MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2SK3043
Abstract: No abstract text available
Text: Power F-MOS FETs 2SK3043 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 100mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2 13.7±0.2
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2SK3043
100mJ
O-220D
2SK3043
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2SK3045
Abstract: DSA003714
Text: Power F-MOS FETs 2SK3045 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15.6mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 35ns ● No secondary breakdown unit: mm 3.0±0.5 φ3.2±0.1 1.4±0.2
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2SK3045
O-220D
2SK3045
DSA003714
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IGBT 2pg011
Abstract: 2PG011
Text: This product complies with the RoHS Directive EU 2002/95/EC . IGBT 2PG011 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits • Package Low collector-emitter saturation voltage: VCE(sat) < 2.5 V High-speed switching: tf = 185 ns (typ.)
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2002/95/EC)
2PG011
O-220D-A1
IGBT 2pg011
2PG011
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA2DF31 Silicon mesa type For high frequency rectification • Package Super high speed switching characteristic: trr = 20 ns (typ.) Low noise type Code
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2002/95/EC)
MA2DF31
O-220D-B1
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SC4898
Abstract: No abstract text available
Text: Power Transistors 2SC4898 Silicon NPN triple diffusion planar type Unit: mm For high breakdown voltage high-speed switching 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Symbol Rating Collector to base voltage VCBO 1 000 V Collector to emitter voltage
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2SC4898
2SC4898
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marking code 62z
Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX
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HVD141/142
HZU16
HZU10
HZU18
HZU11
HZU20
HZU12
HZU22
HZU13
HZU24
marking code 62z
philips surface mount zener diode v6
marking 68m sot 23-5
1S2473 equivalent
DIODE ROHM 3pin Marking A7
IPS302
marking 62z SOT23
diode S4 68a
1ss81 diode equivalent
1S2473 DIODE equivalent
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3D752 (MA7D52), MA3D752A (MA7D52A) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 15.0±0.5
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MA3D752
MA7D52)
MA3D752A
MA7D52A)
O-220D-A1
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3D650 (MA6D50) Silicon planar type (cathode common) Unit: mm For high-frequency rectification 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 M Di ain sc te on na tin nc ue e/
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MA3D650
MA6D50)
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Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3D756 (MA7D56) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 15.0±0.5 • Features
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MA3D756
MA7D56)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5505 Silicon NPN epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features 15.0±0.5 φ 3.2±0.1 ■ Absolute Maximum Ratings TC = 25°C
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2002/95/EC)
2SC5505
O-220D
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3D798 (MA10798) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 13.7±0.2
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MA3D798
MA10798)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3D755 (MA7D55) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features φ 3.2±0.1
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MA3D755
MA7D55)
125nteed
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3046 Silicon N-channel power MOSFET Unit: mm • Features 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Avalanche energy capability guaranteed: EAS > 130 mJ • Gate-source surrender voltage VGSS : ±30 V guaranteed
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2SK3046
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3D761 (MA7D61) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 15.0±0.5 • Features 13.7±0.2 4.2±0.2 Solder Dip • Low forward voltage VF
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MA3D761
MA7D61)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3D799 (MA10799) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 13.7±0.2
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MA3D799
MA10799)
125nteed
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2sd2693
Abstract: No abstract text available
Text: Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage
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2SD2693,
2SD2693A
2SB1724,
2SB1724A
2SD2693
2SD2693A
60ndant
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m MA643
Abstract: MA689 ir d10 ir d10-D10 ma752 MA7D50 MA7D61 MA555 MA649 MA652
Text: Diodes, Triggers • Schottky Barrier Diodes SBD (For Power) Main Characteristics (Ta = 2 5 "C) Type No. Category A A A Vr I f(AV) (V) (A) Main Characteristics (Ta =2 5 °C) Package Category Ir ter * Vf max.(V) typ.(ns) ■ Fast Recovery Diodes (FRD) No.
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MA749/A
T0-220
MA7D49/A
O-220D
MA750/A
MA7D50/A
MA752/A
m MA643
MA689
ir d10
ir d10-D10
ma752
MA7D50
MA7D61
MA555
MA649
MA652
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2SB1632
Abstract: 2sc3211 2sc3795 2sc3743 2SC2841 2SC3171 2SC3210 2SC3403 2SC3527 2SC3528
Text: Transistors Selection Guide by Applications and Functions • Switching Power Transistors Appli V cbo cation (V) VcEO (V ) Io (A) VcE (sat) (V) lc Ib tf (/JS) (A) (mA) 150/200/ 80 5 <1.6 5 IW 1 250 330 200 7 < 1 5 500 0.75 500 400 2 1 <1 200 1 Package (No.)
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r0-220
-220F
O-220E
O-220D
2sd1274Ã
2sd1680*
2sc4986
2SC3403
2SC3825
2SC2841
2SB1632
2sc3211
2sc3795
2sc3743
2SC2841
2SC3171
2SC3210
2SC3527
2SC3528
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Untitled
Abstract: No abstract text available
Text: ¿ ^ S E M | J T E C H COMBINATION SWITCHING CONTROLLER AND LOW DROPOUT REGULATOR April 8, 1998 SC113X TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1131/2/3/4 incorporates a high current low dropout linear regulator section together with a
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SC113X
TEL805-498-2111
SC1131/2/3/4
SC113X
O-220
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X9116WM8I-2.7T1
Abstract: No abstract text available
Text: Transistors Selection Guide by Applications and Functions •Switching Power Transistors Appli V cbo VcEO Io VcE (sat) cation (V) (V) (A) (V) 150/200/ 250 80 5 <1.6 Package (No.) lc tf (/JS) Ib MT3 (D43) (A) (mA) 5 IW MT4 (D46) TO TO-220E TO-220D N Type
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-220F
O-220E
O-220D
Z74/MB
2SC3210
2SC3171
2SC3527
2SC3285
2SC3506
2SC5156
X9116WM8I-2.7T1
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Untitled
Abstract: No abstract text available
Text: Panasonic S chottky B arrier D iodes SBD MA2D760A Silicon epitaxial planer type Unit : mm For switching power supply I Features T O -220D p ack ag e I f (AV)= 5 A rectification p o ssib le V r = 100V guaranteed S in g le type Absolute Maximum Ratings (Ta=25°C)
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MA2D760A
-220D
O-220D
C7031
150kHz
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