TO-92 PACKAGE DIMENSIONS DIODE INC Search Results

P4 diode

Abstract: RHS 25 105 OHMS J 300 Amps SCR 18XX00 R7S0 scr control circuit for welding Z7A marking TT 80 SCR MODULE scr 209 PEC 816
Contextual Info: POWEREX INC 1SE » • 72T4b51 0003^07 T ■ f O M Æ V K G i r POW-R-BRIK Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 72.75.15 P h d S B C O tltfO l

47AC

Abstract: IRGPC30UD2 MJ10Q
Contextual Info: PD - 9.1112 IRGPC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for high operating frequency over 5kHz

BFC50

Abstract: BY 126 DIODE DYNAMIC RESISTANCE 1428-TR
Contextual Info: SEME BFC50 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69

IRGPC30UD2

Contextual Info: PD - 9.1112 IRGPC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes • Optimized for high operating frequency over 5kHz

0760F

Abstract: APT14050JVFR 115a 0992
Contextual Info: APT14050JVFR 23A 0.500Ω Ω 1400V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT14050JVFR

Contextual Info: APT14050JVFR 23A 0.500Ω Ω 1400V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT55M85JFLL

Contextual Info: APT55M85JFLL 550V POWER MOS 7TM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel

fast diode SOT-227

Contextual Info: APT8024JFLL 800V 29A 0.240W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package

25C2240

Abstract: APT5010JFLL
Contextual Info: APT5010JFLL 500V POWER MOS 7TM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel

3180 diode

Contextual Info: APT4020BVR 400V 23A 0.200Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

Contextual Info: POUEREX INC T1D D • 7 5 T 4 tiS l D D D lf l n 2 ■ Reverse Conducting Thyristors IT W to JW Tc-65°C Note 2 (Amps) 60 <cb81 m C lT‘t/lmt I tsm / I r s m (Amps x 10*) @ &3 ms SO Hz 60 Hz (4>sec x Toy 1.09 1.09 L2 60 0 65*0 1B0 I 77*C 2.7 3 e o & e i'c

tf8050

Abstract: APT10M19BVFR
Contextual Info: APT10M19BVFR 100V POWER MOS V 75A 0.019Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

t 935

Abstract: 1r 10e T935
Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6264 PACKAGE DIMENSIONS DESCRIPTION The 1N6264 is a 940nm LED in a narrow angle, TO-46 package. SEATING a FEATURES ST1332 Good optical to mechanical alignment SYMBOL INCHES MIN. A <£b 40 e 01 h MAX MILLIMETERS

ST1332

Abstract: A 3202 DIODE
Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX14, CQX16 PACKAGE DIMENSIONS ' The CQX14/16 are 940nm LEDs in narrow angle, TO-46 packages. SEATING PLANE FEATURES ST1332 • Good optical to mechanical alignment SYMBOL INCHES MIN. A MILLIMETERS MAX, MIN. .255

Contextual Info: 15E D POWEREX INC • 7ST4bSl QQG3bSS ñ E D _ E D _ ED41 _ Pow erex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 4 1 2 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 ■ ■ T -Ä S -Ä 3 13

Contextual Info: PD - 95535 IRFB23N15DPbF IRFS23N15DPbF IRFSL23N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l l Lead-Free VDSS RDS on max ID 150V 0.090Ω 23A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

APT10M19BVR

Contextual Info: APT10M19BVR 75A 0.019Ω 100V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

Contextual Info: APT10M19BVR 75A 0.019Ω 100V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

IRF Power MOSFET code marking

Abstract: AN1001 AN-994 IRFB23N15D IRFS23N15D IRFSL23N15D
Contextual Info: PD - 95535 IRFB23N15DPbF IRFS23N15DPbF IRFSL23N15DPbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l l Lead-Free VDSS RDS on max ID 150V 0.090Ω 23A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

APT10M19BVR

Contextual Info: APT10M19BVR 75A 0.019Ω 100V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

st12

Abstract: CQX14 CQX16 ST1332
Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX14, CQX16 PACKAGE DIMENSIONS DESCRIPTION The CQX14/16 are 940nm LEDs in narrow angle, TO-46 packages. SEATING FEATURES ST1332 Good optical to mechanical alignment SYMBOL INCHES MIN. A MAX. MILLIMETERS MIN. .255

Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6265 PACKAGE DIMENSIONS The 1N6265 is a 940nm LED in a wide angle, TO-46 package. SEATING ST1331 SYMBOL A èb ¿Di e • Good optical to mechanical alignment INCHES MIN. MAX. .155 .016 .021 .209 .230 .180 .187

Contextual Info: [*13 GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX14, CQX16 PACKAGE DIMENSIONS DESCRIPTION The CQX14/16 are 940nm LEDs in narrow angle, TO-46 packages. SEATING FEATURES • Good optical to mechanical alignment SYMBOL INCHES MIN. MILLIMETERS MAX. A MIN.

Contextual Info: APT10M19SVR 75A 0.019Ω 100V POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®