TO202 TRANSISTOR Search Results

Contextual Info: NTE296 Silicon PNP Transistor General Purpose Amplifier Description: The NTE296 is a silicon PNP transistor in a TO202 type case designed for general purpose applications requiring high breakdown voltages, low saturation voltages and low capacitance. Absolute Maximum Ratings:

NTE210

Abstract: NTE211
Contextual Info: NTE210 NPN & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type pack­ age designed for general purpose, medium voltage, medium power amplifier and driver applications

NTE49

Abstract: NTE50
Contextual Info: NTE49 NPN & NTE50 (PNP) Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver Description: The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications.

NTE269

Abstract: TO202 package NTE268 SILICON COMPLEMENTARY transistors darlington 956b
Contextual Info: NTE268 NPN & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require-

npn general purpose high voltage amplifier

Abstract: NTE49 NTE50
Contextual Info: NTE49 NPN & NTE50 (PNP) Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver Description: The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications.

NTE171

Contextual Info: NTE171 Silicon NPN Transistor Audio/Video Amplifier Description: The NTE171 is a silicon NPN transistor in a TO202 type case designed for high–voltage TV video and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators.

pnp 300v

Abstract: NTE296
Contextual Info: NTE296 Silicon PNP Transistor General Purpose Amplifier Description: The NTE296 is a silicon PNP transistor in a TO202 type case designed for general purpose applications requiring high breakdown voltages, low saturation voltages and low capacitance. Absolute Maximum Ratings:

NTE211

Abstract: NTE210
Contextual Info: NTE210 NPN & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver Description: The NTE210 (NPN) and NTE211 (PNP) are silicon complementary transistors in a TO202 type package designed for general purpose, medium voltage, medium power amplifier and driver applications

npn general purpose high voltage amplifier

Abstract: NTE49 NTE50
Contextual Info: NTE49 NPN & NTE50 (PNP) Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver Description: The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications.

NTE171

Contextual Info: NTE171 Silicon NPN Transistor Audio/Video Amplifier Description: The NTE171 is a silicon NPN transistor in a TO202 type case designed for high−voltage TV video and chroma output circuits, high−voltage linear amplifiers, and high−voltage transistor regulators.

TO202N

Abstract: NTE272 NTE273 ic 555 audio amplifiers
Contextual Info: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.

Complementary Darlington Audio Power Amplifier

Abstract: PNP Monolithic Transistor Pair ic 555 audio amplifiers npn darlington transistor 150 watts darlington complementary power amplifier NTE272 NTE273 application note ic 555
Contextual Info: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.

Contextual Info: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.

NTE186

Abstract: NTE187
Contextual Info: NTE186 NPN & NTE187 (PNP) Silicon Complementary Transistors General Purpose Output & Driver for Audio Amplifier Description: The NTE186 (NPN) and NTE187 (PNP) are silicon complementary transistors in a TO202 type case designed for use as output and driver stages of amplifiers operating at frequencies from DC to greater

darlington complementary power amplifier

Abstract: PNP Relay Driver SILICON COMPLEMENTARY transistors darlington nte269 TO202 package NTE268 COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS current amplifier note darlington
Contextual Info: NTE268 NPN & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential requirement, low power lamp and relay drivers and power drivers for high–current applications such as voltage regulators.

D43C8

Abstract: nsd6181 NSDU51
Contextual Info: NATL SEflICOND DISCRETE E2E D • bS D113Q 0037767 5 ■ T-27-0/ PNP Medium Power Transistors by Ascending Vce0 Part No. Max (m A /V) Vce (sat) (V) Max 150 300 10/1 100/1 100/2 100/2 1A/1 500/1 0.5 0.5 0.5 0.5 0.7 0.7 1000 1A 500 500 1000 1000 TO-237 TO-237

