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    TO204AE* MOS Search Results

    TO204AE* MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TO204AE* MOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    buz350 mosfet

    Abstract: DVD120T efm1394m160 SOT23 34N 2N6960 DVD020S MTH30N20 20/SGSP577 EFM139 MTE60N20
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Clsa Max (V) Max JF) tr Max (s) tf Max (s) Toper Max eC) Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 IAFJ240 BUZ37 BUZ31 BUZ34


    Original     		PDF 2100p 1800p IAFJ240 BUZ37 BUZ31 BUZ34 IXTL15N20 MTH15N20 MTM15N20 buz350 mosfet DVD120T efm1394m160 SOT23 34N 2N6960 DVD020S MTH30N20 20/SGSP577 EFM139 MTE60N20

    IRF150

    Abstract: MOSFET IRF150 12V 40A voltage regulators IRF152
    Text: IRF150, IRF151, IRF152, IRF153 S E M I C O N D U C T O R 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF150, IRF151, IRF152, IRF153 TA17421. IRF150 MOSFET IRF150 12V 40A voltage regulators IRF152

    RFK25P10

    Abstract: No abstract text available
    Text: i., One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RFH25P08, RFH25P10, RFK25P08, RFK25P10 -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs Features Description • -25A,-100V and-80V These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    Original     		PDF RFH25P08, RFH25P10, RFK25P08, RFK25P10 -100V and-80V RFH25P08 O-218AC RFK25P10

    IRF150CF

    Abstract: GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTF152 YTFP150 2SK747
    Text: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Max (V) Clsa Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style N-Channel Enhancement-Type, (Co nt' d) 5 10 BUZ349 BUZ349 SFN152 YTFP152


    Original     		PDF BUZ349 SFN152 YTFP152 YTF152 IRFP152 RFH35Nl0 RFK35Nl0 PB125N60HM PB125N60HP IRF150CF GENTRON 2SK747A EUM159M 2SK798 EFM159M179 YTFP150 2SK747

    2E12

    Abstract: 2N7322D 2N7322H 2N7322R 86 diode
    Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK9150 D, R, H 2N7322D, 2N7322R 2N7322H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 26A, -100V, RDS(on) = 0.125Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts


    Original     		PDF FRK9150 2N7322D, 2N7322R 2N7322H -100V, O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 2N7322D 2N7322H 2N7322R 86 diode

    AN7254

    Abstract: AN7260 AN9321 AN9322 RFK70N06
    Text: RFK70N06 S E M I C O N D U C T O R 70A, 60V, 0.014 Ohm, N-Channel Power MOSFET June 1997 Features Description • 70A, 60V The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFK70N06 RFK70N06 1-800-4-HARRIS AN7254 AN7260 AN9321 AN9322

    Untitled

    Abstract: No abstract text available
    Text: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK9160D, FRK9160R, FRK9160H -100V, O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD

    1E14

    Abstract: 2E12 FRK9260D FRK9260H FRK9260R
    Text: FRK9260D, FRK9260R, FRK9260H 26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 26A, -200V, RDS on = 0.200Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK9260D, FRK9260R, FRK9260H -200V, O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 FRK9260D FRK9260H FRK9260R

    2E12

    Abstract: FRK9160D FRK9160H FRK9160R
    Text: FRK9160D, FRK9160R, FRK9160H 40A, -100V, 0.085 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 40A, -100V, RDS on = 0.085Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK9160D, FRK9160R, FRK9160H -100V, O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 FRK9160D FRK9160H FRK9160R

    2E12

    Abstract: FRK160D FRK160H FRK160R
    Text: FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 50A, 100V, RDS on = 0.040Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK160D, FRK160R, FRK160H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 FRK160D FRK160H FRK160R

    2E12

    Abstract: FRK150D FRK150H FRK150R
    Text: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 40A, 100V, RDS on = 0.055Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK150D, FRK150R, FRK150H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 FRK150D FRK150H FRK150R

    RFK25P10

    Abstract: RFH25P "Harris Corporation 1998" RFK* Relay RFH25P08 RFH25P10 RFK25P08 TB334 rfh25
    Text: [ /Title RFH25 P08, RFH25P 10, RFK25P 08, RFK25P 10 /Subject (-25A, 100V, 80V, 0.150 Ohm, PChannel Power MOSFETs) /Author () /Keywords (25A, 100V a80V, 0.150 Ohm, PChannel Power MOSFETs) /Creator () /DOCIN FO pdfmark RFH25P08, RFH25P10, RFK25P08, RFK25P10


