TO220 IC Search Results
TO220 IC Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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D1U74T-W-1600-12-HB4AC | Murata Manufacturing Co Ltd | AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs |
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D1U54T-M-2500-12-HB4C | Murata Manufacturing Co Ltd | 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR |
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MRMS591P | Murata Manufacturing Co Ltd | Magnetic Sensor |
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SCR410T-K03-PCB | Murata Manufacturing Co Ltd | 1-Axis Gyro Sensor on Evaluation Board |
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MRMS581P | Murata Manufacturing Co Ltd | Magnetic Sensor |
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TO220 IC Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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tea1761
Abstract: heat sink to220 Silicon controller rectifier TEA1750 package to220 PSMN1R6-30PL PSMN5R0-80PS PSMN2R0-30PL PSMN7R6-60PS PSMN3R0-60PS
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Contextual Info: PSMN7R8-120PS N-channel 120V 7.9 mΩ standard level MOSFET in TO220 Previously named PSMN8R0-120PS 30 November 2012 Preliminary data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product |
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PSMN7R8-120PS PSMN8R0-120PS) | |
PSMN013-100PSContextual Info: TO -22 0A B PSMN013-100PS N-channel 100V 13.9mΩ standard level MOSFET in TO220. Rev. 3 — 29 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is |
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PSMN013-100PS PSMN013-100PS | |
Contextual Info: TO -22 0A B PSMN027-100PS N-channel 100V 26.8 mΩ standard level MOSFET in TO220 Rev. 3 — 12 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is |
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PSMN027-100PS | |
Contextual Info: TO -22 0A B PSMN1R5-40PS N-channel 40 V 1.5 mΩ standard level MOSFET in TO220. Rev. 01 — 3 February 2011 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 SOT78 package qualified to 175 °C. This |
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PSMN1R5-40PS | |
TO220 package
Abstract: PSMN4R3-30PL PSMN trench PSMN012-80PS PSMN050-80PS PSMN1R6-30PL PSMN2R0-30PL PSMN2R2-40PS PSMN4R4-80PS
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Contextual Info: BDS20 BDS21 SEME LAB MECHANICAL DATA Dimensions in mm SILICON EPITAXIAL BASE COMPLEMENTARY DARLINGTON POWER TRANSISTORS IN TO220 PACKAGE 4.6 1 0.6 0.8 3.6 Dia. 1 0 .6 1 3 .5 16.5 BDS20SM BDS21SM 1 23 1 3 .7 0 FEATURES • HERMETIC TO220 METAL OR CERAMIC PACKAGES |
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BDS20 BDS21 BDS20SM BDS21SM O220M O220SM | |
175CContextual Info: TO -22 0A B PSMN4R3-80PS N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 Rev. 01 — 27 December 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is |
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PSMN4R3-80PS 175C | |
Contextual Info: TO -2 20A B PSMN1R5-40PS N-channel 40 V 1.6 mΩ standard level MOSFET in TO220 15 July 2013 Product data sheet 1. General description Standard level N-channel MOSFET in SOT78 TO220 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power |
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PSMN1R5-40PS | |
PSMN013-100PSContextual Info: PSMN013-100PS N-channel 100V 13.9mΩ standard level MOSFET in TO220. 10 August 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and |
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PSMN013-100PS PSMN013-100PS | |
Contextual Info: BDS13 BDS14 BDS15 SEME LAB MECHANICAL DATA Dimensions in mm SILICON PNP EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES 4.6 1 0.6 0.8 3.6 Dia. 1 0 .6 1 3 .5 16.5 BDS13SM BDS14SM BDS15SM 1 23 1 3 .7 0 FEATURES • HERMETIC TO220 METAL OR CERAMIC |
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BDS13 BDS14 BDS15 BDS13SM BDS14SM BDS15SM O220M O220SM | |
Contextual Info: TO -22 0A B PSMN017-80PS N-channel 80 V 17 mΩ standard level MOSFET in TO220 Rev. 3 — 27 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is |
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PSMN017-80PS dissipati12 | |
D566Contextual Info: PSMN7R0-100PS N-channel 100V 6.8 mΩ standard level MOSFET in TO220. 30 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and |
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PSMN7R0-100PS D566 | |
Contextual Info: TO -2 20A B PSMN7R8-120PS N-channel 120V 7.9mΩ standard level MOSFET in TO220 25 January 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and power |
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PSMN7R8-120PS 25gal | |
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Contextual Info: TO -2 20A B PSMN7R0-100PS N-channel 100V 6.8 mΩ standard level MOSFET in TO220. 17 October 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and |
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PSMN7R0-100PS | |
Contextual Info: BDS18 BDS18SMD BDS19 BDS19SMD MECHANICAL DATA Dimensions in mm SILICON PNP EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES 4.6 1 0.6 3.6 Dia. 1 0 .6 1 3 .5 16.5 0.8 1 23 1 3 .7 0 FEATURES • HERMETIC TO220 METAL OR CERAMIC PACKAGES 1.0 2 .5 4 |
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BDS18 BDS18SMD BDS19 BDS19SMD O220M | |
6 pin power switching ic to220Contextual Info: BDS10 BDS11 BDS12 SEME LAB MECHANICAL DATA Dimensions in mm SILICON NPN EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES 4.6 1 0.6 0.8 3.6 Dia. 1 0 .6 1 3 .5 16.5 BDS10SM BDS11SM BDS12SM 1 23 1 3 .7 0 FEATURES • HERMETIC TO220 METAL OR CERAMIC |
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BDS10 BDS11 BDS12 BDS10SM BDS11SM BDS12SM O220M O220SM 6 pin power switching ic to220 | |
PSMN2R8-40PSContextual Info: TO -2 20A B PSMN2R8-40PS N-channel TO220 40 V 2.8 mΩ standard level MOSFET 11 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and |
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PSMN2R8-40PS PSMN2R8-40PS | |
Contextual Info: PSMN8R5-100PS N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 29 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and |
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PSMN8R5-100PS | |
Contextual Info: TO -2 20A B PSMN4R8-100PSE N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package 11 July 2014 Product data sheet 1. General description Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of NXP's "NextPower Live" portfolio, the PSMN4R8-100PSE is robust enough to withstand |
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PSMN4R8-100PSE PSMN4R8-100PSE | |
Contextual Info: TO -2 20A B PSMN8R5-100PS N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 17 October 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and |
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PSMN8R5-100PS | |
TO220 HEATSINK DATASHEET
Abstract: PSMN2R8-40PS
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PSMN2R8-40PS TO220 HEATSINK DATASHEET PSMN2R8-40PS | |
Contextual Info: PSMN017-80PS N-channel 80 V 17 mΩ standard level MOSFET in TO220 Rev. 02 — 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic |
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PSMN017-80PS | |
Contextual Info: TO -2 20A B PSMN7R8-100PSE N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package 11 August 2014 Product data sheet 1. General description Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of NXP's "NextPower Live" portfolio, the PSMN7R8-100PSE is robust enough to withstand |
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PSMN7R8-100PSE PSMN7R8-100PSE |