BF759

Abstract: BF858 TO202
Contextual Info: TO-202 Plastic Package Transistors NPN Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. PD ^CBO ^CEO ^ EBO (V) Min (V) Min (V) Min BD839 45 45 5 2 BD841 60 60 5 BDB43 100 80 BF759 350 350 (W) Ta=25 "C ¡CBO (A) (MA)

2N6591

Contextual Info: NATL SEMICÔND DISCRETE 2SE ». • bSG1130 G0377Ô5 1 ■ NPN Medium Power Transistors by Ascending Vceo (V) Min NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 TN2102 65 40 2N5321 D40D10 D40D11 D40D13 D40D14 NSD6178 75 75 75 75 75 75 40 50 120 50 120

BF458

Abstract: TO202 bf459 transistor TO-202 transistor NPN TO-202 bf469 or equivalent TO-202 transistor BF869 equivalent BF469 TO-202 PNP
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN HIGH-VOLTAGE POWER TRANSISTORS TYPE NUMBER PACKAGE VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. 45 typ. >45 BF419 TO-126 250 300 6000 BF457 TO-126

NSD102

Abstract: D42C5 040e5 NSE180 2N4945 NSE871 d42c2 TO-202 transistor NPN NSDU05 2N6714
Contextual Info: NATL SEMICOND DISCRETE 5SE D • bSG1130 Ci a377a4 T ■ T-27-0! NPN Medium Power Transistors by Ascending Vceo Part No. Hfe a lc /V ce Vceo (V) NSE871 TN1711 ’ Vce (sat) (V) Ic/lb M ax (mA)/(mA) Min M ax (m A/V) 50 40 300 25/20 500/10 1.5 150 Package

bd817

Abstract: B0815 B0817 2SC2068 2SC2068R 2SC2068Y BF858 BF859 CSC2611 CSC2621
Contextual Info: TO-202 PLASTIC PACKAGE TRANSISTORS NPN No. 2SC2068 'C BO V CBO V ECO V EBO (V) (V) (V) (PA) Min Mir Min Max 300 300 5.0 1.0 « vCB hFE 300 300 5.0 1.0 Min 240 240 300 300 5.0 1.0 240 2SC2068Y 300 300 5.0 1.0 240 BF859 300 300 5.0 0.1 CSC2611 300 300 5.0

NSD134

Abstract: NSD459 NSD458 NSD133 NSE459 TO-202 D40N2 2N3440 nse458 2N6712
Contextual Info: NATL SEMICOND DISCRETE 52E D • T Z‘ 2~7~0/ bSG113Q 0D377flb 3 ■ NPN Medium Power Transistors by Ascending Vceo (continued) Part No. Vceo (V) Min Hfe @ lc/Vce Max ' (mA/V) Vce (sat) (V) Max lc/lb Package (mA)/(mA) PN7055 220 40 10/20 1.0 20 TO-92 D40P5

2A 5A10

Abstract: NSD106 NSD104 NSD6178 TO-202 transistor NPN 2N4239 2N5321 D40D10 D40D11 D40D13
Contextual Info: NATL SEMICÔND DISCRETE 2SE D- • bSG113Q GQ377âS 1 ■ 7"^/ NPN Medium Power Transistors by Ascending Vceo (Continued) H fe @ lc /V Ce Vce (sat) (V) ’ Vceo (V) Min Max (mA/V) NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 10/1 150/1 200/10 0.9 0.25

NSDU51

Abstract: D43C8 NSD6181 0410 2N4234 2N6726 2N6727 92PU51 92PU51A D41D1
Contextual Info: NATL SEMICOND DISCRETE S5E D • bSG113Q 0G377fl7 5 ■ T '21-0t PNP Medium Power Transistors by Ascending Vceo Part No. Vceo \»l Max (mA/V) V « (sat) (V) Max 150 300 10/1 100/1 100/2 100/2 1A/1 500/1 0.5 0.5 0.5 0.5 0.7 0.7 1000 1A 500 500 1000 1000 TO-237