    Original     		PDF RFH25 RFH25P RFK25P RFH25P08, RFH25P10, RFK25P08, RFK25P10 -100V RFK25P10 RFH25P "Harris Corporation 1998" RFK* Relay RFH25P08 RFH25P10 RFK25P08 TB334 rfh25

    2E12

    Abstract: 3E12 FRK460D FRK460H FRK460R
    Text: FRK460D, FRK460R, FRK460H 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 17A, 500V, RDS on = 0.400Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK460D, FRK460R, FRK460H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 3E12 FRK460D FRK460H FRK460R

    1E14

    Abstract: 2E12 FRK264D FRK264H FRK264R
    Text: FRK264D, FRK264R, FRK264H 34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 34A, 250V, RDS on = 0.120Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRK264D, FRK264R, FRK264H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 FRK264D FRK264H FRK264R

    2N6763

    Abstract: 2N6764 IRF150 IRF442 IRF443 IRF840 IRF841 IRF842 IRF843 IRFP441
    Text: Material NATL This N-Channel Power MOSFETs N-Channel Power MOSFETs Continued 1600 350 150 E4 4 60 1600 350 150 E4 1.1 4 60 1600 350 150 E4 0.25 0.85 4 60 1600 350 150 E4 4 0.25 0.85 4 60 1600 350 150 E4 2 4 0.25 1.1 4 60 1600 350 150 E4 4.8 2 4 0.25 1.1


    OCR Scan     		PDF IRFP441 IRF442 O-204AA IRF443 IRF840 O-220 IRF841 IRFP151 2N6763 2N6764 IRF150 IRF842 IRF843

    IRF140

    Abstract: IRF141 IRF143 IRF142 to204ae IRF140 HARRIS IRF140 ir
    Text: IRF140, IRF141, IRF142, IRF143 h a r r is SEM C0NDUCT0R 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Juiy 1998 Features Description • 28A and 25A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF 077i2 IRF140, IRF141, IRF142, IRF143 IRF140 IRF141 IRF143 IRF142 to204ae IRF140 HARRIS IRF140 ir

    Untitled

    Abstract: No abstract text available
    Text: yw us FRK160D, FRK160R, FRK160H 50A, 100V, 0.040 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 50A, 100V, RDS on = 0.040£i TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		PDF FRK160D, FRK160R, FRK160H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD O-204AE

    Untitled

    Abstract: No abstract text available
    Text: w vys S Semiconductor FRK264D, FRK264R, FRK264H y y 34A, 250V, 0.120 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 34A, 250V, RDS on = 0.120S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma


    OCR Scan     		PDF FRK264D, FRK264R, FRK264H 120S1 O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD O-204AE

    SMD H24

    Abstract: H24 SMD H-24
    Text: International I 8 R Rectifier Government and Space Products to Part R DS on B V0SS N u m b er T { = 25°C (A) (V) Pd T f =100°C Total D o se Rating Rads (Si) (A) @ T c — 25°C W Fax on D e m an d Case Outline N um ber Key Radiation Hardened HEXFET Power MOSFETs


    OCR Scan     		PDF O-204AE 1RH7150 1RH8250 90S79 O-254AA O-257AA O-204AA SMD H24 H24 SMD H-24

    Untitled

    Abstract: No abstract text available
    Text: y*Rg*s FRK260D, FRK260R, FRK260H 46A, 200V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 46A, 200V, RDS on = 0.070Q. TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		PDF FRK260D, FRK260R, FRK260H O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD O-204AE

    Untitled

    Abstract: No abstract text available
    Text: FRK9150D, FRK9150R, FRK9150H 26A, -100V, 0.125 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 26A, -100V, RDS on = 0.125S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		PDF FRK9150D, FRK9150R, FRK9150H -100V, 125S1 O-204AE 100KRAD 300KRAD 1000KRAD

    Untitled

    Abstract: No abstract text available
    Text: FRK150D, FRK150R, FRK150H 40A, 100V, 0.055 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 40A, 100V, RDS on = 0.055S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		PDF FRK150D, FRK150R, FRK150H 055S1 O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD O-204AE

    Untitled

    Abstract: No abstract text available
    Text: yw us FRK9260D, FRK9260R, FRK9260H 26A, -200V, 0.200 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 26A, -200V, RDS on = 0.200Q TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		PDF FRK9260D, FRK9260R, FRK9260H -200V, O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD

    Untitled

    Abstract: No abstract text available
    Text: FRK460D, FRK460R, FRK460H 17A, 500V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 17A, 500V, RDS on = 0.400S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		PDF FRK460D, FRK460R, FRK460H 400S1 O-204AE 100KRAD 300KRAD 1000KRAD 3000KRAD O-204AE