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    TO220 IC Search Results

    TO220 IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D1U74T-W-1600-12-HB4AC
    Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C
    Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    MRMS591P
    Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd
    SCR410T-K03-PCB
    Murata Manufacturing Co Ltd 1-Axis Gyro Sensor on Evaluation Board Visit Murata Manufacturing Co Ltd
    MRMS581P
    Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd

    TO220 IC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    tea1761

    Abstract: heat sink to220 Silicon controller rectifier TEA1750 package to220 PSMN1R6-30PL PSMN5R0-80PS PSMN2R0-30PL PSMN7R6-60PS PSMN3R0-60PS
    Contextual Info: New high-performance Trench 6 MOSFETs in a TO220 package for power management applications Giving you more choice with an extended portfolio of Trench 6 MOSFETs in TO220 We’ve extended our range of Trench 6 MOSFETs with new devices in the industry-standard TO220


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    PDF

    Contextual Info: PSMN7R8-120PS N-channel 120V 7.9 mΩ standard level MOSFET in TO220 Previously named PSMN8R0-120PS 30 November 2012 Preliminary data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product


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    PSMN7R8-120PS PSMN8R0-120PS) PDF

    PSMN013-100PS

    Contextual Info: TO -22 0A B PSMN013-100PS N-channel 100V 13.9mΩ standard level MOSFET in TO220. Rev. 3 — 29 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is


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    PSMN013-100PS PSMN013-100PS PDF

    Contextual Info: TO -22 0A B PSMN027-100PS N-channel 100V 26.8 mΩ standard level MOSFET in TO220 Rev. 3 — 12 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is


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    PSMN027-100PS PDF

    Contextual Info: TO -22 0A B PSMN1R5-40PS N-channel 40 V 1.5 mΩ standard level MOSFET in TO220. Rev. 01 — 3 February 2011 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 SOT78 package qualified to 175 °C. This


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    PSMN1R5-40PS PDF

    TO220 package

    Abstract: PSMN4R3-30PL PSMN trench PSMN012-80PS PSMN050-80PS PSMN1R6-30PL PSMN2R0-30PL PSMN2R2-40PS PSMN4R4-80PS
    Contextual Info: Ten new high-performance Trench 6 MOSFETs in a TO220 package for power supply and motion control Giving you more choice with an extended portfolio of Trench 6 MOSFETs in TO220 We’ve extended our range of Trench 6 MOSFETs with ten new devices in the industry-standard


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    Contextual Info: BDS20 BDS21 SEME LAB MECHANICAL DATA Dimensions in mm SILICON EPITAXIAL BASE COMPLEMENTARY DARLINGTON POWER TRANSISTORS IN TO220 PACKAGE 4.6 1 0.6 0.8 3.6 Dia. 1 0 .6 1 3 .5 16.5 BDS20SM BDS21SM 1 23 1 3 .7 0 FEATURES • HERMETIC TO220 METAL OR CERAMIC PACKAGES


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    BDS20 BDS21 BDS20SM BDS21SM O220M O220SM PDF

    175C

    Contextual Info: TO -22 0A B PSMN4R3-80PS N-channel 80 V, 4.3 mΩ standard level MOSFET in TO220 Rev. 01 — 27 December 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is


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    PSMN4R3-80PS 175C PDF

    Contextual Info: TO -2 20A B PSMN1R5-40PS N-channel 40 V 1.6 mΩ standard level MOSFET in TO220 15 July 2013 Product data sheet 1. General description Standard level N-channel MOSFET in SOT78 TO220 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power


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    PSMN1R5-40PS PDF

    PSMN013-100PS

    Contextual Info: PSMN013-100PS N-channel 100V 13.9mΩ standard level MOSFET in TO220. 10 August 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and


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    PSMN013-100PS PSMN013-100PS PDF

    Contextual Info: BDS13 BDS14 BDS15 SEME LAB MECHANICAL DATA Dimensions in mm SILICON PNP EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES 4.6 1 0.6 0.8 3.6 Dia. 1 0 .6 1 3 .5 16.5 BDS13SM BDS14SM BDS15SM 1 23 1 3 .7 0 FEATURES • HERMETIC TO220 METAL OR CERAMIC


