TO1130NM Search Results
TO1130NM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: BP103 Silicon NPN Phototransistor Characteristics TA=25°C FEATU R ES • Especially suitable for applications from 420nm to1130nm • High linearity • TO-18, base plate, transparent epoxy resin Ians, with base connection • Spectral sensitivity selections |
OCR Scan |
BP103 420nm to1130nm BP103 EM0t59a PCE250= | |
BPY62Contextual Info: BPY62 Silicon NPN Phototransistor Characteristics TA=25°C, X=950 nm Parameter APPLICATIO NS • Photointerrupters • Industrial electronics • For control and drive circuits DESCRIPTIO N Unit ^Smax 850 nm Spectral Sensitivity Range X 420 to 1130 Radiant Sensitive Area |
OCR Scan |
BPY62 1000lx, BPY62 |