TO220F Search Results

PSMN4

Contextual Info: TO -2 20F PSMN4R6-100XS N-channel 100V 4.6 mΩ standard level MOSFET in TO220F SOT186A Rev. 1 — 3 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial,

Contextual Info: PACKAGE DIMENSIONS TO220F 4Pin Straight Type 10.0±0.3 4.5±0.3 6.5±0.3 2.8±0.3 2.8±0.3 2.4 25.0M IN 9.5±0.3 Ø3.2±0.1 2.55±0.3 0.9 10.7±0.3 1.5 0.65±0.1 1 2 3 2.54 2.54 2.54 4 0.5±0.1 UNIT : mm Ver.2003-08-29

Contextual Info: KA5M0280R S P S P S TO220F-4L The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under

Contextual Info: パッケージ外形図 TO220F 3Pin 2.8±0.3 4.7±0.3 2.8±0.3 6.5±0.3 10.1±0.3 4.8±0.3 9.5±0.3 Ø 3.2±0.1 1.3 2.55±0.3 12.5M IN 1.7 +0.12 0.65 -0.10 2.54 2.54 +0.15 0.7 -0.10 単位 : mm

SI-3002KWF

Abstract: SI-3003KWF
Contextual Info: 1-1-3 Multi-Output Type Regulator ICs SI-3000KWF Series 2-Output, Low Dropout Voltage Linear Regulator ICs •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220F (Ta=25°C) Ratings Parameter DC Input Voltage • Output current: 1.0A x 2

Contextual Info: BUJD203AX NPN power transistor with integrated diode Rev. 01 — 27 September 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT186A TO220F full pack plastic package.

P9NB60

Abstract: P9NB60FP
Contextual Info: STP9NB60 STP9NB60FP  N - CHANNEL 600V - 0.7Ω - 9A TO-220/TO220FP PowerMESH MOSFET TYPE ST P9NB60 ST P9NB60FP • ■ ■ ■ ■ V DSS R DS on ID 600 V 600 V < 0.8 Ω < 0.8 Ω 9.0 A 9.0 A TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY

AOTF409

Abstract: AOTF409L
Contextual Info: AOTF409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOTF409/L uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the TO220FL package, this device is well suited for high

Contextual Info: TO -2 20F PSMN5R6-100XS N-channel 100V 5.6 mΩ standard level MOSFET in TO220F SOT186A Rev. 2 — 26 September 2011 Preliminary data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C.

c05 10 48 diode

Abstract: FME-230A
Contextual Info: 100V, 30A Schottky barrier diode in TO220F package FME-230A •Absolute maximum ratings Parameter Ratings Unit ■Electrical characteristics Conditions Parameter Ratings Unit Ta = 25°C Conditions VRM 100 V VF 0.85 V IF =15A IF(AV) 30 A IR 1.5max mA VR =VRM

Mosfet

Abstract: SSF2N60F mosfet 600V 100A
Contextual Info: SSF2N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 3.6ohm(typ.) ID 2A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and

Mosfet

Abstract: SSF10N60F
Contextual Info: SSF10N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.8ohm(typ.) ID 10A TO220F Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced trench MOSFET process technology Special designed for PWM, load switching and

Mosfet

Abstract: SSF11NS65F
Contextual Info: SSF11NS65F 650V N-Channel MOSFET Main Product Characteristics VDSS 650V RDS on 0.36ohm(typ.) ID 11A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge

Mosfet

Abstract: SSF13N50F
Contextual Info: SSF13N50F 500V N-Channel MOSFET Main Product Characteristics VDSS 500V RDS on 0.41Ω(typ.) ID 13A TO220F Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced Process Technology Special designed for PWM, load switching and general purpose applications

FME-210B

Abstract: sanken CF35 Sanken catalog
Contextual Info: Schottky Barrier Diode FME-210B April. 2007 •General Description ■Package-TO220F FME-210B is a High Voltage 150V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ●DC-DC converters

sanken lot number

Abstract: B105 CF35 FMXJ-2164S low forward voltage fast diode
Contextual Info: Ultra-Fast-Recovery Rectifier Diode FMXJ-2164S September, 2005 •Package-TO220F ■General Description FMXJ-2164S employs JBS structure*, i.e. the combined structure of SBD and FRD. In addition, together with our proprietary lifetime control technology, Ultra fast recovery, Low loss and

FMXA-2153S

Abstract: 2153S sanken lot number B105 CF35 SANKEN power supply Sanken marking
Contextual Info: Ultrafast Recovery Diode FMXA-2153S •General Description November, 2005 ■Package-TO220F Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a high frequency rectifier FRD for FCC power supply, etc.

FMXA-1106S

Abstract: XA1106 Diode XA1106 FMX-G26S sanken lot number B105 CF35 SANKEN power supply SANKEN smps
Contextual Info: Ultrafast Recovery Diode FMXA-1106S •General Description November, 2005 ■Package-TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode

sanken power transistor

Abstract: CF35 FMEN-220A sanken DSA0016518 Sanken catalog "Sanken Rectifiers"
Contextual Info: Schottky Barrier Diode FMEN-220A March, 2006 •General Description ■Package-TO220F FMEN-220A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications ● DC-DC converters

fmw-2206

Abstract: w 2206 schottky T T 2206 3pin -10-DC- IR sanken power transistor 615t
Contextual Info: http://www.sanken-ele.co.jp SANKEN ELECTRIC FMW-2206 Mar. 2008 Schottky Barrier Rectifier General Description Package FMW-2206 is a Schottky Barrier Diode, and has achieved low TO220F 3Pin leakage current and low VF by selecting the best barrier metal. Applications

TRANSISTOR 15n60c3

Contextual Info: SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.28 Ω ID 15 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated

SI-8050RF

Abstract: 8050rf SI 8050RF sanken tv 8050R TRANSISTOR sanken catalog SANKEN SI-1050S2 rk46 "Sanken Rectifiers"
Contextual Info: DC/DC Step-Down Buck Converter IC SI-8050RF December 2005 •General Descriptions ■Package-TO220F-5 SI-8000RF series has protection circuits for overcurrent and overheating, and the functions required for switching regulators. Only four discrete components are required and it

Contextual Info: NTE2679 Silicon NPN Transistor Power, High Voltage w/Built−In Damper Diode TO220F Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D Wide Area of Safe Operation D Built−In Damper Diode Applications: D Horizontal Deflection Output for TV or CRT Monitor

11n60c3

Abstract: transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 E8185
Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220