA64T1* 318E-04, O-261AA) OT-223 PDF

    TGAM1

    Abstract: SOT-223 AKD AKD SOT223
    Contextual Info: PZTA96T1* CASE 318E-04, STYLE 1 TO-261AA M AXIMUM RATINGS Rating Symbol Value Unit C o lle cto r-E m itte r V oltage v CEO -4 5 0 Vdc C o lle cto r-B a se V oltage VCBO -4 5 0 V dc E m itter-B ase Voltage v EBO - 5.0 V dc 'c - 500 m A dc C o lle cto r C u rre n t


    OCR Scan     		PZTA96T1* 318E-04, O-261AA) OT-223 TGAM1 SOT-223 AKD AKD SOT223 PDF

    transistor P2D

    Abstract: SOT-223 AKD AKD SOT223
    Contextual Info: PZTA92T1* CASE 318E-04, STYLE 1 TO-261AA MAXIMUM RATINGS Rating Symbol Value Unit v CEO -3 0 0 V dc C o lle cto r-B a se V oltage v CBO -3 0 0 V dc E m itter-B ase V oltage v EBO - 5.0 Vdc 'C -5 0 0 m A dc C o lle cto r-E m itte r Voltage C o lle cto r C urrent


    OCR Scan     		PZTA92T1* 318E-04, O-261AA) OT-223 transistor P2D SOT-223 AKD AKD SOT223 PDF

    TO-261AA Package

    Abstract: IT 223 SOT223 nu FL014
    Contextual Info: IRLL014N Package Outline SOT-223 TO-261AA Outline Part Marking Information SOT-223 E X A M P L E : T H IS IS A N IR FL 0 14 P A R T NU M B E R IN TE RN A TIO NA L RE CT IF IE R LO G O F L0 14 31 4 TOP 8 W A FER LO T CO D E XXXXXX D A TE CO D E (Y W W ) Y = LA S T D IG IT O F TH E Y E A R


    Original     		IRLL014N OT-223 O-261AA) TO-261AA Package IT 223 SOT223 nu FL014 PDF

    sot-223 body marking D K Q F

    Abstract: MV7005T1 pd 223 V7005
    Contextual Info: MOTOROLA Order this document by MV7005T1/D SEMICONDUCTOR TECHNICAL DATA MV7005T1 Silicon Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high–tuning ratio applications. The device is housed in the SOT-223 package which is designed for


    Original     		MV7005T1/D MV7005T1 OT-223 sot-223 body marking D K Q F MV7005T1 pd 223 V7005 PDF

    marking 651 sot223

    Contextual Info: ON Semiconductort PZT651T1 NPN Silicon Planar Epitaxial Transistor ON Semiconductor Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for medium power surface


    Original     		PZT651T1 inch/1000 PZT651T3 inch/4000 PZT751= marking 651 sot223 PDF