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    BDS13 BDS14 BDS15 BDS13SM BDS14SM BDS15SM O220M O220SM PDF

    Contextual Info: TO -22 0A B PSMN017-80PS N-channel 80 V 17 mΩ standard level MOSFET in TO220 Rev. 3 — 27 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is


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    PSMN017-80PS dissipati12 PDF

    D566

    Contextual Info: PSMN7R0-100PS N-channel 100V 6.8 mΩ standard level MOSFET in TO220. 30 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and


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    PSMN7R0-100PS D566 PDF

    Contextual Info: TO -2 20A B PSMN7R8-120PS N-channel 120V 7.9mΩ standard level MOSFET in TO220 25 January 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and power


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    PSMN7R8-120PS 25gal PDF

    Contextual Info: TO -2 20A B PSMN7R0-100PS N-channel 100V 6.8 mΩ standard level MOSFET in TO220. 17 October 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and


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    PSMN7R0-100PS PDF

    Contextual Info: BDS18 BDS18SMD BDS19 BDS19SMD MECHANICAL DATA Dimensions in mm SILICON PNP EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES 4.6 1 0.6 3.6 Dia. 1 0 .6 1 3 .5 16.5 0.8 1 23 1 3 .7 0 FEATURES • HERMETIC TO220 METAL OR CERAMIC PACKAGES 1.0 2 .5 4


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    BDS18 BDS18SMD BDS19 BDS19SMD O220M PDF

    6 pin power switching ic to220

    Contextual Info: BDS10 BDS11 BDS12 SEME LAB MECHANICAL DATA Dimensions in mm SILICON NPN EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES 4.6 1 0.6 0.8 3.6 Dia. 1 0 .6 1 3 .5 16.5 BDS10SM BDS11SM BDS12SM 1 23 1 3 .7 0 FEATURES • HERMETIC TO220 METAL OR CERAMIC


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    BDS10 BDS11 BDS12 BDS10SM BDS11SM BDS12SM O220M O220SM 6 pin power switching ic to220 PDF

    PSMN2R8-40PS

    Contextual Info: TO -2 20A B PSMN2R8-40PS N-channel TO220 40 V 2.8 mΩ standard level MOSFET 11 February 2013 Product data sheet 1. General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and


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    PSMN2R8-40PS PSMN2R8-40PS PDF

    Contextual Info: PSMN8R5-100PS N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 29 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and


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    PSMN8R5-100PS PDF

    Contextual Info: TO -2 20A B PSMN4R8-100PSE N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package 11 July 2014 Product data sheet 1. General description Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of NXP's "NextPower Live" portfolio, the PSMN4R8-100PSE is robust enough to withstand


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    PSMN4R8-100PSE PSMN4R8-100PSE PDF

    Contextual Info: TO -2 20A B PSMN8R5-100PS N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 17 October 2013 Product data sheet 1. General description Standard level N-channel MOSFET in a TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and


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    PSMN8R5-100PS PDF

    TO220 HEATSINK DATASHEET

    Abstract: PSMN2R8-40PS
    Contextual Info: PSMN2R8-40PS N-channel TO220 40 V 2.8 mΩ standard level MOSFET Rev. 01 — 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic


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    PSMN2R8-40PS TO220 HEATSINK DATASHEET PSMN2R8-40PS PDF

    Contextual Info: PSMN017-80PS N-channel 80 V 17 mΩ standard level MOSFET in TO220 Rev. 02 — 1 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic


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    PSMN017-80PS PDF

    Contextual Info: TO -2 20A B PSMN7R8-100PSE N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in TO220 package 11 August 2014 Product data sheet 1. General description Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of NXP's "NextPower Live" portfolio, the PSMN7R8-100PSE is robust enough to withstand


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    PSMN7R8-100PSE PSMN7R8-100PSE PDF